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Class Information
Number: 257/E29.321
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Semiconductors devices adapted for rectifying, amplifying, oscillating, or switching, capacitors, or resistors with at least one potential-jump barrier or surface barrier (epo) > Types of semiconductor device (epo) > Controllable by only signal applied to control electrode (e.g., base of bipolar transistor, gate of field-effect transistor) (epo) > Unipolar device (epo) > Field-effect transistor (epo) > With field effect produced by pn or other rectifying junction gate (i.e., potential barrier) (epo) > With schottky gate (epo) > With recessed gate (epo)
Description: This subclass is indented under subclass E29.317. This subclass is substantially the same in scope as ECLA classification H01L29/812E.










Patents under this class:
1 2 3

Patent Number Title Of Patent Date Issued
8598653 FinFET having cross-hair cells Dec. 3, 2013
8476137 Methods of FinFET height control Jul. 2, 2013
7879659 Methods of fabricating semiconductor devices including dual fin structures Feb. 1, 2011
7838377 Power semiconductor devices with mesa structures and buffer layers including mesa steps Nov. 23, 2010
7834394 Semiconductor structure and method of fabricating the same Nov. 16, 2010
7728380 Semiconductor device Jun. 1, 2010
7692222 Atomic layer deposition in the formation of gate structures for III-V semiconductor Apr. 6, 2010
7691708 Trench type MOSgated device with strained layer on trench sidewall Apr. 6, 2010
7678535 Method for fabricating semiconductor device with recess gate Mar. 16, 2010
7675112 Semiconductor device with a surrounded channel transistor Mar. 9, 2010
7629242 Method for fabricating semiconductor device having recess gate Dec. 8, 2009
7608508 Method for manufacturing semiconductor device Oct. 27, 2009
7588985 Method for fabricating fin transistor Sep. 15, 2009
7485557 Method for fabricating semiconductor device having flask type recess gate Feb. 3, 2009
7388249 Semiconductor device having self-aligned gate pattern Jun. 17, 2008
7205195 Method for fabricating NROM memory cells with trench transistors Apr. 17, 2007
7067361 Methods of fabricating silicon carbide metal-semiconductor field effect transistors Jun. 27, 2006
6979871 Semiconductor device having T-shaped gate electrode and method of manufacturing the same Dec. 27, 2005
6956239 Transistors having buried p-type layers beneath the source region Oct. 18, 2005
6906350 Delta doped silicon carbide metal-semiconductor field effect transistors having a gate disposed in a double recess structure Jun. 14, 2005
6902964 Methods of fabricating delta doped silicon carbide metal-semiconductor field effect transistors having a gate disposed in a double recess structure Jun. 7, 2005
6686616 Silicon carbide metal-semiconductor field effect transistors Feb. 3, 2004
6656823 Semiconductor device with schottky contact and method for forming the same Dec. 2, 2003
6653667 GaAs-based semiconductor field-effect transistor Nov. 25, 2003
6586319 High-speed compound semiconductor device having a minimized parasitic capacitance and resistance Jul. 1, 2003
6559502 Semiconductor device May. 6, 2003
6534823 Semiconductor device Mar. 18, 2003
6483135 Field effect transistor Nov. 19, 2002
6458640 GaAs MESFET having LDD and non-uniform P-well doping profiles Oct. 1, 2002
6417035 Method for manufacturing a field effect transistor Jul. 9, 2002
6399430 Field effect transistor and method of manufacturing the same Jun. 4, 2002
6373081 Field effect transistor and method of fabricating the same Apr. 16, 2002
6278144 Field-effect transistor and method for manufacturing the field effect transistor Aug. 21, 2001
6262444 Field-effect semiconductor device with a recess profile Jul. 17, 2001
6255679 Field effect transistor which can operate stably in millimeter wave band Jul. 3, 2001
6222210 Complementary heterostructure integrated single metal transistor apparatus Apr. 24, 2001
6172384 Field effect transistor and a method for manufacturing a same Jan. 9, 2001
6163041 Field effect transistor and method of manufacturing the same Dec. 19, 2000
6100547 Field effect type semiconductor device and method of fabricating the same Aug. 8, 2000
6100555 Semiconductor device having a photosensitive organic film, and process for producing the same Aug. 8, 2000
6066865 Single layer integrated metal enhancement mode field-effect transistor apparatus May. 23, 2000
6037615 Metal semiconductor FET having doped A1GaAs layer between channel layer and A1GaAs buffer layer Mar. 14, 2000
6033942 Method of forming a metal-semiconductor field effect transistors having improved intermodulation distortion using different pinch-off voltages Mar. 7, 2000
6013926 Semiconductor device with refractory metal element Jan. 11, 2000
5994725 MOSFET having Schottky gate and bipolar device Nov. 30, 1999
5939737 High-speed compound semiconductor device having a minimized parasitic capacitance and resistance Aug. 17, 1999
5925895 Silicon carbide power MESFET with surface effect supressive layer Jul. 20, 1999
5925903 Field-effect transistors and method of manufacturing the same Jul. 20, 1999
5905277 Field-effect transistor and method of manufacturing the same May. 18, 1999
5888859 Method of fabricating semiconductor device Mar. 30, 1999

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