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Class Information
Number: 257/E31.047
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Semiconductor devices responsive or sensitive to electromagnetic radiation (e.g., infrared radiation, adapted for conversion of radiation into electrical energy or for control of electrical energy by such radiation processes, or apparatus peculiar to manufacture or treatment of such devices, or of parts thereof) (epo) > Characterized by semiconductor body (epo) > Characterized by semiconductor body crystalline structure or plane (epo) > Including amorphous semiconductor (epo)
Description: This subclass is indented under subclass E31.04. This subclass is substantially the same in scope as ECLA classification H01L31/0376.










Sub-classes under this class:

Class Number Class Name Patents
257/E31.048 Including only group iv element (epo) 85


Patents under this class:
1 2

Patent Number Title Of Patent Date Issued
4450316 Amorphous silicon photovoltaic device having two-layer transparent electrode May. 22, 1984
4409134 Photoelectric conversion semiconductor and manufacturing method thereof Oct. 11, 1983
4177474 High temperature amorphous semiconductor member and method of making the same Dec. 4, 1979
4173497 Amorphous lead dioxide photovoltaic generator Nov. 6, 1979
4024558 Photovoltaic heterojunction device employing a glassy amorphous material as an active layer May. 17, 1977
4003075 Glass electronic devices employing ion-doped insulating glassy amorphous material Jan. 11, 1977

1 2










 
 
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