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Class Information
Number: 257/E29.331
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Semiconductors devices adapted for rectifying, amplifying, oscillating, or switching, capacitors, or resistors with at least one potential-jump barrier or surface barrier (epo) > Types of semiconductor device (epo) > Controllable only by variation of electric current supplied or only electric potential applied to electrode carrying current to be rectified, amplified, oscillated, or switched (epo) > Diode (epo) > Charge trapping diode (epo)
Description: This subclass is indented under subclass E29.327. This subclass is substantially the same in scope as ECLA classification H01L29/861F.










Patents under this class:

Patent Number Title Of Patent Date Issued
8390100 Conductive oxide electrodes Mar. 5, 2013
8212327 High fill-factor laser-treated semiconductor device on bulk material with single side contact scheme Jul. 3, 2012
7897453 Dual insulating layer diode with asymmetric interface state and method of fabrication Mar. 1, 2011
7888200 Embedded memory in a CMOS circuit and methods of forming the same Feb. 15, 2011
7732281 Methods for fabricating dual bit flash memory devices Jun. 8, 2010
7670963 Single-wafer process for fabricating a nonvolatile charge trap memory device Mar. 2, 2010
7265422 Low voltage trigger and save area electrostatic discharge device Sep. 4, 2007
6992349 Rail stack array of charge storage devices and method of making same Jan. 31, 2006
6897523 Semiconductor device May. 24, 2005
6897514 Two mask floating gate EEPROM and method of making May. 24, 2005
6881994 Monolithic three dimensional array of charge storage devices containing a planarized surface Apr. 19, 2005
6862216 Non-volatile memory cell with gated diode and MOS transistor and method for using such cell Mar. 1, 2005
6636433 Electronic device and recording method using the same Oct. 21, 2003
6424000 Floating gate memory apparatus and method for selected programming thereof Jul. 23, 2002
6277691 Method to fabricate a robust and reliable memory device Aug. 21, 2001
6181601 Flash memory cell using p+/N-well diode with double poly floating gate Jan. 30, 2001
6165851 Semiconductor nonvolatile storage and method of fabricating the same Dec. 26, 2000
6160286 Method for operation of a flash memory using n+/p-well diode Dec. 12, 2000
6144087 Semiconductor nonvolatile storage and method of fabricating the same Nov. 7, 2000
6084262 Etox cell programmed by band-to-band tunneling induced substrate hot electron and read by gate induced drain leakage current Jul. 4, 2000
6034893 Non-volatile memory cell having dual avalanche injection elements Mar. 7, 2000
5814853 Sourceless floating gate memory device and method of storing data Sep. 29, 1998
5670790 Electronic device Sep. 23, 1997
5665978 Nonlinear element and bistable memory device Sep. 9, 1997
5512762 Quantum device with plural stable states Apr. 30, 1996
5485017 Semiconductor device and method of manufacturing same Jan. 16, 1996
5432356 Semiconductor heterojunction floating layer memory device and method for storing information in the same Jul. 11, 1995
5359554 Semiconductor memory device having an energy gap for high speed operation Oct. 25, 1994
5162880 Nonvolatile memory cell having gate insulation film with carrier traps therein Nov. 10, 1992
4953928 MOS device for long-term learning Sep. 4, 1990
4672409 Nonvolatile semiconductor memory device Jun. 9, 1987
4503521 Non-volatile memory and switching device Mar. 5, 1985
4432075 Electrically programmable non-volatile memory Feb. 14, 1984
4103312 Semiconductor memory devices Jul. 25, 1978
4037243 Semi conductor memory cell utilizing sensing of variations in PN junction current conrolled by stored data Jul. 19, 1977
4010482 Non-volatile Schottky barrier diode memory cell Mar. 1, 1977
3972059 Dielectric diode, fabrication thereof, and charge store memory therewith Jul. 27, 1976











 
 
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