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Class Information
Number: 257/E31.025
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Semiconductor devices responsive or sensitive to electromagnetic radiation (e.g., infrared radiation, adapted for conversion of radiation into electrical energy or for control of electrical energy by such radiation processes, or apparatus peculiar to manufacture or treatment of such devices, or of parts thereof) (epo) > Characterized by semiconductor body (epo) > Characterized by semiconductor body material (epo) > Inorganic materials (epo) > Including, apart from doping material or other impurity, only group iv compound (e.g., sic) (epo) > Characterized by doping material (epo)
Description: This subclass is indented under subclass E31.023. This subclass is substantially the same in scope as ECLA classification H01L31/0312C.

Patents under this class:

Patent Number Title Of Patent Date Issued
6459107 Photodetector having a mixed crystal layer of SiGeC Oct. 1, 2002

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