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Class Information
Number: 257/E31.021
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Semiconductor devices responsive or sensitive to electromagnetic radiation (e.g., infrared radiation, adapted for conversion of radiation into electrical energy or for control of electrical energy by such radiation processes, or apparatus peculiar to manufacture or treatment of such devices, or of parts thereof) (epo) > Characterized by semiconductor body (epo) > Characterized by semiconductor body material (epo) > Inorganic materials (epo) > Including, apart from doping material or other impurity, only group iii-v compound (epo) > For device having potential or surface barrier (epo) > Characterized by doping material gaalas, ingaas, ingaasp (epo)
Description: This subclass is indented under subclass E31.02. This subclass is substantially the same in scope as ECLA classification H01L31/0304B2.










Patents under this class:
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Patent Number Title Of Patent Date Issued
8624104 Heterojunction III-V solar cell performance Jan. 7, 2014
8530995 High operating temperature split-off band infrared detector with double and/or graded barrier Sep. 10, 2013
8368162 Laser power converter for data detection and optical-to-electrical power generation Feb. 5, 2013
8188559 Light-receiving element and light-receiving element array May. 29, 2012
7759148 Method for manufacturing semiconductor optical device Jul. 20, 2010
7675130 Waveguide photodetector Mar. 9, 2010
7307291 Gallium-nitride based ultraviolet photo detector Dec. 11, 2007
7253432 Heterojunction far infrared photodetector Aug. 7, 2007
7170096 Antimonide-based optical devices Jan. 30, 2007
6936868 Sequential mesa avalanche photodiode capable of realizing high sensitization and method of manufacturing the same Aug. 30, 2005
6815736 Isoelectronic co-doping Nov. 9, 2004
6791124 Sequential mesa avalanche photodiode capable of realizing high sensitization and method of manufacturing the same Sep. 14, 2004
6657234 Nitride semiconductor device Dec. 2, 2003
6623998 Method for manufacturing group III nitride compound semiconductor device Sep. 23, 2003
6531719 Group III nitride compound semiconductor device Mar. 11, 2003
6262465 Highly-doped P-type contact for high-speed, front-side illuminated photodiode Jul. 17, 2001
6218269 Process for producing III-V nitride pn junctions and p-i-n junctions Apr. 17, 2001
6057507 Coarse grain polycrystalline gallium antimonide thermophotovoltaic cell May. 2, 2000
H1835 Bistable photoconductive switches particularly suited for frequency-agile, radio-frequency sources Feb. 1, 2000
6005259 InAs/GaSb superlattice structure infrared detector fabricated by organometallic vapor phase epitaxy Dec. 21, 1999
5959239 Thermovoltaic semiconductor device including a plasma filter Sep. 28, 1999
5944913 High-efficiency solar cell and method for fabrication Aug. 31, 1999
5923953 Process for forming a high gain, wide bandgap gallium nitride photoconductor having particular sensitivity to ultraviolet radiation Jul. 13, 1999
5911839 High efficiency GaInP NIP solar cells Jun. 15, 1999
5864166 Bistable photoconductive switches particularly suited for frequency-agile, radio-frequency sources Jan. 26, 1999
5800630 Tandem solar cell with indium phosphide tunnel junction Sep. 1, 1998
5747864 Light receiving element and a method of fabricating the same May. 5, 1998
H1717 Bistable photoconductive switches particularly suited for frequency-agile, radio-frequency sources Apr. 7, 1998
5598014 High gain ultraviolet photoconductor based on wide bandgap nitrides Jan. 28, 1997
5506186 Method of manufacturing an optoelectronic device Apr. 9, 1996
5407491 Tandem solar cell with improved tunnel junction Apr. 18, 1995
5389158 Low bandgap photovoltaic cell with inherent bypass diode Feb. 14, 1995
5374589 Process of making a bistable photoconductive component Dec. 20, 1994
5343055 Avalanche photodiode structure with Mg doping and method Aug. 30, 1994
5268327 Epitaxial compositions Dec. 7, 1993
5233209 Guard ring structure with graded Be implantation Aug. 3, 1993
5217539 III-V solar cells and doping processes Jun. 8, 1993
5103280 Dual active layer photoconductor Apr. 7, 1992
5024706 Pin heterojunction photovoltaic elements with polycrystal AlP(H,F) semiconductor film Jun. 18, 1991
5007971 Pin heterojunction photovoltaic elements with polycrystal BP(H,F) semiconductor film Apr. 16, 1991
5002618 Pin heterojunction photovoltaic elements with polycrystal BAs(H,F) semiconductor film Mar. 26, 1991
5002617 Pin heterojunction photovoltaic elements with polycrystal AlAs(H,F) semiconductor film Mar. 26, 1991
5001335 Semiconductor photodetector device and method of manufacturing the same Mar. 19, 1991
4984032 Semiconductor photodiode Jan. 8, 1991
4916303 Electron beam controlled bulk semiconductor switch with cathodoluminescent electron activation Apr. 10, 1990
4887138 P-I-N photodetector having a burried junction Dec. 12, 1989
4831248 Electron beam controlled bulk semiconductor switch with cathodoluminescent electron activation May. 16, 1989
4825061 Optically controlled bulk semiconductor switch not requiring radiation to sustain conduction Apr. 25, 1989
4797371 Method for forming an impurity region in semiconductor devices by out-diffusion Jan. 10, 1989
4794439 Rear entry photodiode with three contacts Dec. 27, 1988

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