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Class Information
Number: 257/E29.323
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Semiconductors devices adapted for rectifying, amplifying, oscillating, or switching, capacitors, or resistors with at least one potential-jump barrier or surface barrier (epo) > Types of semiconductor device (epo) > Controllable by variation of magnetic field applied to device (epo)
Description: This subclass is indented under subclass E29.166. This subclass is substantially the same in scope as ECLA classification H01L29/82.










Patents under this class:
1 2 3 4 5 6

Patent Number Title Of Patent Date Issued
8710604 Magnetoresistive element and manufacturing method of the same Apr. 29, 2014
8711613 Non-volatile flash-RAM memory with magnetic memory Apr. 29, 2014
8710602 Method and system for providing magnetic junctions having improved characteristics Apr. 29, 2014
8704319 Method and system for providing magnetic layers having insertion layers for use in spin transfer torque memories Apr. 22, 2014
8692343 MR enhancing layer (MREL) for spintronic devices Apr. 8, 2014
8692342 Magnetic memory devices having a uniform perpendicular nonmagnetic metal rich anisotropy enhanced pattern Apr. 8, 2014
8686523 Magnetoresistive device Apr. 1, 2014
8686520 Spin-torque magnetoresistive structures Apr. 1, 2014
8685757 Method for fabricating magnetic tunnel junction Apr. 1, 2014
8686524 Magnetic stack with oxide to reduce switching current Apr. 1, 2014
8687414 Magnetic memory element and magnetic random access memory Apr. 1, 2014
8680632 Magnetoresistive element and magnetic memory Mar. 25, 2014
8674465 MRAM device and integration techniques compatible with logic integration Mar. 18, 2014
8669628 Magnetoresistive element and magnetic memory using the same Mar. 11, 2014
8670268 Magnetoresistive element and magnetic memory using the same Mar. 11, 2014
8664010 Semiconductor device and manufacturing method of the semiconductor device Mar. 4, 2014
8664731 Strengthened micro-electromechanical system devices and methods of making thereof Mar. 4, 2014
8659104 Field-effect magnetic sensor Feb. 25, 2014
8659103 Magnetoresistive element and magnetic memory using the same Feb. 25, 2014
8659102 Nonvolatile magnetic memory device Feb. 25, 2014
8648434 Magnetic memory devices Feb. 11, 2014
8633037 Semiconductor device Jan. 21, 2014
8629520 Arrangements for an integrated sensor Jan. 14, 2014
8629519 Tunneling magnetoresistance sensor Jan. 14, 2014
8629518 Sacrifice layer structure and method for magnetic tunnel junction (MTJ) etching process Jan. 14, 2014
8618590 Spin transistor, integrated circuit, and magnetic memory Dec. 31, 2013
8609262 Structure and method to fabricate high performance MTJ devices for spin-transfer torque (STT)-RAM application Dec. 17, 2013
8604570 Integrated electronic device with transceiving antenna and magnetic interconnection Dec. 10, 2013
8604571 Thermoelectric conversion device Dec. 10, 2013
8604572 Magnetic tunnel junction device Dec. 10, 2013
8598671 Storage element, method for manufacturing storage element, and memory Dec. 3, 2013
8593862 Spin-transfer torque magnetic random access memory having magnetic tunnel junction with perpendicular magnetic anisotropy Nov. 26, 2013
8592930 Magnetic memory element, magnetic memory and initializing method Nov. 26, 2013
8592929 Symmetrically switchable spin-transfer-torque magnetoresistive device Nov. 26, 2013
8592927 Multilayers having reduced perpendicular demagnetizing field using moment dilution for spintronic applications Nov. 26, 2013
8587043 Magnetoresistive random access memory and method of manufacturing the same Nov. 19, 2013
8587044 Complementary logic device using spin injection Nov. 19, 2013
8575711 Storage element and memory Nov. 5, 2013
8564079 STT MRAM magnetic tunnel junction architecture and integration Oct. 22, 2013
8559214 Magnetic memory device and magnetic random access memory Oct. 15, 2013
8557610 Methods of integrated shielding into MTJ device for MRAM Oct. 15, 2013
8546151 Method for manufacturing magnetic storage device and magnetic storage device Oct. 1, 2013
8546896 Magnetic tunneling junction elements having magnetic substructures(s) with a perpendicular anisotropy and memories using such magnetic elements Oct. 1, 2013
8547730 Method and system for providing a spin tunneling magnetic element having a crystalline barrier layer Oct. 1, 2013
8542519 Semiconductor memory device Sep. 24, 2013
8541247 Non-volatile memory cell with lateral pinning Sep. 24, 2013
8541855 Co/Ni multilayers with improved out-of-plane anisotropy for magnetic device applications Sep. 24, 2013
8536668 Seed layer and free magnetic layer for perpindicular anisotropy in a spin-torque magnetic random access memory Sep. 17, 2013
8530987 Magnetic memory including a magnetoresistive element Sep. 10, 2013
8530988 Junction isolation for magnetic read sensor Sep. 10, 2013

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