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Class Information
Number: 257/E29.334
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Semiconductors devices adapted for rectifying, amplifying, oscillating, or switching, capacitors, or resistors with at least one potential-jump barrier or surface barrier (epo) > Types of semiconductor device (epo) > Controllable only by variation of electric current supplied or only electric potential applied to electrode carrying current to be rectified, amplified, oscillated, or switched (epo) > Diode (epo) > Transit-time diode (e.g., impatt, trapatt diode) (epo)
Description: This subclass is indented under subclass E29.327. This subclass is substantially the same in scope as ECLA classification H01L29/864.










Patents under this class:
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Patent Number Title Of Patent Date Issued
8492866 Isolated Zener diode Jul. 23, 2013
8258509 Micro vacuum gauge Sep. 4, 2012
8212327 High fill-factor laser-treated semiconductor device on bulk material with single side contact scheme Jul. 3, 2012
7638857 Structure of silicon controlled rectifier Dec. 29, 2009
7511357 Trenched MOSFETs with improved gate-drain (GD) clamp diodes Mar. 31, 2009
7345325 Avalanche photodiode Mar. 18, 2008
6855587 Gate-controlled, negative resistance diode device using band-to-band tunneling Feb. 15, 2005
6774460 IMPATT diodes Aug. 10, 2004
6657240 Gate-controlled, negative resistance diode device using band-to-band tunneling Dec. 2, 2003
6436784 Method of forming semiconductor structure Aug. 20, 2002
6410950 Geometrically coupled field-controlled-injection diode, voltage limiter and freewheeling diode having the geometrically coupled field-controlled-injection diode Jun. 25, 2002
6326650 Method of forming a semiconductor structure Dec. 4, 2001
6252250 High power impatt diode Jun. 26, 2001
5977611 Power diode and hybrid diode, voltage limiter and freewheeling diode having the power diode Nov. 2, 1999
5652551 Method for high frequency device operation with high temperature and radiation hard characteristics Jul. 29, 1997
5512776 Interdigitated IMPATT devices Apr. 30, 1996
5466965 High efficiency, high power multiquantum well IMPATT device with optical injection locking Nov. 14, 1995
5373186 Bipolar transistor with monoatomic base layer between emitter and collector layers Dec. 13, 1994
5329150 Semiconductor photodetector devices with pairs of monoatomic layers separated by intrinsic layers Jul. 12, 1994
5329257 SiGe transferred electron device and oscillator using same Jul. 12, 1994
5243199 High frequency device Sep. 7, 1993
5216260 Optically bistable semiconductor device with pairs of monoatomic layers separated by intrinsic layers Jun. 1, 1993
5168328 Heterojunction impatt diode Dec. 1, 1992
5060234 Injection laser with at least one pair of monoatomic layers of doping atoms Oct. 22, 1991
4959328 Method for manufacturing a semiconductor component contactable on both sides Sep. 25, 1990
4910583 Semiconductor body with heat sink Mar. 20, 1990
4882609 Semiconductor devices with at least one monoatomic layer of doping atoms Nov. 21, 1989
4872039 Buried lateral diode and method for making same Oct. 3, 1989
4866488 Ballistic transport filter and device Sep. 12, 1989
4857972 Impatt diode Aug. 15, 1989
4649405 Electron ballistic injection and extraction for very high efficiency, high frequency transferred electron devices Mar. 10, 1987
4617532 Optically stabilized semiconductor microwave diodes Oct. 14, 1986
4596070 Interdigitated IMPATT devices Jun. 24, 1986
H29 Tunnett diode and method of making Mar. 4, 1986
4568889 Distributed diode VCO with stripline coupled output and distributed variable capacitor control Feb. 4, 1986
4553317 Method of obtaining an impact ionization coefficient rate by junction of different kinds of semiconductors Nov. 19, 1985
4525732 Distributed IMPATT structure Jun. 25, 1985
4374012 Method of making semiconductor device having improved Schottky-barrier junction Feb. 15, 1983
4353081 Graded bandgap rectifying semiconductor devices Oct. 5, 1982
4352115 Transit time diode with an input structure formed by a matrix of micropoints Sep. 28, 1982
4291320 Heterojunction IMPATT diode Sep. 22, 1981
4286276 Dual Schottky contact avalanche semiconductor structure with electrode spacing equal to EPI layer thickness Aug. 25, 1981
4283734 Process for the manufacture of millimeter wave sources of the module type Aug. 11, 1981
4238763 Solid state microwave devices with small active contact and large passive contact Dec. 9, 1980
4231058 Tungsten-titanium-chromium/gold semiconductor metallization Oct. 28, 1980
4230505 Method of making an impatt diode utilizing a combination of epitaxial deposition, ion implantation and substrate removal Oct. 28, 1980
4228453 (III) Plane gallium arsenide IMPATT diode Oct. 14, 1980
4201604 Process for making a negative resistance diode utilizing spike doping May. 6, 1980
4197551 Semiconductor device having improved Schottky-barrier junction Apr. 8, 1980
4186407 Heterojunction avalanche diode with a ternary alloy of gallium, indium and arsenic, and a binary alloy of indium and phosphorus Jan. 29, 1980

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