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Class Information
Number: 257/E31.018
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Semiconductor devices responsive or sensitive to electromagnetic radiation (e.g., infrared radiation, adapted for conversion of radiation into electrical energy or for control of electrical energy by such radiation processes, or apparatus peculiar to manufacture or treatment of such devices, or of parts thereof) (epo) > Characterized by semiconductor body (epo) > Characterized by semiconductor body material (epo) > Inorganic materials (epo) > Including, apart from doping material or other impurity, only group ii-vi compound (e.g., cds, zns, hgcdte) (epo) > Including ternary compound (e.g., hgcdte) (epo)
Description: This subclass is indented under subclass E31.015. This subclass is substantially the same in scope as ECLA classification H01L31/0296C.










Patents under this class:
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Patent Number Title Of Patent Date Issued
8541256 Method of cadmium molecular beam based anneals for manufacture of HgCdTe photodiode arrays Sep. 24, 2013
8368162 Laser power converter for data detection and optical-to-electrical power generation Feb. 5, 2013
8129615 Multiband semiconductor compositions for photovoltaic devices Mar. 6, 2012
8125043 Photodetector element Feb. 28, 2012
8044476 Wide range radiation detector and manufacturing method Oct. 25, 2011
7687871 Reduced dark current photodetector Mar. 30, 2010
7459730 Separate absorption and detection diode for VLWIR Dec. 2, 2008
7001849 Surface treatment and protection method for cadmium zinc telluride crystals Feb. 21, 2006
6858876 Semiconductor diode device Feb. 22, 2005
6724018 Zn1-xMgxSySe1-y pin-photodiode and Zn1-xMgxSySe1-y avalanche-photodiode Apr. 20, 2004
6649915 Ionizing radiation detector Nov. 18, 2003
6168967 Reduction of surface leakage current by surface passivation of CdZn Te and other materials using hyperthermal oxygen atoms Jan. 2, 2001
6133570 Semiconductor photovoltaic diffractive resonant optical cavity infrared detector Oct. 17, 2000
6114738 Intrinsic p-type HgCdTe using CdTe capping layer Sep. 5, 2000
6049116 Two-color infrared detector and fabrication method thereof Apr. 11, 2000
6043548 Semiconductor device with stabilized junction Mar. 28, 2000
6030853 Method of producing intrinsic p-type HgCdTe using CdTe capping layer Feb. 29, 2000
5892227 Radiation detection system and processes for preparing the same Apr. 6, 1999
5880510 Graded layer passivation of group II-VI infrared photodetectors Mar. 9, 1999
5462882 Masked radiant anneal diffusion method Oct. 31, 1995
5420445 Aluminum-masked and radiantly-annealed group II-IV diffused region May. 30, 1995
5412242 Semiconductor device with p-n junction based on dopant profile in equilibrium with internal electric field created by this junction May. 2, 1995
5345093 Graded bandgap semiconductor device for real-time imaging Sep. 6, 1994
5291056 Electronic switch comprising a photosensitive semiconductor Mar. 1, 1994
5248884 Infrared detectors Sep. 28, 1993
5241196 Photoresponsive device including composition grading and recessed contacts for trapping minority carriers Aug. 31, 1993
5189297 Planar double-layer heterojunction HgCdTe photodiodes and methods for fabricating same Feb. 23, 1993
5182217 Method of fabricating a trapping-mode Jan. 26, 1993
5149957 Semiconductor-to-metal optical switch for power limitation in the infrared Sep. 22, 1992
5112410 Cadmium zinc sulfide by solution growth May. 12, 1992
5113076 Two terminal multi-band infrared radiation detector May. 12, 1992
5079610 Structure and method of fabricating a trapping-mode Jan. 7, 1992
5068524 Multiple heterostructure photodetector Nov. 26, 1991
5049962 Control of optical crosstalk between adjacent photodetecting regions Sep. 17, 1991
5045897 Quaternary II-VI materials for photonics Sep. 3, 1991
5028488 Functional ZnSe.sub.1-x Te.sub.x :H deposited film Jul. 2, 1991
5008726 PIN junction photovoltaic element containing Zn, Se, Te, H in an amount of 1 to 4 atomic % Apr. 16, 1991
5004698 Method of making photodetector with P layer covered by N layer Apr. 2, 1991
4999694 Photodiode Mar. 12, 1991
4973935 Infrared detector Nov. 27, 1990
4972244 Photodiode and photodiode array on a II-VI material and processes for the production thereof Nov. 20, 1990
4961098 Heterojunction photodiode array Oct. 2, 1990
4959106 Photovoltaic element with a semiconductor layer comprising non-single crystal material containing at least ZN, SE and H in an amount of 1 to 4 atomic % Sep. 25, 1990
4952811 Field induced gap infrared detector Aug. 28, 1990
4920394 Photo-sensing device with S-shaped response curve Apr. 24, 1990
4914495 Photodetector with player covered by N layer Apr. 3, 1990
4888062 Pin junction photovoltaic element having I-type semiconductor layer comprising non-single crystal material containing at least Zn, Se and H in an amount of 1 to 4 atomic % Dec. 19, 1989
4828875 Process for the production of sintered films of Cd.sub.1-x Zn.sub.x S May. 9, 1989
4818565 Method to stabilize metal contacts on mercury-cadmium-telluride alloys Apr. 4, 1989
4801990 HgCdTe avalanche photodiode Jan. 31, 1989

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