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Class Information
Number: 257/E31.029
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Semiconductor devices responsive or sensitive to electromagnetic radiation (e.g., infrared radiation, adapted for conversion of radiation into electrical energy or for control of electrical energy by such radiation processes, or apparatus peculiar to manufacture or treatment of such devices, or of parts thereof) (epo) > Characterized by semiconductor body (epo) > Characterized by semiconductor body material (epo) > Inorganic materials (epo) > Including, apart from doping material or other impurity, only compound other than group ii-vi, iii-v, and iv compound (epo) > Comprising only group iv-vi or ii-iv-vi chalcogenide compound (e.g., pbsnte) (epo)
Description: This subclass is indented under subclass E31.026. This subclass is substantially the same in scope as ECLA classification H01L31/032D.

Sub-classes under this class:

Class Number Class Name Patents
257/E31.03 Characterized by doping material (epo) 6

Patents under this class:
1 2 3 4 5

Patent Number Title Of Patent Date Issued
8679914 Method of forming a chalcogenide material and methods of forming a resistive random access memory device including a chalcogenide material Mar. 25, 2014
8637847 Memory cells having a plurality of heaters Jan. 28, 2014
8633463 Depositing titanium silicon nitride films for forming phase change memories Jan. 21, 2014
8623694 Methods of forming fast ion conductors and memory devices comprising diffused metal ions Jan. 7, 2014
8617916 Chemical bath deposition method for fabrication of semiconductor films Dec. 31, 2013
8614114 Process for producing light absorbing layer in CIS based thin-film solar cell Dec. 24, 2013
8597974 Confined resistance variable memory cells and methods Dec. 3, 2013
8586957 Three-terminal cascade switch for controlling static power consumption in integrated circuits Nov. 19, 2013
8546783 Semiconductor device and method of manufacturing the same Oct. 1, 2013
8546784 Phase change current density control structure Oct. 1, 2013
8530878 Memory arrays and methods of forming memory cells Sep. 10, 2013
8525144 Programmable via devices Sep. 3, 2013
8525244 Germanium compound, semiconductor device fabricated using the same, and methods of forming the same Sep. 3, 2013
8513637 4F2 self align fin bottom electrodes FET drive phase change memory Aug. 20, 2013
8501526 Synthesizing photovoltaic thin films of high quality copper-zinc-tin alloy with at least one chalcogen species Aug. 6, 2013
8481359 Methods of forming a phase change material Jul. 9, 2013
8445887 Nonvolatile programmable switch device using phase-change memory device and method of manufacturing the same May. 21, 2013
8440498 Thin-film devices formed from solid particles May. 14, 2013
8440535 Forming a phase change memory with an ovonic threshold switch May. 14, 2013
8415651 Phase change memory cell having top and bottom sidewall contacts Apr. 9, 2013
8395192 Single mask adder phase change memory element Mar. 12, 2013
8389967 Programmable via devices Mar. 5, 2013
8344350 Phase change device with offset contact Jan. 1, 2013
8330136 High concentration nitrogen-containing germanium telluride based memory devices and processes of making Dec. 11, 2012
8330138 Electronic device comprising a convertible structure, and a method of manufacturing an electronic device Dec. 11, 2012
8278639 High integration phase change memory device having reduced thickness phase change layer and fabrication method thereof Oct. 2, 2012
8269205 Information recording and reproducing device Sep. 18, 2012
8252622 Phase change current density control structure Aug. 28, 2012
8252644 Method for forming a nonvolatile memory cell comprising a reduced height vertical diode Aug. 28, 2012
8237149 Non-volatile memory device having bottom electrode Aug. 7, 2012
8227785 Chalcogenide containing semiconductors with chalcogenide gradient Jul. 24, 2012
8222627 Process for manufacturing a copper compatible chalcogenide phase change memory element and corresponding phase change memory element Jul. 17, 2012
8212246 N-type doping in metal oxides and metal chalcogenides by electrochemical methods Jul. 3, 2012
8207009 Methods of temporally varying the laser intensity during scribing a photovoltaic device Jun. 26, 2012
8207518 Information recording and reproducing device Jun. 26, 2012
8188562 Multi-layer N-type stack for cadmium telluride based thin film photovoltaic devices and methods of making May. 29, 2012
8187946 Manufacturing a phase change memory device having a ring heater May. 29, 2012
8168468 Method of making a semiconductor device including a bridgeable material May. 1, 2012
8164949 Reducing drift in chalcogenide devices Apr. 24, 2012
8148710 Phase-change memory device using a variable resistance structure Apr. 3, 2012
8138490 Variable resistance non-volatile memory cells and methods of fabricating same Mar. 20, 2012
8134138 Programmable metallization memory cell with planarized silver electrode Mar. 13, 2012
8134140 Programmable metallization cell structure including an integrated diode, device including the structure, and method of forming same Mar. 13, 2012
8124952 Programmable resistive memory cell with filament placement structure Feb. 28, 2012
8097872 Modifiable gate stack memory element Jan. 17, 2012
8071396 Embedded phase-change memory and method of fabricating the same Dec. 6, 2011
8071419 Thin-film devices formed from solid particles Dec. 6, 2011
8067761 Self-aligned memory cells and method for forming Nov. 29, 2011
8058702 Phase change memory cell Nov. 15, 2011
8039298 Phase changeable memory cell array region and method of forming the same Oct. 18, 2011

1 2 3 4 5

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