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Class Information
Number: 257/E31.059
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Semiconductor devices responsive or sensitive to electromagnetic radiation (e.g., infrared radiation, adapted for conversion of radiation into electrical energy or for control of electrical energy by such radiation processes, or apparatus peculiar to manufacture or treatment of such devices, or of parts thereof) (epo) > Adapted to control current flow through device (e.g., photoresistor) (epo) > For device having potential or surface barrier (e.g., phototransistor) (epo) > Device sensitive to infrared, visible, or ultraviolet radiation (epo) > Characterized by only one potential or surface barrier (epo) > Pn homojunction potential barrier (epo) > Device comprising active layer formed only by group iii-v compound (epo)
Description: This subclass is indented under subclass E31.057. This subclass is substantially the same in scope as ECLA classification H01L31/103C.

Patents under this class:
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Patent Number Title Of Patent Date Issued
8664739 Image sensor comprising isolated germanium photodetectors integrated with a silicon substrate and silicon circuitry Mar. 4, 2014
8647901 Method for forming a nitride semiconductor layer and method for separating the nitride semiconductor layer from the substrate Feb. 11, 2014
8609517 MOCVD for growing III-V compound semiconductors on silicon substrates Dec. 17, 2013
8513759 Photodiode array Aug. 20, 2013
8426890 Semiconductor device and manufacturing method with improved epitaxial quality of III-V compound on silicon surfaces Apr. 23, 2013
8344354 Spin-polarized electron source Jan. 1, 2013
8293566 Strained layer superlattice focal plane array having a planar structure Oct. 23, 2012
8242540 Epitaxial growth of III-V compound semiconductors on silicon surfaces Aug. 14, 2012
8183134 Semiconductor device and manufacturing method with improved epitaxial quality of III-V compound on silicon surfaces May. 22, 2012
8134141 Detector with tunable spectral response Mar. 13, 2012
8026534 III-V semiconductor device structures Sep. 27, 2011
7968890 Semiconductor device and manufacturing method thereof Jun. 28, 2011
7968909 Reconditioned substrates for fabricating compound material wafers Jun. 28, 2011
7943964 Al.sub.xGa.sub.yIn.sub.1-x-yN crystal substrate, semiconductor device, and method of manufacturing the same May. 17, 2011
7893460 Semiconductor light detecting element including first and second multilayer light reflective structures sandwiching and contacting a light absorptive layer Feb. 22, 2011
7834380 Field effect transistor and method for fabricating the same Nov. 16, 2010
7755079 Strained-layer superlattice focal plane array having a planar structure Jul. 13, 2010
7309884 Semiconductor light receiving device and method of fabricating the same Dec. 18, 2007
7307290 Compound semiconductor wafer and manufacturing method thereof Dec. 11, 2007
7132677 Super bright light emitting diode of nanorod array structure having InGaN quantum well and method for manufacturing the same Nov. 7, 2006
6987484 Detector for electromagnetic radiation and a method of detecting electromagnetic radiation Jan. 17, 2006
6924541 Semiconductor photodetection device Aug. 2, 2005
6906326 Quantum dot infrared photodetector focal plane array Jun. 14, 2005
6903364 Semiconductor structures using a group III-nitride material system with reduced phase separation and method of fabrication Jun. 7, 2005
6897447 Bias controlled multi-spectral infrared photodetector and imager May. 24, 2005
6894322 Back illuminated photodiodes May. 17, 2005
6885075 Photodiode Apr. 26, 2005
6831265 Photodetector having improved photoresponsitivity over a broad wavelength region Dec. 14, 2004
6784512 Photodiode and method of producing same Aug. 31, 2004
6734515 Semiconductor light receiving element May. 11, 2004
6724063 Photodiode and photodiode module Apr. 20, 2004
6718108 Semiconductor photodetector Apr. 6, 2004
6696740 Photodiode Feb. 24, 2004
6693337 Semiconductor photodetection device Feb. 17, 2004
6521968 Photodiode Feb. 18, 2003
6518080 Method of fabricating low dark current photodiode arrays Feb. 11, 2003
6518638 Photodiode Feb. 11, 2003
6501104 High speed semiconductor photodetector Dec. 31, 2002
6483116 High performance ultraviolet imager for operation at room temperature Nov. 19, 2002
6476374 Room temperature, low-light-level visible imager Nov. 5, 2002
6458614 Opto-electronic integrated circuit Oct. 1, 2002
6452220 Current isolating epitaxial buffer layers for high voltage photodiode array Sep. 17, 2002
6437415 Photodiode and photodiode module Aug. 20, 2002
6303968 Semiconductor light-receiving element Oct. 16, 2001
6228673 Method of fabricating a surface coupled InGaAs photodetector May. 8, 2001
6229150 Semiconductor structures using a group III-nitride quaternary material system with reduced phase separation and method of fabrication May. 8, 2001
6222200 Photodetector with spectrally extended responsivity Apr. 24, 2001
6177686 High power waveguide photodiode with an absorption layer with reduced absorption coefficient Jan. 23, 2001
6002142 Integrated optoelectronic structures incorporating P-type and N-type layer disordered regions Dec. 14, 1999
5978399 Electrically-tunable infrared detectors and method based on intraband transitions in quantum well structures Nov. 2, 1999

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