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Class Information
Number: 257/E29.329
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Semiconductors devices adapted for rectifying, amplifying, oscillating, or switching, capacitors, or resistors with at least one potential-jump barrier or surface barrier (epo) > Types of semiconductor device (epo) > Controllable only by variation of electric current supplied or only electric potential applied to electrode carrying current to be rectified, amplified, oscillated, or switched (epo) > Diode (epo) > Mesa pn junction diode (epo)
Description: This subclass is indented under subclass E29.327. This subclass is substantially the same in scope as ECLA classification H01L29/861C.

Patents under this class:

Patent Number Title Of Patent Date Issued
8513746 MEMS sensor and method for producing MEMS sensor, and MEMS package Aug. 20, 2013
8466045 Method of forming strained epitaxial carbon-doped silicon films Jun. 18, 2013
8426949 Mesa type semiconductor device Apr. 23, 2013
8350366 Power semiconductor element with two-stage impurity concentration profile Jan. 8, 2013
8217423 Structure and method for mobility enhanced MOSFETs with unalloyed silicide Jul. 10, 2012
8212327 High fill-factor laser-treated semiconductor device on bulk material with single side contact scheme Jul. 3, 2012
8053885 Wafer level vertical diode package structure and method for making the same Nov. 8, 2011
7989827 Multichip light emitting diode package Aug. 2, 2011
7952172 Semiconductor optical element May. 31, 2011
7936034 Mesa structure photon detection circuit May. 3, 2011
7791176 Power semiconductor component with trench-type second contact region Sep. 7, 2010
7507620 Low-capacity vertical diode Mar. 24, 2009
7381997 Lateral silicided diodes Jun. 3, 2008
7335927 Lateral silicided diodes Feb. 26, 2008
7288828 Metal oxide semiconductor transistor device Oct. 30, 2007
6924546 Low-capacity vertical diode Aug. 2, 2005
6667545 Rectifier diode with improved means for tension relief of the connected headwire Dec. 23, 2003
6646304 Universal semiconductor wafer for high-voltage semiconductor components Nov. 11, 2003
6083814 Method for producing a pn-junction for a semiconductor device of SiC Jul. 4, 2000
5930660 Method for fabricating diode with improved reverse energy characteristics Jul. 27, 1999
5640043 High voltage silicon diode with optimum placement of silicon-germanium layers Jun. 17, 1997
5610434 Mesa semiconductor structure Mar. 11, 1997
5345100 Semiconductor rectifier having high breakdown voltage and high speed operation Sep. 6, 1994
5164813 New diode structure Nov. 17, 1992
5038183 Diode used in reference potential generating circuit for dram Aug. 6, 1991
5010023 Method for fabricating a rectifying semiconductor junction having improved breakdown voltage characteristics Apr. 23, 1991
4960731 Method of making a power diode with high reverse voltage rating Oct. 2, 1990
4947218 P-N junction diodes in silicon carbide Aug. 7, 1990
4905071 Monolithic series-shunt diode switch Feb. 27, 1990
4891685 Rectifying P-N junction having improved breakdown voltage characteristics and method for fabricating same Jan. 2, 1990
4811080 Monolithic pin diode and method for its manufacture Mar. 7, 1989
4800420 Two-terminal semiconductor diode arrangement Jan. 24, 1989
4740477 Method for fabricating a rectifying P-N junction having improved breakdown voltage characteristics Apr. 26, 1988
4738933 Monolithic PIN diode and method for its manufacture Apr. 19, 1988
4371882 Process for preparing isolated junctions in thin-film semiconductors Feb. 1, 1983
4215358 Mesa type semiconductor device Jul. 29, 1980
4210472 Manufacturing process of semiconductor devices Jul. 1, 1980
4179794 Process of manufacturing semiconductor devices Dec. 25, 1979
4075650 Millimeter wave semiconductor device Feb. 21, 1978

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