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Class Information
Number: 257/E31.052
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Semiconductor devices responsive or sensitive to electromagnetic radiation (e.g., infrared radiation, adapted for conversion of radiation into electrical energy or for control of electrical energy by such radiation processes, or apparatus peculiar to manufacture or treatment of such devices, or of parts thereof) (epo) > Adapted to control current flow through device (e.g., photoresistor) (epo)
Description: This subclass is indented under subclass E31.001. This subclass is substantially the same in scope as ECLA classification H01L31/08.
Sub-classes under this class:
Patents under this class:
| Patent Number |
Title Of Patent |
Date Issued |
| 7317234 |
Means of integrating a microphone in a standard integrated circuit process |
Jan. 8, 2008 |
| 7180150 |
CMOS image sensor and method for detecting color sensitivity thereof |
Feb. 20, 2007 |
| 7095060 |
Unit for driving light-emitting device |
Aug. 22, 2006 |
| 6955932 |
Single and double-gate pseudo-FET devices for semiconductor materials evaluation |
Oct. 18, 2005 |
| 6263124 |
Photoconductive switch |
Jul. 17, 2001 |
| 6252221 |
Photo-conductive switch having an improved semiconductor structure |
Jun. 26, 2001 |
| 6222141 |
Irradiation controlled switch |
Apr. 24, 2001 |
| 6194699 |
Photoconductive switch with multiple layers |
Feb. 27, 2001 |
| H1835 |
Bistable photoconductive switches particularly suited for frequency-agile, radio-frequency sources |
Feb. 1, 2000 |
| 5912455 |
Photoconductor-based electrical switch |
Jun. 15, 1999 |
| 5905272 |
Optical receiver |
May. 18, 1999 |
| 5864166 |
Bistable photoconductive switches particularly suited for frequency-agile, radio-frequency sources |
Jan. 26, 1999 |
| 5844288 |
Photoconductive element and method for measuring high frequency signals |
Dec. 1, 1998 |
| 5811841 |
Photoconductive switching with thin layer enhanced breakdown charateristics |
Sep. 22, 1998 |
| 5808349 |
Magnetized photoconductive semiconductor switch |
Sep. 15, 1998 |
| 5804815 |
GaAs photoconductive semiconductor switch |
Sep. 8, 1998 |
| 5773817 |
Ultrafast, high voltage pulser using circumferentially illuminated, laser-switched radial transmission line |
Jun. 30, 1998 |
| H1717 |
Bistable photoconductive switches particularly suited for frequency-agile, radio-frequency sources |
Apr. 7, 1998 |
| 5637862 |
Detector for determining the wavelength of an optical signal |
Jun. 10, 1997 |
| 5629665 |
Conducting-polymer bolometer |
May. 13, 1997 |
| 5596209 |
Photoconductive semiconductor control device |
Jan. 21, 1997 |
| 5508625 |
Voltage stand off characteristics of photoconductor devices |
Apr. 16, 1996 |
| 5428226 |
Relativistic semiconductor plasma wave frequency up-converter with energized portion |
Jun. 27, 1995 |
| 5403673 |
Functional thin film member |
Apr. 4, 1995 |
| 5382788 |
Monolithic photoconductive bipolar pulsar utilizing a radial transmission line |
Jan. 17, 1995 |
| 5374589 |
Process of making a bistable photoconductive component |
Dec. 20, 1994 |
| 5332911 |
Semiconductor component with adiabatic transport in edge channels |
Jul. 26, 1994 |
| 5323024 |
Relativistic semiconductor plasma wave frequency up-converter |
Jun. 21, 1994 |
| 5309132 |
Technique for trimming photoresistors and trimmed photoresistors |
May. 3, 1994 |
| 5293037 |
Opto-electronic converter with electron mirrors and quantum wire |
Mar. 8, 1994 |
| 5285068 |
Photo-detector and photo-detection method using the same |
Feb. 8, 1994 |
| 5262657 |
Optically activated wafer-scale pulser with AlGaAs epitaxial layer |
Nov. 16, 1993 |
| 5170238 |
Switching element with organic insulative region |
Dec. 8, 1992 |
| 5139913 |
Photosensor having a monomolecular membranes of squarylium pigment |
Aug. 18, 1992 |
| 5140398 |
Switching device |
Aug. 18, 1992 |
| 4843446 |
Superconducting photodetector |
Jun. 27, 1989 |
| 4782227 |
Image sensor with memory |
Nov. 1, 1988 |
| 4754130 |
Method and means for detecting optically transmitted signals and establishing optical interference pattern between electrodes |
Jun. 28, 1988 |
| 4727349 |
Depleted channel photoconductor |
Feb. 23, 1988 |
| 4695733 |
Photoconductive power switch |
Sep. 22, 1987 |
| 4693599 |
Apparatus for measuring light beam characteristics |
Sep. 15, 1987 |
| 4678732 |
Method for manufacture of photo-semiconductor |
Jul. 7, 1987 |
| 4672578 |
Method of information recording on a semiconductor wafer |
Jun. 9, 1987 |
| 4652335 |
Process for producing a photoelectric detector of the high-sensitivity photoresistor type |
Mar. 24, 1987 |
| 4626883 |
Textured crystal picosecond photoresponsive element |
Dec. 2, 1986 |
| H111 |
Gallium arsenide material and process evaluation by means of pulsed photoconductance in test devices |
Aug. 5, 1986 |
| 4569892 |
Photoconductive member with amorphous silicon germanium regions and containing oxygen |
Feb. 11, 1986 |
| 4482881 |
Thick extended contact photoconductor |
Nov. 13, 1984 |
| 4463279 |
Doped photoconductive film comprising selenium and tellurium |
Jul. 31, 1984 |
| 4457949 |
Method of producing a photoelectric conversion layer |
Jul. 3, 1984 |
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