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Class Information
Number: 257/E31.062
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Semiconductor devices responsive or sensitive to electromagnetic radiation (e.g., infrared radiation, adapted for conversion of radiation into electrical energy or for control of electrical energy by such radiation processes, or apparatus peculiar to manufacture or treatment of such devices, or of parts thereof) (epo) > Adapted to control current flow through device (e.g., photoresistor) (epo) > For device having potential or surface barrier (e.g., phototransistor) (epo) > Device sensitive to infrared, visible, or ultraviolet radiation (epo) > Characterized by only one potential or surface barrier (epo) > Pin potential barrier (epo) > Device comprising group iv amorphous material (epo)
Description: This subclass is indented under subclass E31.061. This subclass is substantially the same in scope as ECLA classification H01L31/105B.

Patents under this class:
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Patent Number Title Of Patent Date Issued
8598673 Low-noise large-area photoreceivers with low capacitance photodiodes Dec. 3, 2013
8138499 Stacked photoelectric conversion device Mar. 20, 2012
7919344 Image sensor and method for manufacturing the same Apr. 5, 2011
7812380 Solid-state imaging device and manufacturing method of the same Oct. 12, 2010
7732886 Pin photodiode structure Jun. 8, 2010
7709920 Photodiode arrangement May. 4, 2010
7358579 Reducing the actuation voltage of microelectromechanical system switches Apr. 15, 2008
7339218 Semiconductor memory device and method of manufacturing the same Mar. 4, 2008
7323750 Bipolar transistor and semiconductor device using same Jan. 29, 2008
7217591 Method and process intermediate for electrostatic discharge protection in flat panel imaging detectors May. 15, 2007
7145172 Thin film transistor array substrate Dec. 5, 2006
7042015 Semi-transparent power monitor integrated with a light producing module May. 9, 2006
6794725 Amorphous silicon sensor with micro-spring interconnects for achieving high uniformity in integrated light-emitting sources Sep. 21, 2004
6775428 Device having a light transmission device Aug. 10, 2004
6503771 Semiconductor photoelectrically sensitive device Jan. 7, 2003
6430325 Device having a light transmission device Aug. 6, 2002
6300648 Continuous amorphous silicon layer sensors using sealed metal back contact Oct. 9, 2001
6271055 Process for manufacturing semiconductor element using non-monocrystalline semiconductor layers of first and second conductivity types and amorphous and microcrystalline I-type semiconductor la Aug. 7, 2001
6180529 Method of making an image sensor or LCD including switching pin diodes Jan. 30, 2001
6169284 System of infrared radiation detection based on sensors of amorphous silicon and its alloys Jan. 2, 2001
6054747 Integrated photoreceiver having metal-insulator-semiconductor switch Apr. 25, 2000
6016011 Method and apparatus for a dual-inlaid damascene contact to sensor Jan. 18, 2000
5998806 Three-color sensor with a pin or nip series of layers Dec. 7, 1999
5920091 Method of fabricating highly sensitive photo sensor and structure of the same Jul. 6, 1999
5873003 Sight line detector, display unit, view finder and unit and camera with the same display unit Feb. 16, 1999
5844292 Photosensitive structure hardened to hard electromagnetic radiation and its application to video cameras Dec. 1, 1998
5796153 Variable-response x-ray detection assemblies and methods of using same Aug. 18, 1998
5790255 Transparent light beam detectors Aug. 4, 1998
5739065 Method of fabricating a highly sensitive photo sensor Apr. 14, 1998
5714772 Method of manufacturing light converter with amorphous-silicon pin heterojunction diode Feb. 3, 1998
5682037 Thin film detector of ultraviolet radiation, with high spectral selectivity option Oct. 28, 1997
5604136 Method of manufacturing light converter with amorphous-silicon pin heterojunction diode Feb. 18, 1997
5587611 Coplanar X-ray photodiode assemblies Dec. 24, 1996
5585280 Method of fabricating solid state radiation imager with high integrity barrier layer Dec. 17, 1996
5556794 Method of manufacturing a semiconductor device having low sodium concentration Sep. 17, 1996
5557133 Voltage-controlled variable spectrum photodetector for 2D color image detection and reconstruction applications Sep. 17, 1996
5521400 Semiconductor photoelectrically sensitive device with low sodium concentration May. 28, 1996
5463225 Solid state radiation imager with high integrity barrier layer and method of fabricating Oct. 31, 1995
5456762 Photoelectric conversion elements Oct. 10, 1995
5442198 Non-single crystal semiconductor device with sub-micron grain size Aug. 15, 1995
5414275 Photoelectric converting device and image processing apparatus utilizing the same May. 9, 1995
5391893 Nonsingle crystal semiconductor and a semiconductor device using such semiconductor Feb. 21, 1995
5370972 Amorphous silicon photodiode with sloped sidewalls and method of fabrication Dec. 6, 1994
5344499 Electric device of hydrogenated amorphous silicon and method of manufacture Sep. 6, 1994
5298455 Method for producing a non-single crystal semiconductor device Mar. 29, 1994
5264077 Method for producing a conductive oxide pattern Nov. 23, 1993
5233181 Photosensitive element with two layer passivation coating Aug. 3, 1993
5191394 Amorphous silicon photodiode with sloped sidewalls and method of fabrication Mar. 2, 1993
5164322 Method for manufacturing photoelectric conversion device with a high response speed Nov. 17, 1992
5134081 Image sensor free from undesirable incident light rays and a manufacturing method for the same Jul. 28, 1992

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