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Class Information
Number: 257/E31.036
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Semiconductor devices responsive or sensitive to electromagnetic radiation (e.g., infrared radiation, adapted for conversion of radiation into electrical energy or for control of electrical energy by such radiation processes, or apparatus peculiar to manufacture or treatment of such devices, or of parts thereof) (epo) > Characterized by semiconductor body (epo) > Characterized by semiconductor body shape, relative size, or disposition of semiconductor regions (epo) > Multiple quantum well structure (epo) > Doping superlattice (e.g., nipi superlattice) (epo)
Description: This subclass is indented under subclass E31.033. This subclass is substantially the same in scope as ECLA classification H01L31/0352B4.










Patents under this class:

Patent Number Title Of Patent Date Issued
8642434 Structure and method for mobility enhanced MOSFETS with unalloyed silicide Feb. 4, 2014
8492746 Light emitting diode (LED) dice having wavelength conversion layers Jul. 23, 2013
8476616 Materials for electronic and optoelectronic devices having enhanced charge transfer Jul. 2, 2013
8421058 Light emitting diode structure having superlattice with reduced electron kinetic energy therein Apr. 16, 2013
8415192 Colloidal nanoparticle materials for photodetectors and photovoltaics Apr. 9, 2013
8247793 ZnO-based thin film and ZnO-based semiconductor element Aug. 21, 2012
8022390 Lateral conduction infrared photodetector Sep. 20, 2011
8022391 Photodetectors and photovoltaics based on semiconductor nanocrystals Sep. 20, 2011
7786468 Layer transfer of low defect SiGe using an etch-back process Aug. 31, 2010
7427773 Layer transfer of low defect SiGe using an etch-back process Sep. 23, 2008
5132763 InAs hole-immobilized doping superlattice long-wave-infrared detector Jul. 21, 1992
5031012 Devices having asymmetric delta-doping Jul. 9, 1991
4974044 Devices having asymmetric delta-doping Nov. 27, 1990
4883770 Selective NIPI doping super lattice contacts and other semiconductor device structures formed by shadow masking fabrication Nov. 28, 1989
4839714 High-gain photodetectors made from NIPI mesas with selective lateral contacts Jun. 13, 1989
4775881 Semiconductor device for detecting electromagnetic radiation or particles Oct. 4, 1988











 
 
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