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Class Information
Number: 257/E31.02
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Semiconductor devices responsive or sensitive to electromagnetic radiation (e.g., infrared radiation, adapted for conversion of radiation into electrical energy or for control of electrical energy by such radiation processes, or apparatus peculiar to manufacture or treatment of such devices, or of parts thereof) (epo) > Characterized by semiconductor body (epo) > Characterized by semiconductor body material (epo) > Inorganic materials (epo) > Including, apart from doping material or other impurity, only group iii-v compound (epo) > For device having potential or surface barrier (epo)
Description: This subclass is indented under subclass E31.019. This subclass is substantially the same in scope as ECLA classification H01L31/0304B.










Sub-classes under this class:

Class Number Class Name Patents
257/E31.021 Characterized by doping material gaalas, ingaas, ingaasp (epo) 59


Patents under this class:

Patent Number Title Of Patent Date Issued
8623692 Method for manufacturing solar cell including etching Jan. 7, 2014
8617916 Chemical bath deposition method for fabrication of semiconductor films Dec. 31, 2013
8530995 High operating temperature split-off band infrared detector with double and/or graded barrier Sep. 10, 2013
8399910 Sub-pixel NBN detector Mar. 19, 2013
8362520 Sub-pixel nBn detector Jan. 29, 2013
8278133 Method for joining a film onto a substrate Oct. 2, 2012
8044435 Sub-pixel nBn detector Oct. 25, 2011
8022390 Lateral conduction infrared photodetector Sep. 20, 2011
7648851 Method of fabricating backside illuminated image sensor Jan. 19, 2010
7235419 Method of making a memory cell Jun. 26, 2007
6894322 Back illuminated photodiodes May. 17, 2005
6890809 Method for fabricating a P-N heterojunction device utilizing HVPE grown III-V compound layers and resultant device May. 10, 2005
6849862 III-V compound semiconductor device with an AlxByInzGa1-x-y-zN1-a-bPaAsb non-continuous quantum dot layer Feb. 1, 2005
6764871 Method for fabricating a nitride semiconductor device Jul. 20, 2004
6734515 Semiconductor light receiving element May. 11, 2004
6599133 Method for growing III-V compound semiconductor structures with an integral non-continuous quantum dot layer utilizing HVPE techniques Jul. 29, 2003
6593589 Semiconductor nitride structures Jul. 15, 2003
6559467 P-n heterojunction-based structures utilizing HVPE grown III-V compound layers May. 6, 2003
6559038 Method for growing p-n heterojunction-based structures utilizing HVPE techniques May. 6, 2003
6555452 Method for growing p-type III-V compound material utilizing HVPE techniques Apr. 29, 2003
6511858 Method for fabricating semiconductor device Jan. 28, 2003
6479839 III-V compounds semiconductor device with an AlxByInzGa1-x-y-zN non continuous quantum dot layer Nov. 12, 2002
6476420 P-N homojunction-based structures utilizing HVPE growth III-V compound layers Nov. 5, 2002
6472300 Method for growing p-n homojunction-based structures utilizing HVPE techniques Oct. 29, 2002
6326654 Hybrid ultraviolet detector Dec. 4, 2001
6316715 Multijunction photovoltaic cell with thin 1st (top) subcell and thick 2nd subcell of same or similar semiconductor material Nov. 13, 2001
6285084 Semiconductor device Sep. 4, 2001
6104046 Dual-band infrared sensing material array and focal plane array Aug. 15, 2000
5939733 Compound semiconductor device having a group III-V compound semiconductor layer containing therein T1 and As Aug. 17, 1999
5847397 Photodetectors using III-V nitrides Dec. 8, 1998
5726462 Semiconductor structures having electrically insulating and conducting portions formed from an AlSb-alloy layer Mar. 10, 1998
5677538 Photodetectors using III-V nitrides Oct. 14, 1997
5449943 Visible and infrared indium antimonide (INSB) photodetector with non-flashing light receiving surface Sep. 12, 1995
5024706 Pin heterojunction photovoltaic elements with polycrystal AlP(H,F) semiconductor film Jun. 18, 1991
5007971 Pin heterojunction photovoltaic elements with polycrystal BP(H,F) semiconductor film Apr. 16, 1991
5002618 Pin heterojunction photovoltaic elements with polycrystal BAs(H,F) semiconductor film Mar. 26, 1991
4985742 High temperature semiconductor devices having at least one gallium nitride layer Jan. 15, 1991
4694318 Sawtooth photodetector Sep. 15, 1987
4657603 Method for the manufacture of gallium arsenide thin film solar cells Apr. 14, 1987
4618024 Moving seismic source system for use in water-covered areas Oct. 21, 1986
4477964 Method of making p-i-n photodiodes Oct. 23, 1984
4450460 Magnetic-infrared-emitting diode May. 22, 1984
4443809 p-i-n Photodiodes Apr. 17, 1984
4286277 Planar indium antimonide diode array and method of manufacture Aug. 25, 1981
3976872 Gallium phosphide photodetector having an as-grown surface and producing an output from radiation having energies of 2.2 eV to 3.8 eV Aug. 24, 1976











 
 
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