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Class Information
Number: 257/E31.029
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Semiconductor devices responsive or sensitive to electromagnetic radiation (e.g., infrared radiation, adapted for conversion of radiation into electrical energy or for control of electrical energy by such radiation processes, or apparatus peculiar to manufacture or treatment of such devices, or of parts thereof) (epo) > Characterized by semiconductor body (epo) > Characterized by semiconductor body material (epo) > Inorganic materials (epo) > Including, apart from doping material or other impurity, only compound other than group ii-vi, iii-v, and iv compound (epo) > Comprising only group iv-vi or ii-iv-vi chalcogenide compound (e.g., pbsnte) (epo)
Description: This subclass is indented under subclass E31.026. This subclass is substantially the same in scope as ECLA classification H01L31/032D.










Sub-classes under this class:

Class Number Class Name Patents
257/E31.03 Characterized by doping material (epo) 6


Patents under this class:
1 2 3 4 5

Patent Number Title Of Patent Date Issued
8039392 Resistor random access memory cell with reduced active area and reduced contact areas Oct. 18, 2011
8026125 Phase change RAM device and method for fabricating the same Sep. 27, 2011
8022384 Optimized solid electrolyte for programmable metallization cell devices and structures Sep. 20, 2011
8008644 Phase-change memory cell having two insulated regions Aug. 30, 2011
7985959 Self-aligned vertical bipolar junction transistor for phase change memories Jul. 26, 2011
7985961 Resistive random access memory device Jul. 26, 2011
7977674 Phase change memory device and method of fabricating the same Jul. 12, 2011
7956343 Nonvolatile memory devices and method of manufacturing the same Jun. 7, 2011
7943921 Phase change current density control structure May. 17, 2011
7936044 Non-volatile memory devices and methods of fabricating the same May. 3, 2011
7936593 Reducing drift in chalcogenide devices May. 3, 2011
7932101 Thermally contained/insulated phase change memory device and method Apr. 26, 2011
7932167 Phase change memory cell with vertical transistor Apr. 26, 2011
7932506 Fully self-aligned pore-type memory cell having diode access device Apr. 26, 2011
7928420 Phase change tip storage cell Apr. 19, 2011
7915603 Modifiable gate stack memory element Mar. 29, 2011
7910397 Small electrode for resistance variable devices Mar. 22, 2011
7897955 Programmable resistive memory cell with filament placement structure Mar. 1, 2011
7893418 Phase change memory cell having interface structures with essentially equal thermal impedances and manufacturing methods Feb. 22, 2011
7893419 Processing phase change material to improve programming speed Feb. 22, 2011
7888665 Integrated circuit including memory cell having cup-shaped electrode interface Feb. 15, 2011
7888165 Methods of forming a phase change material Feb. 15, 2011
7884343 Phase change memory cell with filled sidewall memory element and method for fabricating the same Feb. 8, 2011
7884345 Phase-change material, memory unit and method for electrically storing/reading data Feb. 8, 2011
7884348 Semiconductor device and method of manufacturing the same Feb. 8, 2011
7879643 Memory cell with memory element contacting an inverted T-shaped bottom electrode Feb. 1, 2011
7868312 Semiconductor memory device and manufacturing method thereof Jan. 11, 2011
7868311 Phase change memory element and method for forming the same Jan. 11, 2011
7851776 Phase change RAM device Dec. 14, 2010
7838326 Methods of fabricating semiconductor device including phase change layer Nov. 23, 2010
7838341 Self-aligned memory cells and method for forming Nov. 23, 2010
7833823 Programmable resistance memory element and method for making same Nov. 16, 2010
7833825 Solution-based deposition process for metal chalcogenides Nov. 16, 2010
7829930 Semiconductor device with ion movement control Nov. 9, 2010
7825396 Self-align planerized bottom electrode phase change memory and manufacturing method Nov. 2, 2010
7820997 Resistor random access memory cell with reduced active area and reduced contact areas Oct. 26, 2010
7812333 Integrated circuit including resistivity changing material having a planarized surface Oct. 12, 2010
7803657 Method of manufacturing a variable resistance structure and method of manufacturing a phase-change memory device using the same Sep. 28, 2010
7795607 Current focusing memory architecture for use in electrical probe-based memory storage Sep. 14, 2010
7795068 Method of making integrated circuit (IC) including at least one storage cell Sep. 14, 2010
7786460 Phase change memory device and manufacturing method Aug. 31, 2010
7772614 Solid electrolyte memory element and method for fabricating such a memory element Aug. 10, 2010
7767499 Method to form upward pointing p-i-n diodes having large and uniform current Aug. 3, 2010
7767568 Phase change memory device and method of fabricating the same Aug. 3, 2010
7759668 Memory device including phase-changeable material region and method of fabricating the same Jul. 20, 2010
7745809 Ultra high density phase change memory having improved emitter contacts, improved GST cell reliability and highly matched UHD GST cells using column mirco-trench strips Jun. 29, 2010
7745231 Resistive memory cell fabrication methods and devices Jun. 29, 2010
7728352 Damascene conductive line for contacting an underlying memory element Jun. 1, 2010
7714312 Phase change memory cell with high read margin at low power operation May. 11, 2010
7714314 Semiconductor device and method of manufacturing the same May. 11, 2010

1 2 3 4 5










 
 
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