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Class Information
Number: 257/E29.346
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Semiconductors devices adapted for rectifying, amplifying, oscillating, or switching, capacitors, or resistors with at least one potential-jump barrier or surface barrier (epo) > Types of semiconductor device (epo) > Controllable only by variation of electric current supplied or only electric potential applied to electrode carrying current to be rectified, amplified, oscillated, or switched (epo) > Capacitor with potential barrier or surface barrier (epo) > Metal-insulator-semiconductor (e.g., mos capacitor) (epo) > Trench capacitor (epo)
Description: This subclass is indented under subclass E29.345. This subclass is substantially the same in scope as ECLA classification H01L29/94B.










Patents under this class:
1 2 3 4 5 6 7

Patent Number Title Of Patent Date Issued
4397075 FET Memory cell structure and process Aug. 9, 1983
4327476 Method of manufacturing semiconductor devices May. 4, 1982
4017885 Large value capacitor Apr. 12, 1977
3962713 Large value capacitor Jun. 8, 1976

1 2 3 4 5 6 7










 
 
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