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Class Information
Number: 257/E31.029
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Semiconductor devices responsive or sensitive to electromagnetic radiation (e.g., infrared radiation, adapted for conversion of radiation into electrical energy or for control of electrical energy by such radiation processes, or apparatus peculiar to manufacture or treatment of such devices, or of parts thereof) (epo) > Characterized by semiconductor body (epo) > Characterized by semiconductor body material (epo) > Inorganic materials (epo) > Including, apart from doping material or other impurity, only compound other than group ii-vi, iii-v, and iv compound (epo) > Comprising only group iv-vi or ii-iv-vi chalcogenide compound (e.g., pbsnte) (epo)
Description: This subclass is indented under subclass E31.026. This subclass is substantially the same in scope as ECLA classification H01L31/032D.
Sub-classes under this class:
Patents under this class:
| Patent Number |
Title Of Patent |
Date Issued |
| 7612359 |
Microelectronic devices using sacrificial layers and structures fabricated by same |
Nov. 3, 2009 |
| 7595218 |
Programmable resistive RAM and manufacturing method |
Sep. 29, 2009 |
| 7589344 |
Semiconductor device and method of producing the same |
Sep. 15, 2009 |
| 7589367 |
Layout structure in semiconductor memory device comprising global work lines, local work lines, global bit lines and local bit lines |
Sep. 15, 2009 |
| 7586777 |
Resistance variable memory with temperature tolerant materials |
Sep. 8, 2009 |
| 7579210 |
Planar segmented contact |
Aug. 25, 2009 |
| 7579616 |
Four-terminal programmable via-containing structure and method of fabricating same |
Aug. 25, 2009 |
| 7575950 |
Semiconductor device and a method of manufacturing the same |
Aug. 18, 2009 |
| 7569417 |
Method of forming a phase changeable material layer, a method of manufacturing a phase changeable memory unit, and a method of manufacturing a phase changeable semiconductor memory device |
Aug. 4, 2009 |
| 7560722 |
Optimized solid electrolyte for programmable metallization cell devices and structures |
Jul. 14, 2009 |
| 7528401 |
Agglomeration elimination for metal sputter deposition of chalcogenides |
May. 5, 2009 |
| 7527985 |
Method for manufacturing a resistor random access memory with reduced active area and reduced contact areas |
May. 5, 2009 |
| 7511297 |
Phase change memory device and method of fabricating the same |
Mar. 31, 2009 |
| 7494849 |
Methods for fabricating multi-terminal phase change devices |
Feb. 24, 2009 |
| 7491573 |
Phase change materials for applications that require fast switching and high endurance |
Feb. 17, 2009 |
| 7470922 |
Increasing adherence of dielectrics to phase change materials |
Dec. 30, 2008 |
| 7456420 |
Electrode for phase change memory device and method |
Nov. 25, 2008 |
| 7449711 |
Phase-change-type semiconductor memory device |
Nov. 11, 2008 |
| 7405420 |
Method and system for chalcogenide-based nanowire memory |
Jul. 29, 2008 |
| 7399655 |
Damascene conductive line for contacting an underlying memory element |
Jul. 15, 2008 |
| 7393798 |
Resistance variable memory with temperature tolerant materials |
Jul. 1, 2008 |
| 7394088 |
Thermally contained/insulated phase change memory device and method (combined) |
Jul. 1, 2008 |
| 7391050 |
Phase change memory device with thermal insulating layers |
Jun. 24, 2008 |
| 7385219 |
Optimized solid electrolyte for programmable metallization cell devices and structures |
Jun. 10, 2008 |
| 7365354 |
Programmable resistance memory element and method for making same |
Apr. 29, 2008 |
| 7365411 |
Resistance variable memory with temperature tolerant materials |
Apr. 29, 2008 |
| 7361925 |
Integrated circuit having a memory including a low-k dielectric material for thermal isolation |
Apr. 22, 2008 |
| 7361929 |
Field-effect transistors with weakly coupled layered inorganic semiconductors |
Apr. 22, 2008 |
| 7354793 |
Method of forming a PCRAM device incorporating a resistance-variable chalocogenide element |
Apr. 8, 2008 |
| 7348590 |
Phase change memory cell with high read margin at low power operation |
Mar. 25, 2008 |
| 7348209 |
Resistance variable memory device and method of fabrication |
Mar. 25, 2008 |
| 7338851 |
Diode/superionic conductor/polymer memory structure |
Mar. 4, 2008 |
| 7338857 |
Increasing adherence of dielectrics to phase change materials |
Mar. 4, 2008 |
| 7329579 |
Phase changeable memory cells and methods of fabricating the same |
Feb. 12, 2008 |
| 7323356 |
LnCuO(S,Se,Te)monocrystalline thin film, its manufacturing method, and optical device or electronic device using the monocrystalline thin film |
Jan. 29, 2008 |
| 7323734 |
Phase changeable memory cells |
Jan. 29, 2008 |
| 7314776 |
Method to manufacture a phase change memory |
Jan. 1, 2008 |
| 7307908 |
Software refreshed memory device and method |
Dec. 11, 2007 |
| 7303939 |
Electro- and electroless plating of metal in the manufacture of PCRAM devices |
Dec. 4, 2007 |
| 7282783 |
Resistance variable memory device and method of fabrication |
Oct. 16, 2007 |
| 7282387 |
Electro- and electroless plating of metal in the manufacture of PCRAM devices |
Oct. 16, 2007 |
| 7259023 |
Forming phase change memory arrays |
Aug. 21, 2007 |
| 7232703 |
Non-volatile memory and the fabrication method |
Jun. 19, 2007 |
| 7227171 |
Small area contact region, high efficiency phase change memory cell and fabrication method thereof |
Jun. 5, 2007 |
| 7214958 |
Phase change memory cell with high read margin at low power operation |
May. 8, 2007 |
| 7202493 |
Chalcogenide memory having a small active region |
Apr. 10, 2007 |
| 7190048 |
Resistance variable memory device and method of fabrication |
Mar. 13, 2007 |
| 7186999 |
Error reduction circuit for chalcogenide devices |
Mar. 6, 2007 |
| 7135727 |
I-shaped and L-shaped contact structures and their fabrication methods |
Nov. 14, 2006 |
| 7129560 |
Thermal memory cell and memory device including the thermal memory cell |
Oct. 31, 2006 |
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