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Class Information
Number: 257/E31.024
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Semiconductor devices responsive or sensitive to electromagnetic radiation (e.g., infrared radiation, adapted for conversion of radiation into electrical energy or for control of electrical energy by such radiation processes, or apparatus peculiar to manufacture or treatment of such devices, or of parts thereof) (epo) > Characterized by semiconductor body (epo) > Characterized by semiconductor body material (epo) > Inorganic materials (epo) > Including, apart from doping material or other impurity, only group iv compound (e.g., sic) (epo) > For device having potential or surface barrier (epo)
Description: This subclass is indented under subclass E31.023. This subclass is substantially the same in scope as ECLA classification H01L31/0312B.










Patents under this class:

Patent Number Title Of Patent Date Issued
8709857 Intrinsic absorber layer for photovoltaic cells Apr. 29, 2014
8633556 Solid-state imaging device and method for making the same, and manufacturing substrate for solid-state imaging device Jan. 21, 2014
8617916 Chemical bath deposition method for fabrication of semiconductor films Dec. 31, 2013
8178382 Suspended germanium photodetector for silicon waveguide May. 15, 2012
8178936 Double-side mountable MEMS package May. 15, 2012
8053785 Tunneling field effect transistor switch device Nov. 8, 2011
7902620 Suspended germanium photodetector for silicon waveguide Mar. 8, 2011
7843021 Double-side mountable MEMS package Nov. 30, 2010
6784466 Si/SiGe optoelectronic integrated circuits Aug. 31, 2004
6459107 Photodetector having a mixed crystal layer of SiGeC Oct. 1, 2002
5581087 Radiation detector Dec. 3, 1996
5319220 Silicon carbide semiconductor device Jun. 7, 1994
5289017 Solid state imaging device having silicon carbide crystal layer Feb. 22, 1994
5093576 High sensitivity ultraviolet radiation detector Mar. 3, 1992
4985742 High temperature semiconductor devices having at least one gallium nitride layer Jan. 15, 1991
4939561 Infrared sensor Jul. 3, 1990
4885614 Semiconductor device with crystalline silicon-germanium-carbon alloy Dec. 5, 1989
4831428 Infrared ray detection device May. 16, 1989
4524237 Increased voltage photovoltaic cell Jun. 18, 1985











 
 
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