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Class Information
Number: 257/E29.66
Name: Active solid-state devices (e.g., transistors, solid-state diodes) >

Sub-classes under this class:

Class Number Class Name Patents
257/1 Bulk effect device 167
257/104 Tunneling pn junction (e.g., esaki diode) device 221
257/107 Regenerative type switching device (e.g., scr, comfet, thyristor) 284
257/183 Heterojunction device 418
257/202 Gate arrays 601
257/212 Conductivity modulation device (e.g., unijunction transistor, double-base diode, conductivity-modulated transistor) 111
257/213 Field effect device 583
257/40 Organic semiconductor material 4,334
257/41 Point contact device 75
257/414 Responsive to non-electrical signal (e.g., chemical, stress, light, or magnetic field sensors) 1,112
257/42 Semiconductor is selenium or tellurium in elemental form 152
257/43 Semiconductor is an oxide of a metal (e.g., cuo, zno) or copper sulfide 835
257/44 With metal contact alloyed to elemental semiconductor type pn junction in nonregenerative structure 56
257/471 Schottky barrier 367
257/48 Test or calibration structure 1,601
257/487 With means to increase breakdown voltage threshold 218
257/49 Non-single crystal, or recrystallized, semiconductor material forms part of active junction (including field-induced active junction) 311
257/497 Punchthrough structure device (e.g., punchthrough transistor, camel barrier diode) 87
257/499 Integrated circuit structure with electrically isolated components 503
257/565 Bipolar transistor structure 617
257/594 With groove to define plural diodes 104
257/595 Voltage variable capacitance device 154
257/603 Avalanche diode (e.g., so-called "zener" diode having breakdown voltage greater than 6 volts) 271
257/607 With specified dopant (e.g., plural dopants of same conductivity in same region) 323
257/613 Including semiconductor material other than silicon or gallium arsenide (gaas) (e.g., pb x sn 1-x te) 298
257/617 Including region containing crystal damage 225
257/618 Physical configuration of semiconductor (e.g., mesa, bevel, groove, etc.) 741
257/629 With means to control surface effects 194
257/653 With specified shape of pn junction 214
257/655 With specified impurity concentration gradient 309
257/658 Plate type rectifier array 46
257/659 With shielding (e.g., electrical or magnetic shielding, or from electromagnetic radiation or charged particles) 916
257/661 Superconductive contact or lead 93
257/664 Transmission line lead (e.g., stripline, coax, etc.) 441
257/665 Contacts or leads including fusible link means or noise suppression means 360
257/666 Lead frame 2,872
257/678 Housing or package 2,455
257/734 Combined with electrical contact or lead 1,326
257/76 Specified wide band gap (1.5ev) semiconductor material other than gaasp or gaalas 621
257/787 Encapsulated 2,505
257/79 Incoherent light emitter structure 2,557
257/797 Alignment marks 1,016
257/798 Miscellaneous 236
257/9 Thin active physical layer which is (1) an active potential well layer thin enough to establish discrete quantum energy levels or (2) an active barrier layer thin enough to permit quantum mechanical tunneling or (3) an active layer thin enough to permit carrier transmission with substantially no scattering (e.g., superlattice quantum well, or ballistic transport device) 504
257/900 Mosfet type gate sidewall insulating spacer 499
257/901 Mosfet substrate bias 88
257/902 Fet with metal source region 30
257/903 Fet configuration adapted for use as static memory cell 711
257/905 Plural dram cells share common contact or common trench 146
257/906 Dram with capacitor electrodes used for accessing (e.g., bit line is capacitor plate) 178
257/907 Folded bit line dram configuration 77
257/908 Dram configuration with transistors and capacitors of pairs of cells along a straight line between adjacent bit lines 132
257/909 Macrocell arrays (e.g., gate arrays with variable size or configuration of cells) 92
257/910 Diode arrays (e.g., diode read-only memory array) 89
257/911 Light sensitive array adapted to be scanned by electron beam (e.g.,vidicon device) 31
257/912 Charge transfer device using both electron and hole signal carriers 25
257/913 With means to absorb or localize unwanted impurities or defects from semiconductors (e.g., heavy metal gettering) 80
