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Class Information
Number: 257/E31.035
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Semiconductor devices responsive or sensitive to electromagnetic radiation (e.g., infrared radiation, adapted for conversion of radiation into electrical energy or for control of electrical energy by such radiation processes, or apparatus peculiar to manufacture or treatment of such devices, or of parts thereof) (epo) > Characterized by semiconductor body (epo) > Characterized by semiconductor body shape, relative size, or disposition of semiconductor regions (epo) > Multiple quantum well structure (epo) > Including, apart from doping material or other impurity, only group iv element or compound (e.g., si-sige superlattice) (epo)
Description: This subclass is indented under subclass E31.033. This subclass is substantially the same in scope as ECLA classification H01L31/0352B3.










Patents under this class:

Patent Number Title Of Patent Date Issued
8642434 Structure and method for mobility enhanced MOSFETS with unalloyed silicide Feb. 4, 2014
8492746 Light emitting diode (LED) dice having wavelength conversion layers Jul. 23, 2013
8455858 Semiconductor structure for reducing band-to-band tunneling (BTBT) leakage Jun. 4, 2013
8421058 Light emitting diode structure having superlattice with reduced electron kinetic energy therein Apr. 16, 2013
8183655 Radiation detector of the .DELTA.E-E type with insulation trenches May. 22, 2012
8093143 Method for producing a wafer comprising a silicon single crystal substrate having a front and a back side and a layer of SiGe deposited on the front side Jan. 10, 2012
8039869 Gallium nitride device substrate containing a lattice parameter altering element Oct. 18, 2011
8035098 Transistor with asymmetric silicon germanium source region Oct. 11, 2011
8017504 Transistor having a high-k metal gate stack and a compressively stressed channel Sep. 13, 2011
7884354 Germanium on insulator (GOI) semiconductor substrates Feb. 8, 2011
7847360 Radiation detector of the deltaE-E type with insulation trenches Dec. 7, 2010
7682859 Patterned strained semiconductor substrate and device Mar. 23, 2010
7612364 MOS devices with source/drain regions having stressed regions and non-stressed regions Nov. 3, 2009
7598513 Si.sub.xSn.sub.yGe.sub.1-x-y and related alloy heterostructures based on Si, Ge and Sn Oct. 6, 2009
7569848 Mobility enhanced CMOS devices Aug. 4, 2009
7442599 Silicon/germanium superlattice thermal sensor Oct. 28, 2008
7417248 Transistor with shallow germanium implantation region in channel Aug. 26, 2008
7233018 High voltage MOSFET having Si/SiGe heterojuction structure and method of manufacturing the same Jun. 19, 2007
7208754 Strained silicon structure Apr. 24, 2007
7202102 Doped absorption for enhanced responsivity for high speed photodiodes Apr. 10, 2007
6809016 Diffusion stop implants to suppress as punch-through in SiGe Oct. 26, 2004
6784466 Si/SiGe optoelectronic integrated circuits Aug. 31, 2004
6433354 Superlattice infrared photodetector having front and rear blocking layers to enhance background limited performance Aug. 13, 2002
6403975 Semiconductor components, in particular photodetectors, light emitting diodes, optical modulators and waveguides with multilayer structures grown on silicon substrates Jun. 11, 2002
6399502 Process for fabricating a planar heterostructure Jun. 4, 2002
6342720 Voltage-controlled wavelength-selective photodetector Jan. 29, 2002
6331445 Phototonic device with strain-induced three dimensional growth morphology Dec. 18, 2001
6111266 Semiconductor substrate for reflecting electromagnetic radiation within a wavelength range Aug. 29, 2000
6043517 SiGe photodetector with high efficiency Mar. 28, 2000
6008506 SOI optical semiconductor device Dec. 28, 1999
5994154 Method of fabricating an optical semiconductor device Nov. 30, 1999
5942789 Photodetector and method for fabricating same Aug. 24, 1999
5886361 Optoelectronic component having a modulation-doped layer structure Mar. 23, 1999
5818322 Silicon photosensitive element Oct. 6, 1998
5796118 Photodetection semiconductor device Aug. 18, 1998
5783839 Semiconductor device having a GESC layer between silicon layers with triangular Ge concentration Jul. 21, 1998
5747860 Method and apparatus for fabricating semiconductor device with photodiode May. 5, 1998
5576221 Manufacturing method of semiconductor device Nov. 19, 1996
5548128 Direct-gap germanium-tin multiple-quantum-well electro-optical devices on silicon or germanium substrates Aug. 20, 1996
5539214 Quantum bridges fabricated by selective etching of superlattice structures Jul. 23, 1996
5399880 Phototransistor with quantum well base structure Mar. 21, 1995
5296699 Quantum well photoelectric detector with improved detectivity Mar. 22, 1994
5030831 Method of operating p-i-n diodes and superlattice devices as far infrared detectors Jul. 9, 1991
4843439 Tailorable infrared sensing device with strain layer superlattice structure Jun. 27, 1989
4792832 Superlattice semiconductor having high carrier density Dec. 20, 1988
4772924 Device having strain induced region of altered bandgap Sep. 20, 1988
4725870 Silicon germanium photodetector Feb. 16, 1988
4711857 Tailorable infrared sensing device with strain layer superlattice structure Dec. 8, 1987
4695857 Superlattice semiconductor having high carrier density Sep. 22, 1987











 
 
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