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Class Information
Number: 257/E31.03
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Semiconductor devices responsive or sensitive to electromagnetic radiation (e.g., infrared radiation, adapted for conversion of radiation into electrical energy or for control of electrical energy by such radiation processes, or apparatus peculiar to manufacture or treatment of such devices, or of parts thereof) (epo) > Characterized by semiconductor body (epo) > Characterized by semiconductor body material (epo) > Inorganic materials (epo) > Including, apart from doping material or other impurity, only compound other than group ii-vi, iii-v, and iv compound (epo) > Comprising only group iv-vi or ii-iv-vi chalcogenide compound (e.g., pbsnte) (epo) > Characterized by doping material (epo)
Description: This subclass is indented under subclass E31.029. This subclass is substantially the same in scope as ECLA classification H01L31/032D2.










Patents under this class:

Patent Number Title Of Patent Date Issued
8039298 Phase changeable memory cell array region and method of forming the same Oct. 18, 2011
7638787 Phase changeable memory cell array region and method of forming the same Dec. 29, 2009
7354793 Method of forming a PCRAM device incorporating a resistance-variable chalocogenide element Apr. 8, 2008
7348209 Resistance variable memory device and method of fabrication Mar. 25, 2008
6509066 Sensitized photoconductive infrared detectors Jan. 21, 2003
5196692 Photoelectric transducer switchable to a high-resolution or high-sensitivity mode Mar. 23, 1993











 
 
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