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Class Information
Number: 257/E31.013
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Semiconductor devices responsive or sensitive to electromagnetic radiation (e.g., infrared radiation, adapted for conversion of radiation into electrical energy or for control of electrical energy by such radiation processes, or apparatus peculiar to manufacture or treatment of such devices, or of parts thereof) (epo) > Characterized by semiconductor body (epo) > Characterized by semiconductor body material (epo) > Inorganic materials (epo) > Including, apart from doping material or other impurity, only group iv element (epo) > Comprising porous silicon as part of active layer (epo)
Description: This subclass is indented under subclass E31.011. This subclass is substantially the same in scope as ECLA classification H01L31/028P.










Patents under this class:

Patent Number Title Of Patent Date Issued
8450139 Method for manufacturing photoelectric conversion device May. 28, 2013
8124953 Sensor device having a porous structure element Feb. 28, 2012
8110836 Semiconductor device Feb. 7, 2012
7723760 Semiconductor-based porous structure enabled by capillary force May. 25, 2010
7723845 System and method of a heat transfer system with an evaporator and a condenser May. 25, 2010
7719031 Heterojunction biploar transistor and method for manufacturing same May. 18, 2010
7659178 Semiconductor device structures with reduced junction capacitance and drain induced barrier lowering and methods for fabricating such device structures and for fabricating a semiconductor-on-i Feb. 9, 2010
7531423 Reduced-resistance finFETs by sidewall silicidation and methods of manufacturing the same May. 12, 2009
6103546 Method to improve the short circuit current of the porous silicon photodetector Aug. 15, 2000
5644156 Porous silicon photo-device capable of photoelectric conversion Jul. 1, 1997
4990988 Laterally stacked Schottky diodes for infrared sensor applications Feb. 5, 1991











 
 
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