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Class Information
Number: 257/E31.012
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Semiconductor devices responsive or sensitive to electromagnetic radiation (e.g., infrared radiation, adapted for conversion of radiation into electrical energy or for control of electrical energy by such radiation processes, or apparatus peculiar to manufacture or treatment of such devices, or of parts thereof) (epo) > Characterized by semiconductor body (epo) > Characterized by semiconductor body material (epo) > Inorganic materials (epo) > Including, apart from doping material or other impurity, only group iv element (epo) > For device having potential or surface barrier (epo)
Description: This subclass is indented under subclass E31.011. This subclass is substantially the same in scope as ECLA classification H01L31/028B.










Patents under this class:

Patent Number Title Of Patent Date Issued
8659107 Radiation receiver and method of producing a radiation receiver Feb. 25, 2014
8466003 Methods of building crystalline silicon solar cells for use in combinatorial screening Jun. 18, 2013
8178382 Suspended germanium photodetector for silicon waveguide May. 15, 2012
7902620 Suspended germanium photodetector for silicon waveguide Mar. 8, 2011
7622758 CMOS image sensor with improved performance incorporating pixels with burst reset operation Nov. 24, 2009
7196356 Submount and semiconductor device Mar. 27, 2007
6911594 Photovoltaic device Jun. 28, 2005
RE38727 Photoelectric conversion device and method of making the same Apr. 19, 2005
6743655 Negative differential resistance reoxidized nitride silicon-based photodiode and method Jun. 1, 2004
6664566 Photoelectric conversion device and method of making the same Dec. 16, 2003
6593636 High speed silicon photodiodes and method of manufacture Jul. 15, 2003
6503771 Semiconductor photoelectrically sensitive device Jan. 7, 2003
6445021 Negative differential resistance reoxidized nitride silicon-based photodiode and method Sep. 3, 2002
6346716 Semiconductor material having particular oxygen concentration and semiconductor device comprising the same Feb. 12, 2002
RE37441 Photoelectric conversion device Nov. 13, 2001
6180991 Semiconductor having low concentration of phosphorous Jan. 30, 2001
6075253 Monocrystalline semiconductor photodetector Jun. 13, 2000
6028264 Semiconductor having low concentration of carbon Feb. 22, 2000
5468653 Photoelectric conversion device and method of making the same Nov. 21, 1995
5349204 Photoelectric conversion device Sep. 20, 1994
5215631 Electrolytic preparation of tin, other metals, alloys and compounds Jun. 1, 1993
5206523 Microporous crystalline silicon of increased band-gap for semiconductor applications Apr. 27, 1993
5101254 Schottky barrier semiconductor photodetector including graded energy band gap layer Mar. 31, 1992
5077223 Photoelectric conversion device and method of making the same Dec. 31, 1991
5008206 Method for making a photoelectric conversion device using an amorphous nucleation site Apr. 16, 1991
4826579 Electrolytic preparation of tin and other metals May. 2, 1989
4632736 Electrolytic preparation of tin Dec. 30, 1986
4581476 Photoelectric conversion device Apr. 8, 1986
4571447 Photovoltaic cell of semi-conducting diamond Feb. 18, 1986











 
 
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