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Class Information
Number: 257/E31.014
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Semiconductor devices responsive or sensitive to electromagnetic radiation (e.g., infrared radiation, adapted for conversion of radiation into electrical energy or for control of electrical energy by such radiation processes, or apparatus peculiar to manufacture or treatment of such devices, or of parts thereof) (epo) > Characterized by semiconductor body (epo) > Characterized by semiconductor body material (epo) > Inorganic materials (epo) > Including, apart from doping material or other impurity, only group iv element (epo) > Characterized by doping material (epo)
Description: This subclass is indented under subclass E31.011. This subclass is substantially the same in scope as ECLA classification H01L31/0288.
Patents under this class:
| Patent Number |
Title Of Patent |
Date Issued |
| 7279764 |
Silicon-based resonant cavity photodiode for image sensors |
Oct. 9, 2007 |
| 6943390 |
High-gain photodetector with separated PN junction and rare earth doped region and a method of forming the same |
Sep. 13, 2005 |
| RE38727 |
Photoelectric conversion device and method of making the same |
Apr. 19, 2005 |
| 6844248 |
Method of doping silicon, metal doped silicon, method of making solar cells, and solar cells |
Jan. 18, 2005 |
| 6737340 |
Method and apparatus for self-doping contacts to a semiconductor |
May. 18, 2004 |
| 6703295 |
Method and apparatus for self-doping contacts to a semiconductor |
Mar. 9, 2004 |
| 6695903 |
Dopant pastes for the production of p, p+, and n, n+ regions in semiconductors |
Feb. 24, 2004 |
| 6664566 |
Photoelectric conversion device and method of making the same |
Dec. 16, 2003 |
| 6664631 |
Apparatus for self-doping contacts to a semiconductor |
Dec. 16, 2003 |
| 6632730 |
Method for self-doping contacts to a semiconductor |
Oct. 14, 2003 |
| 6613653 |
Method of doping silicon, metal doped silicon, method of making solar cells, and solar cells |
Sep. 2, 2003 |
| 6503771 |
Semiconductor photoelectrically sensitive device |
Jan. 7, 2003 |
| 6346716 |
Semiconductor material having particular oxygen concentration and semiconductor device comprising the same |
Feb. 12, 2002 |
| 6339013 |
Method of doping silicon, metal doped silicon, method of making solar cells, and solar cells |
Jan. 15, 2002 |
| RE37441 |
Photoelectric conversion device |
Nov. 13, 2001 |
| 6313398 |
Ga-doped multi-crytsalline silicon, Ga-doped multi-crystalline silicon wafer and method for producing the same |
Nov. 6, 2001 |
| 6262359 |
Aluminum alloy back junction solar cell and a process for fabrication thereof |
Jul. 17, 2001 |
| 6180991 |
Semiconductor having low concentration of phosphorous |
Jan. 30, 2001 |
| 6096968 |
Solar cell with a back-surface field |
Aug. 1, 2000 |
| 6028264 |
Semiconductor having low concentration of carbon |
Feb. 22, 2000 |
| 6013872 |
Directionally solidified, multicrystalline silicon, a process for the production thereof and its use, and solar cells containing this silicon and a process for the production thereof |
Jan. 11, 2000 |
| 5926727 |
Phosphorous doping a semiconductor particle |
Jul. 20, 1999 |
| 5899704 |
Solar cell with a back-surface field method of production |
May. 4, 1999 |
| 5785769 |
Substrate for thin silicon solar cells |
Jul. 28, 1998 |
| 5763320 |
Boron doping a semiconductor particle |
Jun. 9, 1998 |
| 5646425 |
Supersaturated rare earth doped semiconductor layers by chemical vapor deposition |
Jul. 8, 1997 |
| 5581099 |
CCD solid state image device which has a semiconductor substrate with a P-type region with an N-type region formed therein by injection of arsenic |
Dec. 3, 1996 |
| 5534079 |
Supersaturated rare earth doped semiconductor layers formed by chemical vapor deposition |
Jul. 9, 1996 |
| 5476808 |
Method of making CCD solid state image sensing device |
Dec. 19, 1995 |
| 5468653 |
Photoelectric conversion device and method of making the same |
Nov. 21, 1995 |
| 5431743 |
Silicon for solar cells, a process for the preparation thereof, and the use thereof |
Jul. 11, 1995 |
| 5401331 |
Substrate for thin silicon solar cells |
Mar. 28, 1995 |
| 5349204 |
Photoelectric conversion device |
Sep. 20, 1994 |
| 5338691 |
Method of making a photodiode with reduced junction area |
Aug. 16, 1994 |
| 5322813 |
Method of making supersaturated rare earth doped semiconductor layers by chemical vapor deposition |
Jun. 21, 1994 |
| 5288656 |
Method of manufacturing a CCD solid state image sensing device |
Feb. 22, 1994 |
| 5243215 |
Semiconductor photodiode device with reduced junction area |
Sep. 7, 1993 |
| 5168321 |
Doped-germanium sensor for use in a system to control the alignment of a CO.sub.2 laser beam |
Dec. 1, 1992 |
| 5156978 |
Method of fabricating solar cells |
Oct. 20, 1992 |
| 5146296 |
Devices for detecting and/or imaging single photoelectron |
Sep. 8, 1992 |
| 5106763 |
Method of fabricating solar cells |
Apr. 21, 1992 |
| 5077223 |
Photoelectric conversion device and method of making the same |
Dec. 31, 1991 |
| 5057892 |
Light responsive avalanche diode |
Oct. 15, 1991 |
| 5021854 |
Silicon avalanche photodiode array |
Jun. 4, 1991 |
| 4875944 |
Amorphous photoelectric converting device |
Oct. 24, 1989 |
| 4843451 |
Photovoltaic device with O and N doping |
Jun. 27, 1989 |
| 4682019 |
Amorphous silicon photoelectric transducer with a photoconductive colorant layer |
Jul. 21, 1987 |
| 4608452 |
Lithium counterdoped silicon solar cell |
Aug. 26, 1986 |
| 4581476 |
Photoelectric conversion device |
Apr. 8, 1986 |
| 4503450 |
Accumulation mode bulk channel charge-coupled devices |
Mar. 5, 1985 |
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