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Class Information
Number: 257/E31.044
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Semiconductor devices responsive or sensitive to electromagnetic radiation (e.g., infrared radiation, adapted for conversion of radiation into electrical energy or for control of electrical energy by such radiation processes, or apparatus peculiar to manufacture or treatment of such devices, or of parts thereof) (epo) > Characterized by semiconductor body (epo) > Characterized by semiconductor body crystalline structure or plane (epo) > Including polycrystalline semiconductor (epo) > Including only group iv element (epo)
Description: This subclass is indented under subclass E31.043. This subclass is substantially the same in scope as ECLA classification H01L31/0368B.

Sub-classes under this class:

Class Number Class Name Patents
257/E31.046 Including microcrystalline group iv compound (e.g., c-sige, c-sic) (epo) 15
257/E31.045 Including microcrystalline silicon ( c-si) (epo) 28

Patents under this class:
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Patent Number Title Of Patent Date Issued
8134179 Photodiode with a reduced dark current and method for the production thereof Mar. 13, 2012
7999250 Silicon-germanium-carbon semiconductor structure Aug. 16, 2011
7719031 Heterojunction biploar transistor and method for manufacturing same May. 18, 2010
7279764 Silicon-based resonant cavity photodiode for image sensors Oct. 9, 2007
7075052 Photoelectric conversion device Jul. 11, 2006
6777714 Crystalline silicon semiconductor device and method for fabricating same Aug. 17, 2004
6653554 Thin film polycrystalline solar cells and methods of forming same Nov. 25, 2003
6649824 Photoelectric conversion device and method of production thereof Nov. 18, 2003
6576831 Multicrystalline silicon having a low proportion of active grain borders Jun. 10, 2003
6239451 Semiconduction devices having a thin film structure exhibiting high conductivity May. 29, 2001
6140666 Thin film semiconductor device with a semiconductor large including crystals of an average grain size with a range of 50-350-.ANG. Oct. 31, 2000
6013565 High conductivity thin film material for semiconductor device Jan. 11, 2000
5994164 Nanostructure tailoring of material properties using controlled crystallization Nov. 30, 1999
RE36156 Columnar-grained polycrystalline solar cell and process of manufacture Mar. 23, 1999
5769963 Photovoltaic device Jun. 23, 1998
5498904 Polycrystalline semiconductive film, semiconductor device using the same and method of manufacturing the same Mar. 12, 1996
5496416 Columnar-grained polycrystalline solar cell and process of manufacture Mar. 5, 1996
5486237 Polysilicon thin film and method of preparing polysilicon thin film and photovoltaic element containing same Jan. 23, 1996
5403771 Process for producing a solar cell by means of epitaxial growth process Apr. 4, 1995
5360745 Thin-film solar cell production method Nov. 1, 1994
5352614 Method of manufacturing a thin film semiconductor device Oct. 4, 1994
5336335 Columnar-grained polycrystalline solar cell and process of manufacture Aug. 9, 1994
5269852 Crystalline solar cell and method for producing the same Dec. 14, 1993
5266126 Semiconductor device and method for manufacturing the same Nov. 30, 1993
5260225 Integrated infrared sensitive bolometers Nov. 9, 1993
5254481 Polycrystalline solar cell manufacturing method Oct. 19, 1993
5242504 Photovoltaic device and manufacturing method therefor Sep. 7, 1993
5221365 Photovoltaic cell and method of manufacturing polycrystalline semiconductive film Jun. 22, 1993
5184200 Thin film semiconductor device with particular grain size Feb. 2, 1993
5087296 Solar battery and process for preparing same Feb. 11, 1992
5043785 Photosensor device photodiode and switch Aug. 27, 1991
4971832 HR-CVD process for the formation of a functional deposited film on a substrate with application of a voltage in the range of -5 to -100 V Nov. 20, 1990
4948741 Polysilicon photoconductor for integrated circuits Aug. 14, 1990
4821091 Polysilicon photoconductor for integrated circuits Apr. 11, 1989
4766477 Semiconductor device including a semiconductor layer having a polycrystalline silicon film with selected atomic constituency Aug. 23, 1988
4740829 Semiconductor device having a thin layer comprising germanium atoms as a matrix with a restricted range of hydrogen atom concentration Apr. 26, 1988
4719501 Semiconductor device having junction formed from two different hydrogenated polycrystalline silicon layers Jan. 12, 1988
4705659 Carbon film oxidation for free-standing film formation Nov. 10, 1987
4682206 Thin ribbon of semiconductor material Jul. 21, 1987
4613382 Method of forming passivated polycrystalline semiconductors Sep. 23, 1986
4602422 Flash compression process for making photovoltaic cells Jul. 29, 1986
4577588 Device for process-type deposition of polycrystalline silicon on carbon film Mar. 25, 1986
4559552 PIN semiconductor photoelectric conversion device with two oxide layers Dec. 17, 1985
4525223 Method of manufacturing a thin ribbon wafer of semiconductor material Jun. 25, 1985
4490573 Solar cells Dec. 25, 1984
4433202 Thin film solar cell Feb. 21, 1984
4431858 Method of making quasi-grain boundary-free polycrystalline solar cell structure and solar cell structure obtained thereby Feb. 14, 1984
4401840 Semicrystalline solar cell Aug. 30, 1983
4343830 Method for improving the efficiency of solar cells having imperfections Aug. 10, 1982
4321099 Method of fabricating Schottky barrier solar cell Mar. 23, 1982

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