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Class Information
Number: 257/E31.064
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Semiconductor devices responsive or sensitive to electromagnetic radiation (e.g., infrared radiation, adapted for conversion of radiation into electrical energy or for control of electrical energy by such radiation processes, or apparatus peculiar to manufacture or treatment of such devices, or of parts thereof) (epo) > Adapted to control current flow through device (e.g., photoresistor) (epo) > For device having potential or surface barrier (e.g., phototransistor) (epo) > Device sensitive to infrared, visible, or ultraviolet radiation (epo) > Characterized by only one potential or surface barrier (epo) > Potential barrier working in avalanche mode (e.g., avalanche photodiode) (epo) > Heterostructure (e.g., surface absorption or multiplication (sam) layer) (epo)
Description: This subclass is indented under subclass E31.063. This subclass is substantially the same in scope as ECLA classification H01L31/107B.










Patents under this class:
1 2 3

Patent Number Title Of Patent Date Issued
8710547 Avalanche photo diode and method of manufacturing the same Apr. 29, 2014
8637875 Single photon IR detectors and their integration with silicon detectors Jan. 28, 2014
8299504 Image sensing device and method of Oct. 30, 2012
7964878 Light emitting polymer devices using self-assembled monolayer structures Jun. 21, 2011
7902570 Apparatus comprising a single photon photodetector having reduced afterpulsing and method therefor Mar. 8, 2011
7880196 Image sensor and method for manufacturing the same Feb. 1, 2011
7875906 Photodetector and production method thereof Jan. 25, 2011
7851823 Semiconductor photodetector device Dec. 14, 2010
7834379 Avalanche photodiode with edge breakdown suppression Nov. 16, 2010
7719029 Negative feedback avalanche diode May. 18, 2010
7629195 Method of making light emitting diodes (LEDs) with improved light extraction by roughening Dec. 8, 2009
7626193 Apparatus comprising a single photon photodetector having reduced afterpulsing and method therefor Dec. 1, 2009
7560751 Semiconductor photo-detecting element Jul. 14, 2009
7432537 Avalanche photodiode structure Oct. 7, 2008
7348608 Planar avalanche photodiode Mar. 25, 2008
7294896 Photodetector with charge-carrier reflector Nov. 13, 2007
7271405 Intersubband detector with avalanche multiplier region Sep. 18, 2007
7132677 Super bright light emitting diode of nanorod array structure having InGaN quantum well and method for manufacturing the same Nov. 7, 2006
6936868 Sequential mesa avalanche photodiode capable of realizing high sensitization and method of manufacturing the same Aug. 30, 2005
6924541 Semiconductor photodetection device Aug. 2, 2005
6858463 High speed semiconductor photodetector Feb. 22, 2005
6791124 Sequential mesa avalanche photodiode capable of realizing high sensitization and method of manufacturing the same Sep. 14, 2004
6693337 Semiconductor photodetection device Feb. 17, 2004
6635908 Burying type avalanche photodiode and fabrication method thereof Oct. 21, 2003
6583482 Hetero-interface avalance photodetector Jun. 24, 2003
6515315 Avalanche photodiode for high-speed applications Feb. 4, 2003
6495380 Epitaxially grown avalanche photodiode Dec. 17, 2002
6492239 Method for fabricating avalanche photodiode Dec. 10, 2002
6465803 Semiconductor hetero-interface photodetector Oct. 15, 2002
6459107 Photodetector having a mixed crystal layer of SiGeC Oct. 1, 2002
6437362 Avalanche photodiode Aug. 20, 2002
6417528 High speed semiconductor photodetector Jul. 9, 2002
6384462 Planar hetero-interface photodetector May. 7, 2002
6350998 Ultraspeed low-voltage drive avalanche multiplication type semiconductor photodetector Feb. 26, 2002
6187653 Method for attractive bonding of two crystalline substrates Feb. 13, 2001
6147391 Semiconductor hetero-interface photodetector Nov. 14, 2000
6074892 Semiconductor hetero-interface photodetector Jun. 13, 2000
6072201 Hole-injection type separate absorption and multiplication avalanche photodiode Jun. 6, 2000
5985689 Method of fabricating photoelectric conversion device having at least one step-back layer Nov. 16, 1999
5952683 Functional semiconductor element with avalanche multiplication Sep. 14, 1999
5912478 Avalanche photodiode Jun. 15, 1999
5880489 Semiconductor photodetector Mar. 9, 1999
5869851 Photoelectric conversion device with graded band gap and carrier concentration Feb. 9, 1999
5866936 Mesa-structure avalanche photodiode having a buried epitaxial junction Feb. 2, 1999
5847418 Semiconductor photo detector containing crystalline amplification layer Dec. 8, 1998
5843804 Method of making avalanche photodiodes with epitaxially-regrown guard rings Dec. 1, 1998
5767560 Photoelectric conversion device and method of driving the same Jun. 16, 1998
5723877 Photoelectric conversion apparatus Mar. 3, 1998
5686734 Thin film semiconductor device and photoelectric conversion device using the thin film semiconductor device Nov. 11, 1997
5656831 Semiconductor photo detector Aug. 12, 1997

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