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Class Information
Number: 257/E31.029
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Semiconductor devices responsive or sensitive to electromagnetic radiation (e.g., infrared radiation, adapted for conversion of radiation into electrical energy or for control of electrical energy by such radiation processes, or apparatus peculiar to manufacture or treatment of such devices, or of parts thereof) (epo) > Characterized by semiconductor body (epo) > Characterized by semiconductor body material (epo) > Inorganic materials (epo) > Including, apart from doping material or other impurity, only compound other than group ii-vi, iii-v, and iv compound (epo) > Comprising only group iv-vi or ii-iv-vi chalcogenide compound (e.g., pbsnte) (epo)
Description: This subclass is indented under subclass E31.026. This subclass is substantially the same in scope as ECLA classification H01L31/032D.










Sub-classes under this class:

Class Number Class Name Patents
257/E31.03 Characterized by doping material (epo) 6


Patents under this class:
1 2 3 4 5

Patent Number Title Of Patent Date Issued
7700485 Electro- and electroless plating of metal in the manufacture of PCRAM devices Apr. 20, 2010
7696018 Methods for fabricating multi-terminal phase change devices Apr. 13, 2010
7696507 Storage nodes, phase change memory devices, and methods of manufacturing the same Apr. 13, 2010
7692272 Electrically rewritable non-volatile memory element and method of manufacturing the same Apr. 6, 2010
7679074 Integrated circuit having multilayer electrode Mar. 16, 2010
7679075 Phase change memory array and fabrication thereof Mar. 16, 2010
7670887 Field-effect transistors with weakly coupled layered inorganic semiconductors Mar. 2, 2010
7671353 Integrated circuit having contact including material between sidewalls Mar. 2, 2010
7663132 Resistance change memory device Feb. 16, 2010
7652279 Three-terminal cascade switch for controlling static power consumption in integrated circuits Jan. 26, 2010
7646006 Three-terminal cascade switch for controlling static power consumption in integrated circuits Jan. 12, 2010
7642549 Phase change memory cells delineated by regions of modified film resistivity Jan. 5, 2010
7638787 Phase changeable memory cell array region and method of forming the same Dec. 29, 2009
7612359 Microelectronic devices using sacrificial layers and structures fabricated by same Nov. 3, 2009
7595218 Programmable resistive RAM and manufacturing method Sep. 29, 2009
7589344 Semiconductor device and method of producing the same Sep. 15, 2009
7589367 Layout structure in semiconductor memory device comprising global work lines, local work lines, global bit lines and local bit lines Sep. 15, 2009
7586777 Resistance variable memory with temperature tolerant materials Sep. 8, 2009
7579210 Planar segmented contact Aug. 25, 2009
7579616 Four-terminal programmable via-containing structure and method of fabricating same Aug. 25, 2009
7575950 Semiconductor device and a method of manufacturing the same Aug. 18, 2009
7569417 Method of forming a phase changeable material layer, a method of manufacturing a phase changeable memory unit, and a method of manufacturing a phase changeable semiconductor memory device Aug. 4, 2009
7560722 Optimized solid electrolyte for programmable metallization cell devices and structures Jul. 14, 2009
7527985 Method for manufacturing a resistor random access memory with reduced active area and reduced contact areas May. 5, 2009
7528401 Agglomeration elimination for metal sputter deposition of chalcogenides May. 5, 2009
7511297 Phase change memory device and method of fabricating the same Mar. 31, 2009
7494849 Methods for fabricating multi-terminal phase change devices Feb. 24, 2009
7491573 Phase change materials for applications that require fast switching and high endurance Feb. 17, 2009
7470922 Increasing adherence of dielectrics to phase change materials Dec. 30, 2008
7456420 Electrode for phase change memory device and method Nov. 25, 2008
7449711 Phase-change-type semiconductor memory device Nov. 11, 2008
7405420 Method and system for chalcogenide-based nanowire memory Jul. 29, 2008
7399655 Damascene conductive line for contacting an underlying memory element Jul. 15, 2008
7394088 Thermally contained/insulated phase change memory device and method (combined) Jul. 1, 2008
7393798 Resistance variable memory with temperature tolerant materials Jul. 1, 2008
7391050 Phase change memory device with thermal insulating layers Jun. 24, 2008
7385219 Optimized solid electrolyte for programmable metallization cell devices and structures Jun. 10, 2008
7365354 Programmable resistance memory element and method for making same Apr. 29, 2008
7365411 Resistance variable memory with temperature tolerant materials Apr. 29, 2008
7361929 Field-effect transistors with weakly coupled layered inorganic semiconductors Apr. 22, 2008
7361925 Integrated circuit having a memory including a low-k dielectric material for thermal isolation Apr. 22, 2008
7354793 Method of forming a PCRAM device incorporating a resistance-variable chalocogenide element Apr. 8, 2008
7348209 Resistance variable memory device and method of fabrication Mar. 25, 2008
7348590 Phase change memory cell with high read margin at low power operation Mar. 25, 2008
7338851 Diode/superionic conductor/polymer memory structure Mar. 4, 2008
7338857 Increasing adherence of dielectrics to phase change materials Mar. 4, 2008
7329579 Phase changeable memory cells and methods of fabricating the same Feb. 12, 2008
7323356 LnCuO(S,Se,Te)monocrystalline thin film, its manufacturing method, and optical device or electronic device using the monocrystalline thin film Jan. 29, 2008
7323734 Phase changeable memory cells Jan. 29, 2008
7314776 Method to manufacture a phase change memory Jan. 1, 2008

1 2 3 4 5










 
 
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