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Class Information
Number: 257/E31.012
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Semiconductor devices responsive or sensitive to electromagnetic radiation (e.g., infrared radiation, adapted for conversion of radiation into electrical energy or for control of electrical energy by such radiation processes, or apparatus peculiar to manufacture or treatment of such devices, or of parts thereof) (epo) > Characterized by semiconductor body (epo) > Characterized by semiconductor body material (epo) > Inorganic materials (epo) > Including, apart from doping material or other impurity, only group iv element (epo) > For device having potential or surface barrier (epo)
Description: This subclass is indented under subclass E31.011. This subclass is substantially the same in scope as ECLA classification H01L31/028B.
Patents under this class:
| Patent Number |
Title Of Patent |
Date Issued |
| 7622758 |
CMOS image sensor with improved performance incorporating pixels with burst reset operation |
Nov. 24, 2009 |
| 7196356 |
Submount and semiconductor device |
Mar. 27, 2007 |
| 6911594 |
Photovoltaic device |
Jun. 28, 2005 |
| RE38727 |
Photoelectric conversion device and method of making the same |
Apr. 19, 2005 |
| 6743655 |
Negative differential resistance reoxidized nitride silicon-based photodiode and method |
Jun. 1, 2004 |
| 6664566 |
Photoelectric conversion device and method of making the same |
Dec. 16, 2003 |
| 6593636 |
High speed silicon photodiodes and method of manufacture |
Jul. 15, 2003 |
| 6503771 |
Semiconductor photoelectrically sensitive device |
Jan. 7, 2003 |
| 6445021 |
Negative differential resistance reoxidized nitride silicon-based photodiode and method |
Sep. 3, 2002 |
| 6346716 |
Semiconductor material having particular oxygen concentration and semiconductor device comprising the same |
Feb. 12, 2002 |
| RE37441 |
Photoelectric conversion device |
Nov. 13, 2001 |
| 6180991 |
Semiconductor having low concentration of phosphorous |
Jan. 30, 2001 |
| 6075253 |
Monocrystalline semiconductor photodetector |
Jun. 13, 2000 |
| 6028264 |
Semiconductor having low concentration of carbon |
Feb. 22, 2000 |
| 5468653 |
Photoelectric conversion device and method of making the same |
Nov. 21, 1995 |
| 5349204 |
Photoelectric conversion device |
Sep. 20, 1994 |
| 5215631 |
Electrolytic preparation of tin, other metals, alloys and compounds |
Jun. 1, 1993 |
| 5206523 |
Microporous crystalline silicon of increased band-gap for semiconductor applications |
Apr. 27, 1993 |
| 5101254 |
Schottky barrier semiconductor photodetector including graded energy band gap layer |
Mar. 31, 1992 |
| 5077223 |
Photoelectric conversion device and method of making the same |
Dec. 31, 1991 |
| 5008206 |
Method for making a photoelectric conversion device using an amorphous nucleation site |
Apr. 16, 1991 |
| 4826579 |
Electrolytic preparation of tin and other metals |
May. 2, 1989 |
| 4632736 |
Electrolytic preparation of tin |
Dec. 30, 1986 |
| 4581476 |
Photoelectric conversion device |
Apr. 8, 1986 |
| 4571447 |
Photovoltaic cell of semi-conducting diamond |
Feb. 18, 1986 |
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