257/914 Polysilicon containing oxygen, nitrogen, or carbon (e.g., sipos) 83
257/915 With titanium nitride portion or region 191
257/916 Narrow band gap semiconductor material (>>1ev) 42
257/917 Plural dopants of same conductivity type in same region 39
257/918 Light emitting regenerative switching device (e.g., light emitting scr) arrays, circuitry, etc. 106
257/919 Elements of similar construction connected in series or parallel to average out manufacturing variations in characteristics 28
257/920 Conductor layers on different levels connected in parallel (e.g., to reduce resistance) 51
257/921 Radiation hardened semiconductor device 40
257/922 With means to prevent inspection of or tampering with an integrated circuit (e.g., "smart card", anti-tamper) 85
257/923 With means to optimize electrical conductor current carrying capacity (e.g., particular conductor aspect ratio) 83
257/924 With passive device (e.g., capacitor), or battery, as integral part of housing or housing element (e.g., cap) 119
257/925 Bridge rectifier module 26
257/926 Elongated lead extending axially through another elongated lead 91
257/927 Different doping levels in different parts of pn junction to produce shaped depletion layer 29
257/928 With shorted pn or schottky junction other than emitter junction 45
257/929 Pn junction isolated integrated circuit with isolation walls having minimum dopant concentration at intermediate depth in epitaxial layer (e.g., diffused from both surfaces of epitaxial layer) 23
257/930 Thermoelectric (e.g., peltier effect) cooling 157
257/E21.001 Processes or apparatus adapted for manufacture or treatment of semiconductor or solid-state devices or of parts thereof (epo) 541
257/E23.001 Packaging, interconnects, and markings for semiconductor or other solid-state devices (epo) 305
257/E25.001 Assemblies consisting of plurality of individual semiconductor or other solid-state devices (epo) 26
257/E27.001 Device consisting of a plurality of semiconductor or other solid state components formed in or on a common substrate, e.g., integrated circuit device (epo) 124
257/E29.001 Semiconductors devices adapted for rectifying, amplifying, oscillating, or switching, capacitors, or resistors with at least one potential-jump barrier or surface barrier (epo) 134
257/E31.001 Semiconductor devices responsive or sensitive to electromagnetic radiation (e.g., infrared radiation, adapted for conversion of radiation into electrical energy or for control of electrical energy by such radiation processes, or apparatus peculiar to manufacture or treatment of such devices, or of parts thereof) (epo) 216
257/E33.001 Light emitting semiconductor devices having a potential or a surface barrier, processes or apparatus peculiar to the manufacture or treatment of such devices, or of parts thereof 612
257/E39.001 Devices using superconductivity, processes, or apparatus peculiar to manufacture or treatment of such devices, or of parts thereof (epo) 14
257/E43.001 Semiconductor or solid-state devices using galvano-magnetic or similar magnetic effects, processes or apparatus peculiar to manufacture or treatment of such devices, or of parts thereof (epo) 49
257/E45.001 Solid-state devices adapted for rectifying, amplifying, oscillating, or switching without potential-jump barrier or surface barrier, e.g., dielectric triodes; ovshinsky-effect devices, processes, or apparatus peculiar to manufacture or treatment thereof, or of parts thereof (epo) 210
257/E47.001 Bulk negative resistance effect devices, e.g., gunn-effect devices, processes, or apparatus peculiar to manufacture or treatment of such devices, or of parts thereof (epo) 153
257/E49.001 Solid-state devices with at least one potential-jump barrier or surface barrier using active layer of lower electrical conductivity than material adjacent thereto and through which carrier tunneling occurs, processes or apparatus peculiar to manufacture or treatment of such devices, or of parts thereof (epo) 42
257/E51.001 Organic solid state devices, processes or apparatus peculiar to manufacture or treatment of such devices or of parts thereof 403

Patents under this class:

Patent Number Title Of Patent Date Issued

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