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Class Information
Number: 257/E31.048
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Semiconductor devices responsive or sensitive to electromagnetic radiation (e.g., infrared radiation, adapted for conversion of radiation into electrical energy or for control of electrical energy by such radiation processes, or apparatus peculiar to manufacture or treatment of such devices, or of parts thereof) (epo) > Characterized by semiconductor body (epo) > Characterized by semiconductor body crystalline structure or plane (epo) > Including amorphous semiconductor (epo) > Including only group iv element (epo)
Description: This subclass is indented under subclass E31.047. This subclass is substantially the same in scope as ECLA classification H01L31/0376B.
Sub-classes under this class:
Patents under this class:
| Patent Number |
Title Of Patent |
Date Issued |
| 4758527 |
Method of making semiconductor photo-electrically-sensitive device |
Jul. 19, 1988 |
| 4738729 |
Amorphous silicon semiconductor solar cell |
Apr. 19, 1988 |
| 4728370 |
Amorphous photovoltaic elements |
Mar. 1, 1988 |
| 4726851 |
Amorphous silicon semiconductor film and production process thereof |
Feb. 23, 1988 |
| 4714950 |
Solid-state photo sensor device |
Dec. 22, 1987 |
| 4690717 |
Method of making semiconductor device |
Sep. 1, 1987 |
| 4678733 |
Member having light receiving layer of A-Si: Ge (C,N,O) A-Si/surface antireflection layer with non-parallel interfaces |
Jul. 7, 1987 |
| 4658280 |
Amorphous silicon photosensor of layers having differing conductivity |
Apr. 14, 1987 |
| 4626885 |
Photosensor having impurity concentration gradient |
Dec. 2, 1986 |
| 4612559 |
Solar cell of amorphous silicon |
Sep. 16, 1986 |
| 4591892 |
Semiconductor photoelectric conversion device |
May. 27, 1986 |
| 4546009 |
High-mobility amorphous silicon displaying non-dispersive transport properties |
Oct. 8, 1985 |
| 4479028 |
Amorphous solar cell |
Oct. 23, 1984 |
| 4464415 |
Photoelectric conversion semiconductor manufacturing method |
Aug. 7, 1984 |
| 4453173 |
Photocell utilizing a wide-bandgap semiconductor material |
Jun. 5, 1984 |
| 4438154 |
Method of fabricating an amorphous silicon film |
Mar. 20, 1984 |
| 4409134 |
Photoelectric conversion semiconductor and manufacturing method thereof |
Oct. 11, 1983 |
| 4359367 |
Silicon-based semiconductor devices |
Nov. 16, 1982 |
| 4326126 |
High speed photodetector |
Apr. 20, 1982 |
| 4272641 |
Tandem junction amorphous silicon solar cells |
Jun. 9, 1981 |
| 4251289 |
Gradient doping in amorphous silicon |
Feb. 17, 1981 |
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