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Class Information
Number: 257/E31.063
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Semiconductor devices responsive or sensitive to electromagnetic radiation (e.g., infrared radiation, adapted for conversion of radiation into electrical energy or for control of electrical energy by such radiation processes, or apparatus peculiar to manufacture or treatment of such devices, or of parts thereof) (epo) > Adapted to control current flow through device (e.g., photoresistor) (epo) > For device having potential or surface barrier (e.g., phototransistor) (epo) > Device sensitive to infrared, visible, or ultraviolet radiation (epo) > Characterized by only one potential or surface barrier (epo) > Potential barrier working in avalanche mode (e.g., avalanche photodiode) (epo)
Description: This subclass is indented under subclass E31.055. This subclass is substantially the same in scope as ECLA classification H01L31/107.
Sub-classes under this class:
Patents under this class:
| Patent Number |
Title Of Patent |
Date Issued |
| 7368750 |
Semiconductor light-receiving device |
May. 6, 2008 |
| 7348607 |
Planar avalanche photodiode |
Mar. 25, 2008 |
| 7348608 |
Planar avalanche photodiode |
Mar. 25, 2008 |
| 7268339 |
Large area semiconductor detector with internal gain |
Sep. 11, 2007 |
| 7145208 |
MOS transistor having a work-function-dominating layer |
Dec. 5, 2006 |
| 7045833 |
Avalanche photodiodes with an impact-ionization-engineered multiplication region |
May. 16, 2006 |
| 7020375 |
Waveguide light detecting element |
Mar. 28, 2006 |
| 7002156 |
Detection system including avalanche photodiode for use in harsh environments |
Feb. 21, 2006 |
| 6995444 |
Ultrasensitive photodetector with integrated pinhole for confocal microscopes |
Feb. 7, 2006 |
| 6943390 |
High-gain photodetector with separated PN junction and rare earth doped region and a method of forming the same |
Sep. 13, 2005 |
| 6894322 |
Back illuminated photodiodes |
May. 17, 2005 |
| 6861681 |
On-p-GaAs substrate Zn1-xMgxSySe1-y pin photodiode and on-p-GaAs substrate Zn1-xMgxSySe1-y avalanche photodiode |
Mar. 1, 2005 |
| 6858829 |
Avalanche photodiode array biasing device and avalanche photodiode structure |
Feb. 22, 2005 |
| 6858912 |
Photodetector circuit |
Feb. 22, 2005 |
| 6835984 |
ESD resistant device |
Dec. 28, 2004 |
| 6831265 |
Photodetector having improved photoresponsitivity over a broad wavelength region |
Dec. 14, 2004 |
| 6812960 |
Photoelectric transducer and solid-state image pickup device |
Nov. 2, 2004 |
| 6797581 |
Avalanche photodiode for photon counting applications and method thereof |
Sep. 28, 2004 |
| 6747296 |
Avalanche photodiode multiplication region and avalanche photodiode with low impact ionization rate ratio |
Jun. 8, 2004 |
| 6743657 |
Method for combined fabrication of indium gallium arsenide/indium phosphide avalanche photodiodes and P-I-N photodiodes |
Jun. 1, 2004 |
| 6724018 |
Zn1-xMgxSySe1-y pin-photodiode and Zn1-xMgxSySe1-y avalanche-photodiode |
Apr. 20, 2004 |
| 6720588 |
Avalanche photodiode for photon counting applications and method thereof |
Apr. 13, 2004 |
| 6683294 |
Avalanche photo-diodes |
Jan. 27, 2004 |
| 6664573 |
Avalanche photodiode |
Dec. 16, 2003 |
| 6614086 |
Avalanche photodetector |
Sep. 2, 2003 |
| 6555890 |
Method for combined fabrication of indium gallium arsenide/indium phosphide avalanche photodiodes and p-i-n photodiodes |
Apr. 29, 2003 |
| 6492704 |
Photodiodes with photoconductive gain enhancement |
Dec. 10, 2002 |
| 6489232 |
ESD resistant device |
Dec. 3, 2002 |
| 6392282 |
BiCMOS-integrated photodetecting semiconductor device having an avalanche photodiode |
May. 21, 2002 |
| 6376321 |
Method of making a pn-junction in a semiconductor element |
Apr. 23, 2002 |
| 6359322 |
Avalanche photodiode having edge breakdown suppression |
Mar. 19, 2002 |
| 6353238 |
Method of using a wide wavelength range high efficiency avalanche light detector with negative feedback |
Mar. 5, 2002 |
| 6326654 |
Hybrid ultraviolet detector |
Dec. 4, 2001 |
| 6229162 |
Planar-type avalanche photodiode |
May. 8, 2001 |
| 6222209 |
Wide wavelength range high efficiency avalanche light detector with negative feedback |
Apr. 24, 2001 |
| 6163039 |
Triangular-barrier optoelectronic switch |
Dec. 19, 2000 |
| 6136628 |
Method for fabricating photodetector |
Oct. 24, 2000 |
| 6104047 |
Avalanche photodiode with thin built-in depletion region |
Aug. 15, 2000 |
| 6015721 |
Method of manufacturing an avalanche photodiode |
Jan. 18, 2000 |
| 5880490 |
Semiconductor radiation detectors with intrinsic avalanche multiplication in self-limiting mode of operation |
Mar. 9, 1999 |
| 5844291 |
Wide wavelength range high efficiency avalanche light detector with negative feedback |
Dec. 1, 1998 |
| 5818322 |
Silicon photosensitive element |
Oct. 6, 1998 |
| 5763903 |
Avalanche photodiode for light detection |
Jun. 9, 1998 |
| 5757057 |
Large area avalanche photodiode array |
May. 26, 1998 |
| 5744849 |
Photoelectric converting device and image processing apparatus using the same |
Apr. 28, 1998 |
| 5744850 |
Photoelectric conversion semiconductor device |
Apr. 28, 1998 |
| 5719414 |
Photoelectric conversion semiconductor device with insulation film |
Feb. 17, 1998 |
| 5670383 |
Method for fabrication of deep-diffused avalanche photodiode |
Sep. 23, 1997 |
| 5656835 |
Solid state imager and its driving method |
Aug. 12, 1997 |
| 5596186 |
High sensitivity silicon avalanche photodiode |
Jan. 21, 1997 |
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