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Class Information
Number: 257/E31.065
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Semiconductor devices responsive or sensitive to electromagnetic radiation (e.g., infrared radiation, adapted for conversion of radiation into electrical energy or for control of electrical energy by such radiation processes, or apparatus peculiar to manufacture or treatment of such devices, or of parts thereof) (epo) > Adapted to control current flow through device (e.g., photoresistor) (epo) > For device having potential or surface barrier (e.g., phototransistor) (epo) > Device sensitive to infrared, visible, or ultraviolet radiation (epo) > Characterized by only one potential or surface barrier (epo) > Schottky potential barrier (epo)
Description: This subclass is indented under subclass E31.055. This subclass is substantially the same in scope as ECLA classification H01L31/108.










Sub-classes under this class:

Class Number Class Name Patents
257/E31.066 Metal-semiconductor-metal (msm) schottky barrier (epo) 48


Patents under this class:
1 2 3

Patent Number Title Of Patent Date Issued
5648297 Long-wavelength PTSI infrared detectors and method of fabrication thereof Jul. 15, 1997
5639673 Transparent ohmic contacts for Schottky diode optical detectors on thin and inverted epitaxial layers Jun. 17, 1997
5631489 Optoelectronic device May. 20, 1997
5608230 Strained superlattice semiconductor photodetector having a side contact structure Mar. 4, 1997
5598016 Back-illuminated type photoelectric conversion device Jan. 28, 1997
5589688 Infrared radiation sensor Dec. 31, 1996
5576559 Heterojunction electron transfer device Nov. 19, 1996
5572043 Schottky junction device having a Schottky junction of a semiconductor and a metal Nov. 5, 1996
5565676 Method of driving photoelectric conversion device Oct. 15, 1996
5488231 Metal/semiconductor junction Schottky diode optical device using a distortion grown layer Jan. 30, 1996
5478757 Method for manufacturing photodetector using a porous layer Dec. 26, 1995
5449924 Photodiode having a Schottky barrier formed on the lower metallic electrode Sep. 12, 1995
5432374 Integrated IR and mm-wave detector Jul. 11, 1995
5308969 Image sensor May. 3, 1994
5291036 Amorphous silicon sensor Mar. 1, 1994
5285098 Structure and method internal photoemission detection Feb. 8, 1994
5163179 Platinum silicide infrared diode Nov. 10, 1992
5140381 Optical detection device with variable detection threshold Aug. 18, 1992
5120960 Infrared image detecting device and method Jun. 9, 1992
5101254 Schottky barrier semiconductor photodetector including graded energy band gap layer Mar. 31, 1992
5083171 Image sensor Jan. 21, 1992
5055810 Ultra-high speed light activated microwave switch/modulation using photoreactive effect Oct. 8, 1991
5055901 Multi-layer metal silicide infrared detector Oct. 8, 1991
5047622 Long wavelength infrared detector with heterojunction Sep. 10, 1991
5029240 Electronically tuneable fiber-optic receiver for narrow band microwave signal reception Jul. 2, 1991
5015592 Method of fabricating a multi-layer metal silicide infrared detector May. 14, 1991
5012083 Long wavelength infrared detector with heterojunction Apr. 30, 1991
5010018 Method for forming Schottky photodiodes Apr. 23, 1991
5001530 Infrared Schottky junction charge coupled device Mar. 19, 1991
4999694 Photodiode Mar. 12, 1991
4990988 Laterally stacked Schottky diodes for infrared sensor applications Feb. 5, 1991
4982246 Schottky photodiode with silicide layer Jan. 1, 1991
4971447 Method for measuring concentration of chemical substances Nov. 20, 1990
4965212 Optical sensor Oct. 23, 1990
4962303 Infrared image detector utilizing Schottky barrier junctions Oct. 9, 1990
4939561 Infrared sensor Jul. 3, 1990
4924297 Semiconductor device package structure May. 8, 1990
4910570 Photo-detector for ultraviolet and process for its production Mar. 20, 1990
4908686 Stacked silicide/silicon mid- to long-wavelength infrared detector Mar. 13, 1990
4900373 Sensitization pretreatment of Pb-salt epitaxial films for schottky diodes by sulfur vapor exposure Feb. 13, 1990
4897844 Information transmission by mode modulation and laser oscillators thereof Jan. 30, 1990
4876586 Grooved Schottky barrier photodiode for infrared sensing Oct. 24, 1989
4875082 Schottky barrier photodiode structure Oct. 17, 1989
4870027 Sensitization pretreatment of Pb-salt epitaxial films for Schottky diodes by sulfur vapor exposure Sep. 26, 1989
4866499 Photosensitive diode element and array Sep. 12, 1989
4864378 Schottky barrier infrared detector Sep. 5, 1989
4857973 Silicon waveguide with monolithically integrated Schottky barrier photodetector Aug. 15, 1989
4853339 Method of sensitizing Pb-salt epitaxial films for schottky diodes Aug. 1, 1989
4829353 Photoelectric converting device May. 9, 1989
4829173 Radiation detecting apparatus May. 9, 1989

1 2 3










 
 
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