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Class Information
Number: 257/E29.346
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Semiconductors devices adapted for rectifying, amplifying, oscillating, or switching, capacitors, or resistors with at least one potential-jump barrier or surface barrier (epo) > Types of semiconductor device (epo) > Controllable only by variation of electric current supplied or only electric potential applied to electrode carrying current to be rectified, amplified, oscillated, or switched (epo) > Capacitor with potential barrier or surface barrier (epo) > Metal-insulator-semiconductor (e.g., mos capacitor) (epo) > Trench capacitor (epo)
Description: This subclass is indented under subclass E29.345. This subclass is substantially the same in scope as ECLA classification H01L29/94B.










Patents under this class:
1 2 3 4 5 6 7

Patent Number Title Of Patent Date Issued
6756257 Patterned SOI regions on semiconductor chips Jun. 29, 2004
6750499 Self-aligned trench-type dram structure and its contactless dram arrays Jun. 15, 2004
6744089 Self-aligned lateral-transistor DRAM cell structure Jun. 1, 2004
6743670 High dielectric constant materials forming components of DRAM such as deep-trench capacitors and gate dielectric (insulators) for support circuits Jun. 1, 2004
6737695 Memory module having a memory cell and method for fabricating the memory module May. 18, 2004
6734484 Vertical transistor DRAM structure and its manufacturing methods May. 11, 2004
6724031 Method for preventing strap-to-strap punch through in vertical DRAMs Apr. 20, 2004
6720606 Dynamic semiconductor memory device having a trench capacitor Apr. 13, 2004
6707086 Method for forming crystalline silicon nitride Mar. 16, 2004
6703273 Aggressive capacitor array cell layout for narrow diameter DRAM trench capacitor structures via SOI technology Mar. 9, 2004
6699794 Self aligned buried plate Mar. 2, 2004
6693006 Method for increasing area of a trench capacitor Feb. 17, 2004
6667504 Self-aligned buried strap process using doped HDP oxide Dec. 23, 2003
6664161 Method and structure for salicide trench capacitor plate electrode Dec. 16, 2003
6661049 Microelectronic capacitor structure embedded within microelectronic isolation region Dec. 9, 2003
6649959 Method for increasing a very-large-scale-integrated (VLSI) capacitor size on bulk silicon and silicon-on-insulator (SOI) wafers and structure formed thereby Nov. 18, 2003
6635526 Structure and method for dual work function logic devices in vertical DRAM process Oct. 21, 2003
6635915 Semiconductor device having trench capacitor formed in SOI substrate Oct. 21, 2003
6620675 Increased capacitance trench capacitor Sep. 16, 2003
6610567 DRAM having a guard ring and process of fabricating the same Aug. 26, 2003
6605838 Process flow for thick isolation collar with reduced length Aug. 12, 2003
6599798 Method of preparing buried LOCOS collar in trench DRAMS Jul. 29, 2003
6566191 Forming electronic structures having dual dielectric thicknesses and the structure so formed May. 20, 2003
6563155 Cross point type DRAM cell composed of a pillar having an active region May. 13, 2003
6563160 High dielectric constant materials forming components of DRAM such as deep-trench capacitors and gate dielectric (insulators) for support circuits May. 13, 2003
6552383 Integrated decoupling capacitors Apr. 22, 2003
6552381 Trench capacitors in SOI substrates Apr. 22, 2003
6521938 Dynamic-type semiconductor memory device Feb. 18, 2003
6518119 Strap with intrinsically conductive barrier Feb. 11, 2003
6515327 Trench capacitor with expanded area and method of making the same Feb. 4, 2003
6503793 Method for concurrently forming an ESD protection device and a shallow trench isolation region Jan. 7, 2003
6501117 Static self-refreshing DRAM structure and operating mode Dec. 31, 2002
6489646 DRAM cells with buried trench capacitors Dec. 3, 2002
6484054 Deep trench semiconductor capacitors having reverse bias diodes for implantable medical devices Nov. 19, 2002
6479852 Memory cell having a deep trench capacitor and a vertical channel Nov. 12, 2002
6452224 Method for manufacture of improved deep trench eDRAM capacitor and structure produced thereby Sep. 17, 2002
6448139 Manufacturing method of semiconductor device Sep. 10, 2002
6437401 Structure and method for improved isolation in trench storage cells Aug. 20, 2002
6437385 Integrated circuit capacitor Aug. 20, 2002
6437388 Compact trench capacitor memory cell with body contact Aug. 20, 2002
6407421 DRAM having a guard ring and process of fabricating the same Jun. 18, 2002
6404000 Pedestal collar structure for higher charge retention time in trench-type DRAM cells Jun. 11, 2002
6387772 Method for forming trench capacitors in SOI substrates May. 14, 2002
6373085 Semiconductor memory cell having two epitaxial layers and its manufacturing method Apr. 16, 2002
6373086 Notched collar isolation for suppression of vertical parasitic MOSFET and the method of preparing the same Apr. 16, 2002
6358791 Method for increasing a very-large-scale-integrated (VLSI) capacitor size on bulk silicon and silicon-on-insulator (SOI) wafers and structure formed thereby Mar. 19, 2002
6333532 Patterned SOI regions in semiconductor chips Dec. 25, 2001
6316309 Method of forming self-isolated and self-aligned 4F-square vertical FET-trench DRAM cells Nov. 13, 2001
6310359 Structures containing quantum conductive barrier layers Oct. 30, 2001
6306720 Method for forming capacitor of mixed-mode device Oct. 23, 2001

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