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Class Information
Number: 257/E31.017
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Semiconductor devices responsive or sensitive to electromagnetic radiation (e.g., infrared radiation, adapted for conversion of radiation into electrical energy or for control of electrical energy by such radiation processes, or apparatus peculiar to manufacture or treatment of such devices, or of parts thereof) (epo) > Characterized by semiconductor body (epo) > Characterized by semiconductor body material (epo) > Inorganic materials (epo) > Including, apart from doping material or other impurity, only group ii-vi compound (e.g., cds, zns, hgcdte) (epo) > For device having potential or surface barrier (epo) > Characterized by doping material (epo)
Description: This subclass is indented under subclass E31.016. This subclass is substantially the same in scope as ECLA classification H01L31/0296B2.










Patents under this class:

Patent Number Title Of Patent Date Issued
8659107 Radiation receiver and method of producing a radiation receiver Feb. 25, 2014
7727865 Method for controlling conductivity of Ga.sub.2O.sub.3single crystal Jun. 1, 2010
7033435 Process for preparing p-n junctions having a p-type ZnO film Apr. 25, 2006
6724018 Zn1-xMgxSySe1-y pin-photodiode and Zn1-xMgxSySe1-y avalanche-photodiode Apr. 20, 2004
6610141 Zinc oxide films containing p-type dopant and process for preparing same Aug. 26, 2003
6569548 Transparent conductive film of zinc oxide May. 27, 2003
6410162 Zinc oxide films containing P-type dopant and process for preparing same Jun. 25, 2002
6342313 Oxide films and process for preparing same Jan. 29, 2002
6043548 Semiconductor device with stabilized junction Mar. 28, 2000
5909632 Use of separate ZnTe interface layers to form OHMIC contacts to p-CdTe films Jun. 1, 1999
5535699 Method of making II-VI semiconductor infrared light detector Jul. 16, 1996
5446286 Ultra-fast detectors using doped nanocrystal insulators Aug. 29, 1995
5412242 Semiconductor device with p-n junction based on dopant profile in equilibrium with internal electric field created by this junction May. 2, 1995
5261968 Photovoltaic cell and method Nov. 16, 1993
5234842 Method of producing p-typed CdS Aug. 10, 1993
5150191 P-type II-VI compound semiconductor doped Sep. 22, 1992
5008726 PIN junction photovoltaic element containing Zn, Se, Te, H in an amount of 1 to 4 atomic % Apr. 16, 1991
4959106 Photovoltaic element with a semiconductor layer comprising non-single crystal material containing at least ZN, SE and H in an amount of 1 to 4 atomic % Sep. 25, 1990
4950615 Method and making group IIB metal - telluride films and solar cells Aug. 21, 1990
4926229 Pin junction photovoltaic element with P or N-type semiconductor layer comprising non-single crystal material containing Zn, Se, H in an amount of 1 to 4 atomic % and a dopant and I-type semic May. 15, 1990
4920394 Photo-sensing device with S-shaped response curve Apr. 24, 1990
4916303 Electron beam controlled bulk semiconductor switch with cathodoluminescent electron activation Apr. 10, 1990
4888062 Pin junction photovoltaic element having I-type semiconductor layer comprising non-single crystal material containing at least Zn, Se and H in an amount of 1 to 4 atomic % Dec. 19, 1989
4851302 Functional ZnSe:H deposited films Jul. 25, 1989
4831248 Electron beam controlled bulk semiconductor switch with cathodoluminescent electron activation May. 16, 1989
4825061 Optically controlled bulk semiconductor switch not requiring radiation to sustain conduction Apr. 25, 1989
4495375 MIS or SIS Solar cells Jan. 22, 1985
4229237 Method of fabrication of semiconductor components having optoelectronic conversion properties Oct. 21, 1980
4105479 Preparation of halogen doped mercury cadmium telluride Aug. 8, 1978
4105472 Preparation of silicon doped mercury cadmium telluride Aug. 8, 1978
4089714 Doping mercury cadmium telluride with aluminum or silicon May. 16, 1978
4087294 Lithium doped mercury cadmium telluride May. 2, 1978
4087293 Silicon as donor dopant in Hg.sub.1-x Cd.sub.x Te May. 2, 1978
4086106 Halogen-doped Hg,Cd,Te Apr. 25, 1978











 
 
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