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Class Information
Number: 257/E31.034
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Semiconductor devices responsive or sensitive to electromagnetic radiation (e.g., infrared radiation, adapted for conversion of radiation into electrical energy or for control of electrical energy by such radiation processes, or apparatus peculiar to manufacture or treatment of such devices, or of parts thereof) (epo) > Characterized by semiconductor body (epo) > Characterized by semiconductor body shape, relative size, or disposition of semiconductor regions (epo) > Multiple quantum well structure (epo) > Characterized by amorphous semiconductor layer (epo)
Description: This subclass is indented under subclass E31.033. This subclass is substantially the same in scope as ECLA classification H01L31/0352B2.










Patents under this class:

Patent Number Title Of Patent Date Issued
8629445 Semiconductor device, manufacturing method thereof, and electronic appliance Jan. 14, 2014
8492746 Light emitting diode (LED) dice having wavelength conversion layers Jul. 23, 2013
8415787 Integrated circuits having interconnects and heat dissipators based on nanostructures Apr. 9, 2013
8349644 Mono-silicon solar cells Jan. 8, 2013
8273591 Super lattice/quantum well nanowires Sep. 25, 2012
8258002 Phase change memory device resistant to stack pattern collapse and a method for manufacturing the same Sep. 4, 2012
8183659 Integrated circuits having interconnects and heat dissipators based on nanostructures May. 22, 2012
7791106 Gallium nitride material structures including substrates and methods associated with the same Sep. 7, 2010
7777291 Integrated circuits having interconnects and heat dissipators based on nanostructures Aug. 17, 2010
7682945 Phase change element extension embedded in an electrode Mar. 23, 2010
7671354 Integrated circuit including spacer defined electrode Mar. 2, 2010
7601984 Field effect transistor with amorphous oxide active layer containing microcrystals and gate electrode opposed to active layer through gate insulator Oct. 13, 2009
7352044 Photoelectric transducer, photoelectric transducer apparatus, and iron silicide film Apr. 1, 2008
6831264 CMOS photodetector including an amorphous silicon photodiode and a saturation system Dec. 14, 2004
6559471 Quantum well infrared photodetector and method for fabricating same May. 6, 2003
6117702 Process for making semiconductor photo detector containing crystalline amplification layer Sep. 12, 2000
5847418 Semiconductor photo detector containing crystalline amplification layer Dec. 8, 1998
5783838 Non-single crystalline semiconductor photo detector with super lattice Jul. 21, 1998
5055141 Enhancement of short-circuit current by use of wide bandgap N-layers in P-I-N amorphous silicon photovoltaic cells Oct. 8, 1991
4803141 Electrophotographic superlattice photoreceptor Feb. 7, 1989
4784702 PIN photodiode formed from an amorphous semiconductor Nov. 15, 1988
4719123 Method for fabricating periodically multilayered film Jan. 12, 1988
4718947 Superlattice doped layers for amorphous silicon photovoltaic cells Jan. 12, 1988
4701395 Amorphous photoreceptor with high sensitivity to long wavelengths Oct. 20, 1987
4642144 Proximity doping of amorphous semiconductors Feb. 10, 1987
4598164 Solar cell made from amorphous superlattice material Jul. 1, 1986











 
 
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