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Class Information
Number: 257/E29.346
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Semiconductors devices adapted for rectifying, amplifying, oscillating, or switching, capacitors, or resistors with at least one potential-jump barrier or surface barrier (epo) > Types of semiconductor device (epo) > Controllable only by variation of electric current supplied or only electric potential applied to electrode carrying current to be rectified, amplified, oscillated, or switched (epo) > Capacitor with potential barrier or surface barrier (epo) > Metal-insulator-semiconductor (e.g., mos capacitor) (epo) > Trench capacitor (epo)
Description: This subclass is indented under subclass E29.345. This subclass is substantially the same in scope as ECLA classification H01L29/94B.










Patents under this class:
1 2 3 4 5 6 7

Patent Number Title Of Patent Date Issued
6288422 Structure and process for fabricating a 6F2 DRAM cell having vertical MOSFET and large trench capacitance Sep. 11, 2001
6281539 Structure and process for 6F2 DT cell having vertical MOSFET and large storage capacitance Aug. 28, 2001
6265741 Trench capacitor with epi buried layer Jul. 24, 2001
6265279 Method for fabricating a trench capacitor Jul. 24, 2001
6259129 Strap with intrinsically conductive barrier Jul. 10, 2001
6236077 Trench electrode with intermediate conductive barrier layer May. 22, 2001
6236079 Dynamic semiconductor memory device having a trench capacitor May. 22, 2001
6214686 Spatially offset deep trenches for high density DRAMS Apr. 10, 2001
6204527 Semiconductor memory device and method for producing same Mar. 20, 2001
6177696 Integration scheme enhancing deep trench capacitance in semiconductor integrated circuit devices Jan. 23, 2001
6140674 Buried trench capacitor Oct. 31, 2000
6140673 Semiconductor memory device and fabricating method Oct. 31, 2000
6140199 Method and arrangement of a buried capacitor, and a buried capacitor arranged according to said method Oct. 31, 2000
6137128 Self-isolated and self-aligned 4F-square vertical fet-trench dram cells Oct. 24, 2000
6057216 Low temperature diffusion process for dopant concentration enhancement May. 2, 2000
6018174 Bottle-shaped trench capacitor with epi buried layer Jan. 25, 2000
5998821 Dynamic ram structure having a trench capacitor Dec. 7, 1999
5804851 Semiconductor memory device and manufacturing method thereof Sep. 8, 1998
5770876 Semiconductor trench capacitor cell having a buried strap Jun. 23, 1998
5698878 Plate potential applying structure of trench capacitor cell Dec. 16, 1997
5635419 Porous silicon trench and capacitor structures Jun. 3, 1997
5629226 Method of manufacturing a buried plate type DRAM having a widened trench structure May. 13, 1997
5592412 Enhanced deep trench storage node capacitance for DRAM Jan. 7, 1997
5555520 Trench capacitor cells for a dram having single monocrystalline capacitor electrode Sep. 10, 1996
5545583 Method of making semiconductor trench capacitor cell having a buried strap Aug. 13, 1996
5521114 Trench sidewall structure May. 28, 1996
5508542 Porous silicon trench and capacitor structures Apr. 16, 1996
5504028 Method of forming a dynamic random memory device Apr. 2, 1996
5442585 Device having dielectric thin film Aug. 15, 1995
5410503 Semiconductor memory device having memory cells including transistors and capacitors Apr. 25, 1995
5343354 Stacked trench capacitor and a method for making the same Aug. 30, 1994
5336912 Buried plate type DRAM Aug. 9, 1994
5319228 Semiconductor memory device with trench-type capacitor Jun. 7, 1994
5309008 Semiconductor memory device having a trench capacitor May. 3, 1994
5292679 Process for producing a semiconductor memory device having memory cells including transistors and capacitors Mar. 8, 1994
5283453 Trench sidewall structure Feb. 1, 1994
5237528 Semiconductor memory Aug. 17, 1993
5214496 Semiconductor memory May. 25, 1993
5182224 Method of making dynamic random access memory cell having a SDHT structure Jan. 26, 1993
5168336 Dynamic random access memory device with trench type memory cell Dec. 1, 1992
5155657 High area capacitor formation using material dependent etching Oct. 13, 1992
5153813 High area capacitor formation using dry etching Oct. 6, 1992
5112771 Method of fibricating a semiconductor device having a trench May. 12, 1992
5100822 Semiconductor integrated circuit device and method of production thereof Mar. 31, 1992
5097381 Double sidewall trench capacitor cell Mar. 17, 1992
5075817 Trench capacitor for large scale integrated memory Dec. 24, 1991
5064777 Fabrication method for a double trench memory cell device Nov. 12, 1991
5045904 Semiconductor device including an improved trench arrangement Sep. 3, 1991
5034787 Structure and fabrication method for a double trench memory cell device Jul. 23, 1991
5028980 Trench capacitor with expanded area Jul. 2, 1991

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