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Class Information
Number: 257/E31.065
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Semiconductor devices responsive or sensitive to electromagnetic radiation (e.g., infrared radiation, adapted for conversion of radiation into electrical energy or for control of electrical energy by such radiation processes, or apparatus peculiar to manufacture or treatment of such devices, or of parts thereof) (epo) > Adapted to control current flow through device (e.g., photoresistor) (epo) > For device having potential or surface barrier (e.g., phototransistor) (epo) > Device sensitive to infrared, visible, or ultraviolet radiation (epo) > Characterized by only one potential or surface barrier (epo) > Schottky potential barrier (epo)
Description: This subclass is indented under subclass E31.055. This subclass is substantially the same in scope as ECLA classification H01L31/108.

Sub-classes under this class:

Class Number Class Name Patents
257/E31.066 Metal-semiconductor-metal (msm) schottky barrier (epo) 48

Patents under this class:
1 2 3

Patent Number Title Of Patent Date Issued
4823178 Photosensor suited for image sensor Apr. 18, 1989
4811069 Photoelectric conversion device Mar. 7, 1989
4743083 Cylindrical diffraction grating couplers and distributed feedback resonators for guided wave devices May. 10, 1988
4742017 Implantation method for forming Schottky barrier photodiodes May. 3, 1988
4719501 Semiconductor device having junction formed from two different hydrogenated polycrystalline silicon layers Jan. 12, 1988
4703996 Integrated optical device having integral photodetector Nov. 3, 1987
4687537 Epitaxial metal silicide layers Aug. 18, 1987
4638345 IR imaging array and method of making same Jan. 20, 1987
4618024 Moving seismic source system for use in water-covered areas Oct. 21, 1986
4617532 Optically stabilized semiconductor microwave diodes Oct. 14, 1986
4614961 Tunable cut-off UV detector based on the aluminum gallium nitride material system Sep. 30, 1986
H134 Buried junction enhanced Schottky barrier device Sep. 2, 1986
4589189 Method for producing a Schottky barrier light detecting device May. 20, 1986
4586069 Opto-electrical device made of silicon for detecting infrared light Apr. 29, 1986
4548671 Method of making a charge-coupled device imager which includes an array of Schottky-barrier detectors Oct. 22, 1985
4544939 Schottky-barrier diode radiant energy detector with extended longer wavelength response Oct. 1, 1985
4543442 GaAs Schottky barrier photo-responsive device and method of fabrication Sep. 24, 1985
4533933 Schottky barrier infrared detector and process Aug. 6, 1985
4524374 Device for detecting infrared rays Jun. 18, 1985
4517733 Process for fabricating thin film image pick-up element May. 21, 1985
4496964 MOSFET Light detecting device having a Schottky junction Jan. 29, 1985
4488038 Phototransistor for long wavelength radiation Dec. 11, 1984
4482906 Gallium aluminum arsenide integrated circuit structure using germanium Nov. 13, 1984
4471371 Thin film image pickup element Sep. 11, 1984
4442446 Sensitized epitaxial infrared detector Apr. 10, 1984
4406050 Method for fabricating lead halide sensitized infrared photodiodes Sep. 27, 1983
4403397 Method of making avalanche photodiodes Sep. 13, 1983
4355456 Process of fabricating a Schottky barrier photovoltaic detector Oct. 26, 1982
4341954 Photo-electric converting apparatus Jul. 27, 1982
4319258 Schottky barrier photovoltaic detector Mar. 9, 1982
4287527 Opto-electronic devices based on bulk crystals of complex semiconductors Sep. 1, 1981
4201604 Process for making a negative resistance diode utilizing spike doping May. 6, 1980
4148050 Radiation dose rate hardened light detector Apr. 3, 1979
4137543 Light detector arrangement Jan. 30, 1979
4072544 Growth of III-V layers containing arsenic, antimony and phosphorus Feb. 7, 1978
4034396 Light sensor having good sensitivity to visible light Jul. 5, 1977
4032951 Growth of III-V layers containing arsenic, antimony and phosphorus, and device uses Jun. 28, 1977
4021833 Infrared photodiode May. 3, 1977
3993800 Mounting technique for thin film Schottky barrier photodiodes Nov. 23, 1976
3980915 Metal-semiconductor diode infrared detector having semi-transparent electrode Sep. 14, 1976
3971057 Lateral photodetector of improved sensitivity Jul. 20, 1976
3969743 Protective coating for IV-VI compound semiconductor devices Jul. 13, 1976
3961998 Vacuum deposition method for fabricating an epitaxial PbSnTe rectifying metal semiconductor contact photodetector Jun. 8, 1976
3945110 Method of making an integrated optical detector Mar. 23, 1976

1 2 3

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