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Class Information
Number: 257/E31.022
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Semiconductor devices responsive or sensitive to electromagnetic radiation (e.g., infrared radiation, adapted for conversion of radiation into electrical energy or for control of electrical energy by such radiation processes, or apparatus peculiar to manufacture or treatment of such devices, or of parts thereof) (epo) > Characterized by semiconductor body (epo) > Characterized by semiconductor body material (epo) > Inorganic materials (epo) > Including, apart from doping material or other impurity, only group iii-v compound (epo) > Including ternary or quaternary compound (epo)
Description: This subclass is indented under subclass E31.019. This subclass is substantially the same in scope as ECLA classification H01L31/0304C.










Patents under this class:
1 2 3

Patent Number Title Of Patent Date Issued
8680641 System and method of planar processing of semiconductors into detector arrays Mar. 25, 2014
8664023 Deposition method, deposition film, and method for producing organic electroluminescence display device Mar. 4, 2014
8575471 Lattice matched semiconductor growth on crystalline metallic substrates Nov. 5, 2013
8519407 Organic light-emitting display having light blocking layer formed over pixel defining layer Aug. 27, 2013
8450720 Frontside-illuminated inverted quantum well infrared photodetector devices May. 28, 2013
8338200 Frontside-illuminated inverted quantum well infrared photodetector devices and methods of fabricating the same Dec. 25, 2012
8242538 Method and device for growing pseudomorphic A1InAsSb on InAs Aug. 14, 2012
8129615 Multiband semiconductor compositions for photovoltaic devices Mar. 6, 2012
8039369 Semiconductor light-emitting element and method of producing the same Oct. 18, 2011
7977141 Solid-state image pickup device and method of manufacturing the same Jul. 12, 2011
7834379 Avalanche photodiode with edge breakdown suppression Nov. 16, 2010
7776636 Method for significant reduction of dislocations for a very high A1 composition A1GaN layer Aug. 17, 2010
7772666 CMOS image sensor and method for manufacturing the same Aug. 10, 2010
7696593 PIN-type photo detecting element with three semiconductor layers, and window semiconductor layer having controlled thickness Apr. 13, 2010
7659536 High performance hyperspectral detectors using photon controlling cavities Feb. 9, 2010
7605406 Rear-illuminated-type photodiode array Oct. 20, 2009
7601985 Semiconductor light-emitting device Oct. 13, 2009
7372068 QWIP with electron launcher for reducing dielectric relaxation effect in low background conditions May. 13, 2008
7332751 Rear-illuminated-type photodiode array Feb. 19, 2008
7329895 Dual wavelength detector Feb. 12, 2008
7307290 Compound semiconductor wafer and manufacturing method thereof Dec. 11, 2007
7307291 Gallium-nitride based ultraviolet photo detector Dec. 11, 2007
7154163 Epitaxial structure of gallium nitride series semiconductor device utilizing two buffer layers Dec. 26, 2006
7061955 Heterogeneous composite semiconductor structures for enhanced oxide and air aperture formation for semiconductor lasers and detectors and method of manufacture Jun. 13, 2006
6942731 Method for improving the efficiency of epitaxially produced quantum dot semiconductor components Sep. 13, 2005
6906326 Quantum dot infrared photodetector focal plane array Jun. 14, 2005
6894323 Group III nitride semiconductor device and its method of manufacture May. 17, 2005
6787821 Compound semiconductor device having a mesfet that raises the maximum mutual conductance and changes the mutual conductance Sep. 7, 2004
6743657 Method for combined fabrication of indium gallium arsenide/indium phosphide avalanche photodiodes and P-I-N photodiodes Jun. 1, 2004
6657234 Nitride semiconductor device Dec. 2, 2003
6624449 Three terminal edge illuminated epilayer waveguide phototransistor Sep. 23, 2003
6623998 Method for manufacturing group III nitride compound semiconductor device Sep. 23, 2003
6603184 Double heterostructure photodiode with graded minority-carrier blocking structures Aug. 5, 2003
6566724 Low dark current photodiode May. 20, 2003
6555890 Method for combined fabrication of indium gallium arsenide/indium phosphide avalanche photodiodes and p-i-n photodiodes Apr. 29, 2003
RE38072 Fabrication method for AlGaInNPAsSb based devices Apr. 8, 2003
6531719 Group III nitride compound semiconductor device Mar. 11, 2003
6528827 MSM device and method of manufacturing same Mar. 4, 2003
6504091 Photoelectric converting device Jan. 7, 2003
6495380 Epitaxially grown avalanche photodiode Dec. 17, 2002
6445020 Semiconductor light-receiving device Sep. 3, 2002
6420728 Multi-spectral quantum well infrared photodetectors Jul. 16, 2002
6407439 Programmable multi-wavelength detector array Jun. 18, 2002
6376826 Polarity-independent optical receiver and method for fabricating same Apr. 23, 2002
6369436 Semiconductor wavelength demultiplexer Apr. 9, 2002
6351000 Semiconductor having a heterojunction formed between a plurality of semiconductor layers Feb. 26, 2002
6350998 Ultraspeed low-voltage drive avalanche multiplication type semiconductor photodetector Feb. 26, 2002
6350982 Inducement and detection of latch-up using a laser scanning microscope Feb. 26, 2002
6329668 Quantum dots for optoelecronic devices Dec. 11, 2001
6294414 Method of fabricating heterointerface devices having diffused junctions Sep. 25, 2001

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