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Class Information
Number: 257/E31.019
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Semiconductor devices responsive or sensitive to electromagnetic radiation (e.g., infrared radiation, adapted for conversion of radiation into electrical energy or for control of electrical energy by such radiation processes, or apparatus peculiar to manufacture or treatment of such devices, or of parts thereof) (epo) > Characterized by semiconductor body (epo) > Characterized by semiconductor body material (epo) > Inorganic materials (epo) > Including, apart from doping material or other impurity, only group iii-v compound (epo)
Description: This subclass is indented under subclass E31.004. This subclass is substantially the same in scope as ECLA classification H01L31/0304.










Sub-classes under this class:

Class Number Class Name Patents
257/E31.02 For device having potential or surface barrier (epo) 45
257/E31.022 Including ternary or quaternary compound (epo) 102


Patents under this class:

Patent Number Title Of Patent Date Issued
8674406 Extended wavelength digital alloy NBN detector Mar. 18, 2014
8647901 Method for forming a nitride semiconductor layer and method for separating the nitride semiconductor layer from the substrate Feb. 11, 2014
8604577 Hybrid silicon vertical cavity laser with in-plane coupling Dec. 10, 2013
8592677 Substrate, solar cell including the substrate, and method of manufacturing the same Nov. 26, 2013
8530995 High operating temperature split-off band infrared detector with double and/or graded barrier Sep. 10, 2013
8482032 Chamfered freestanding nitride semiconductor wafer and method of chamfering nitride semiconductor wafer Jul. 9, 2013
8471364 Group III nitride substrate, semiconductor device comprising the same, and method for producing surface-treated group III nitride substrate Jun. 25, 2013
8450773 Strain-compensated infrared photodetector and photodetector array May. 28, 2013
8420431 Solar cell Apr. 16, 2013
8409892 Method of selective photo-enhanced wet oxidation for nitride layer regrowth on substrates Apr. 2, 2013
8390086 Solar cell employing a nanowire Mar. 5, 2013
8368117 III-nitride materials including low dislocation densities and methods associated with the same Feb. 5, 2013
8324659 InGaAsSbN photodiode arrays Dec. 4, 2012
8309945 Programmable metallization memory cell with planarized silver electrode Nov. 13, 2012
8120059 Nitride semiconductor substrate and method of fabricating the same Feb. 21, 2012
8120061 Light receiving device Feb. 21, 2012
8084281 Semiconductor substrate, electronic device, optical device, and production methods therefor Dec. 27, 2011
8080821 Thyristor radiation detector array and applications thereof Dec. 20, 2011
8022438 Chamfered freestanding nitride semiconductor wafer and method of chamfering nitride semiconductor wafer Sep. 20, 2011
8022390 Lateral conduction infrared photodetector Sep. 20, 2011
8003434 Reduced dark current photodetector Aug. 23, 2011
7968909 Reconditioned substrates for fabricating compound material wafers Jun. 28, 2011
7943964 Al.sub.xGa.sub.yIn.sub.1-x-yN crystal substrate, semiconductor device, and method of manufacturing the same May. 17, 2011
7919831 Nitride semiconductor device having oxygen-doped N-type gallium nitride freestanding single crystal substrate Apr. 5, 2011
7915639 InGaAsSbN photodiode arrays Mar. 29, 2011
7893460 Semiconductor light detecting element including first and second multilayer light reflective structures sandwiching and contacting a light absorptive layer Feb. 22, 2011
7855400 Semiconductor light detecting element and method for manufacturing the semiconductor light detecting element Dec. 21, 2010
7834380 Field effect transistor and method for fabricating the same Nov. 16, 2010
7800147 CMOS image sensor with reduced dark current Sep. 21, 2010
7696593 PIN-type photo detecting element with three semiconductor layers, and window semiconductor layer having controlled thickness Apr. 13, 2010
7687827 III-nitride materials including low dislocation densities and methods associated with the same Mar. 30, 2010
7667298 Oxygen-doped n-type gallium nitride freestanding single crystal substrate Feb. 23, 2010
7601985 Semiconductor light-emitting device Oct. 13, 2009
7557368 Semiconductor photodetector Jul. 7, 2009
7498645 Extreme ultraviolet (EUV) detectors based upon aluminum nitride (ALN) wide bandgap semiconductors Mar. 3, 2009
7485503 Dielectric interface for group III-V semiconductor device Feb. 3, 2009
7470970 Oxygen-doped n-type gallium nitride freestanding single crystal substrate Dec. 30, 2008
7436045 Gallium nitride-based semiconductor device Oct. 14, 2008
7196399 Epitaxially grown nitride-based compound semiconductor crystal substrate structure with low dislocation density Mar. 27, 2007
7132677 Super bright light emitting diode of nanorod array structure having InGaN quantum well and method for manufacturing the same Nov. 7, 2006
6870207 III-V charge coupled device suitable for visible, near and far infra-red detection Mar. 22, 2005
6838653 Shared photodetector pixel image sensor Jan. 4, 2005
6806508 Homoepitaxial gallium nitride based photodetector and method of producing Oct. 19, 2004
6635559 Formation of insulating aluminum oxide in semiconductor substrates Oct. 21, 2003
6552322 Shared photodetector pixel image sensor Apr. 22, 2003
6350982 Inducement and detection of latch-up using a laser scanning microscope Feb. 26, 2002
6326649 Pin photodiode having a wide bandwidth Dec. 4, 2001
5920409 Optoelectronic devices using persistent photoconductivity Jul. 6, 1999
5497029 Tin-indium antimonide infrared detector Mar. 5, 1996











 
 
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