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Class Information
Number: 257/E29.33
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Semiconductors devices adapted for rectifying, amplifying, oscillating, or switching, capacitors, or resistors with at least one potential-jump barrier or surface barrier (epo) > Types of semiconductor device (epo) > Controllable only by variation of electric current supplied or only electric potential applied to electrode carrying current to be rectified, amplified, oscillated, or switched (epo) > Diode (epo) > Hi-lo semiconductor device (e.g., memory device) (epo)
Description: This subclass is indented under subclass E29.327. This subclass is substantially the same in scope as ECLA classification H01L29/861E.










Patents under this class:
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Patent Number Title Of Patent Date Issued
8581280 Optoelectronic semiconductor chip Nov. 12, 2013
8468692 Method of manufacturing a variable resistance memory device Jun. 25, 2013
8390066 Semiconductor nanowire memory device Mar. 5, 2013
8344346 Semiconductor device having resistive device Jan. 1, 2013
8314023 Methods involving memory with high dielectric constant antifuses adapted for use at low voltage Nov. 20, 2012
8288751 Semiconductor memory device and manufacturing method of the same Oct. 16, 2012
8212232 Resistance changing device and method for fabricating the same Jul. 3, 2012
8212327 High fill-factor laser-treated semiconductor device on bulk material with single side contact scheme Jul. 3, 2012
8212282 Semiconductor device used in step-up DC-DC converter, and step-up DC-DC converter Jul. 3, 2012
8174062 Semiconductor memory device and manufacturing method thereof May. 8, 2012
7989791 Diode structure and memory device including the same Aug. 2, 2011
7932543 Wire structure and semiconductor device comprising the wire structure Apr. 26, 2011
7888200 Embedded memory in a CMOS circuit and methods of forming the same Feb. 15, 2011
7863655 Phase change memory cells with dual access devices Jan. 4, 2011
7851778 Non-volatile electrical phase change memory device comprising interfacial control layer and method for the preparation thereof Dec. 14, 2010
7842967 Semiconductor device used in step-up DC-DC converter, and step-up DC-DC converter Nov. 30, 2010
7807995 Nonvolatile semiconductor memory apparatus and manufacturing method thereof Oct. 5, 2010
7781805 Memory with high dielectric constant antifuses adapted for use at low voltage Aug. 24, 2010
7696043 Method of manufacturing a flash memory device Apr. 13, 2010
7687847 Semiconductor device and fabricating method thereof Mar. 30, 2010
7349248 Non-volatile memory Mar. 25, 2008
7307280 Memory devices with active and passive doped sol-gel layers Dec. 11, 2007
7049678 Diverse band gap energy level semiconductor device May. 23, 2006
7038248 Diverse band gap energy level semiconductor device May. 2, 2006
6998289 Multiple layer phase-change memory Feb. 14, 2006
6921912 Diode/superionic conductor/polymer memory structure Jul. 26, 2005
6686646 Diverse band gap energy level semiconductor device Feb. 3, 2004
6674115 Multiple layer phrase-change memory Jan. 6, 2004
6657278 Diverse band gap energy level semiconductor device Dec. 2, 2003
6649928 Method to selectively remove one side of a conductive bottom electrode of a phase-change memory cell and structure obtained thereby Nov. 18, 2003
6507061 Multiple layer phase-change memory Jan. 14, 2003
6252244 Memory cell having a reduced active area and a memory array incorporating the same Jun. 26, 2001
6225142 Memory cell having a reduced active area and a memory array incorporating the same May. 1, 2001
6087689 Memory cell having a reduced active area and a memory array incorporating the same Jul. 11, 2000
6031287 Contact structure and memory element incorporating the same Feb. 29, 2000
5751012 Polysilicon pillar diode for use in a non-volatile memory cell May. 12, 1998
5527745 Method of fabricating antifuses in an integrated circuit device and resulting structure Jun. 18, 1996
5363329 Semiconductor memory device for use in an electrically alterable read-only memory Nov. 8, 1994
5353246 Programmable semiconductor antifuse structure and method of fabricating Oct. 4, 1994
5322812 Improved method of fabricating antifuses in an integrated circuit device and resulting structure Jun. 21, 1994
5272359 Reversible non-volatile switch based on a TCNQ charge transfer complex Dec. 21, 1993
5272666 Programmable semiconductor antifuse structure and method of fabricating Dec. 21, 1993
5210598 Semiconductor element having a resistance state transition region of two-layer structure May. 11, 1993
4684972 Non-volatile amorphous semiconductor memory device utilizing a forming voltage Aug. 4, 1987
4665504 Memory device containing electrically conducting substrate having deposited hereon a layer of amorphous or microcrystalline silicon-carbon alloy and a layer of amorphous or microcrystalline May. 12, 1987
4665428 Semiconductor device May. 12, 1987
4646266 Programmable semiconductor structures and methods for using the same Feb. 24, 1987
4599705 Programmable cell for use in programmable electronic arrays Jul. 8, 1986
4567499 Memory device Jan. 28, 1986
4499557 Programmable cell for use in programmable electronic arrays Feb. 12, 1985

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