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Class Information
Number: 257/E31.049
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Semiconductor devices responsive or sensitive to electromagnetic radiation (e.g., infrared radiation, adapted for conversion of radiation into electrical energy or for control of electrical energy by such radiation processes, or apparatus peculiar to manufacture or treatment of such devices, or of parts thereof) (epo) > Characterized by semiconductor body (epo) > Characterized by semiconductor body crystalline structure or plane (epo) > Including amorphous semiconductor (epo) > Including only group iv element (epo) > Including group iv compound (e.g., sige, sic) (epo)
Description: This subclass is indented under subclass E31.048. This subclass is substantially the same in scope as ECLA classification H01L31/0376B2.
Patents under this class:
| Patent Number |
Title Of Patent |
Date Issued |
| 7615849 |
Semiconductor device and manufacturing method thereof |
Nov. 10, 2009 |
| 7553687 |
Dual seed semiconductor photodetectors |
Jun. 30, 2009 |
| 7544585 |
Structure of strained silicon on insulator and method of manufacturing the same |
Jun. 9, 2009 |
| 7514730 |
Method of fabricating a non-floating body device with enhanced performance |
Apr. 7, 2009 |
| 7368763 |
Semiconductor device and manufacturing method thereof |
May. 6, 2008 |
| 7288802 |
Virtual body-contacted trigate |
Oct. 30, 2007 |
| 7233018 |
High voltage MOSFET having Si/SiGe heterojuction structure and method of manufacturing the same |
Jun. 19, 2007 |
| 7176504 |
SiGe MOSFET with an erosion preventing Si.sub.x1Ge.sub.y1 layer |
Feb. 13, 2007 |
| 7125786 |
Method of forming vias in silicon carbide and resulting devices and circuits |
Oct. 24, 2006 |
| 6949761 |
Structure for and method of fabricating a high-mobility field-effect transistor |
Sep. 27, 2005 |
| 6680489 |
Amorphous silicon carbide thin film coating |
Jan. 20, 2004 |
| 6268229 |
Integrated circuit devices and methods employing amorphous silicon carbide resistor materials |
Jul. 31, 2001 |
| 6080998 |
Amorphous silicon germanium thin film and photovoltaic element |
Jun. 27, 2000 |
| 6031250 |
Integrated circuit devices and methods employing amorphous silicon carbide resistor materials |
Feb. 29, 2000 |
| 5923049 |
Trichromatic sensor |
Jul. 13, 1999 |
| 5869851 |
Photoelectric conversion device with graded band gap and carrier concentration |
Feb. 9, 1999 |
| 5700467 |
Amorphous silicon carbide film and photovoltaic device using the same |
Dec. 23, 1997 |
| 5686734 |
Thin film semiconductor device and photoelectric conversion device using the thin film semiconductor device |
Nov. 11, 1997 |
| 5616932 |
Amorphous silicon germanium film and semiconductor device using the same |
Apr. 1, 1997 |
| 5403404 |
Multijunction photovoltaic device and method of manufacture |
Apr. 4, 1995 |
| 5324364 |
Pin junction photovoltaic device having an i-type a-SiGe semiconductor layer with a maximal point for the Ge content |
Jun. 28, 1994 |
| 5282993 |
Light-stable semiconductor material based on amorphous germanium and a method for its production |
Feb. 1, 1994 |
| 5279681 |
Photovoltaic device with layer region containing germanium therin |
Jan. 18, 1994 |
| 5246506 |
Multijunction photovoltaic device and fabrication method |
Sep. 21, 1993 |
| 5233265 |
Photoconductive imaging apparatus |
Aug. 3, 1993 |
| 5230753 |
Photostable amorphous silicon-germanium alloys |
Jul. 27, 1993 |
| 5206180 |
Process for producing an amorphous photoelectric transducer |
Apr. 27, 1993 |
| 5114498 |
Photovoltaic device |
May. 19, 1992 |
| 5104455 |
Amorphous semiconductor solar cell |
Apr. 14, 1992 |
| 5021103 |
Method of forming microcrystalline silicon-containing silicon carbide film |
Jun. 4, 1991 |
| 5011759 |
Semiconductor element and method of forming same and article in which said element is used |
Apr. 30, 1991 |
| 4980736 |
Electric conversion device |
Dec. 25, 1990 |
| 4849797 |
Thin film transistor |
Jul. 18, 1989 |
| 4839240 |
Multilayer photoconductive material |
Jun. 13, 1989 |
| 4782376 |
Photovoltaic device with increased open circuit voltage |
Nov. 1, 1988 |
| 4768072 |
Multilayer semiconductor device having an amorphous carbon and silicon layer |
Aug. 30, 1988 |
| 4572882 |
Photoconductive member containing amorphous silicon and germanium |
Feb. 25, 1986 |
| 4510224 |
Electrophotographic photoreceptors having amorphous silicon photoconductors |
Apr. 9, 1985 |
| 4478654 |
Amorphous silicon carbide method |
Oct. 23, 1984 |
| 4329699 |
Semiconductor device and method of manufacturing the same |
May. 11, 1982 |
| 4147667 |
Photoconductor for GaAs laser addressed devices |
Apr. 3, 1979 |
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