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Class Information
Number: 257/E29.32
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Semiconductors devices adapted for rectifying, amplifying, oscillating, or switching, capacitors, or resistors with at least one potential-jump barrier or surface barrier (epo) > Types of semiconductor device (epo) > Controllable by only signal applied to control electrode (e.g., base of bipolar transistor, gate of field-effect transistor) (epo) > Unipolar device (epo) > Field-effect transistor (epo) > With field effect produced by pn or other rectifying junction gate (i.e., potential barrier) (epo) > With schottky gate (epo) > Thin-film mesfet (epo)
Description: This subclass is indented under subclass E29.317. This subclass is substantially the same in scope as ECLA classification H01L29/812D.










Patents under this class:

Patent Number Title Of Patent Date Issued
8450713 Nonvolatile semiconductor memory device and manufacturing method for same May. 28, 2013
8410531 Thin film transistor having Schottky barrier Apr. 2, 2013
8129803 Micromachined microphone and multisensor and method for producing same Mar. 6, 2012
8063420 Field-effect transistor and method of manufacturing the same Nov. 22, 2011
7939865 Metal semiconductor field effect transistor (MESFET) silicon-on-insulator structure having partial trench spacers May. 10, 2011
7932519 Pixel structure Apr. 26, 2011
7923732 Thin film transistor and method for manufacturing a display panel Apr. 12, 2011
7825412 Display device Nov. 2, 2010
7804097 Liquid crystal display device Sep. 28, 2010
7772620 Junction field effect transistor using a silicon on insulator architecture Aug. 10, 2010
7566904 Thin film transistor having oxide semiconductor layer and manufacturing method thereof Jul. 28, 2009
7465978 Field effect transistor with a high breakdown voltage and method of manufacturing the same Dec. 16, 2008
7307329 Electronic device with guard ring Dec. 11, 2007
7304329 Field effect transistor Dec. 4, 2007
6797990 Boron phosphide-based semiconductor device and production method thereof Sep. 28, 2004
6765241 Group III nitride semiconductor device of field effect transistor type having reduced parasitic capacitances Jul. 20, 2004
6737683 Semiconductor device composed of a group III-V nitride semiconductor May. 18, 2004
6577010 Stepped photoresist profile and opening formed using the profile Jun. 10, 2003
6534822 Silicon on insulator field effect transistor with a double Schottky gate structure Mar. 18, 2003
6455880 Microwave semiconductor device having coplanar waveguide and micro-strip line Sep. 24, 2002
6440862 Stepped photoresist profile and opening formed using the profile Aug. 27, 2002
6200906 Stepped photoresist profile and opening formed using the profile Mar. 13, 2001
5891757 Method for forming a field-effect transistor having difference in capacitance between source and drain with respect to shield layer Apr. 6, 1999
5804847 Backside illuminated FET optical receiver with gallium arsenide species Sep. 8, 1998
5663075 Method of fabricating backside illuminated FET optical receiver with gallium arsenide species Sep. 2, 1997
5633513 Diamond film field effect transistor May. 27, 1997
5448084 Field effect transistors on spinel substrates Sep. 5, 1995
5436499 High performance gaas devices and method Jul. 25, 1995
5420059 Method of making a high performance MESFET with multiple quantum wells May. 30, 1995
5401665 Method of fabricating a field-effect transistor over gate electrode Mar. 28, 1995
5323020 High performance MESFET with multiple quantum wells Jun. 21, 1994
5302842 Field-effect transistor formed over gate electrode Apr. 12, 1994
5252842 Low-loss semiconductor device and backside etching method for manufacturing same Oct. 12, 1993
5135885 Method of manufacturing silicon carbide FETS Aug. 4, 1992
5075746 Thin film field effect transistor and a method of manufacturing the same Dec. 24, 1991
5032472 Films of catenated phosphorus materials, their preparation and use, and semiconductor and other devices employing them Jul. 16, 1991
5030583 Method of making single crystal semiconductor substrate articles and semiconductor device Jul. 9, 1991
5006914 Single crystal semiconductor substrate articles and semiconductor devices comprising same Apr. 9, 1991
4732659 Sputtering method for making thin film field effect transistor utilizing a polypnictide semiconductor Mar. 22, 1988
4719501 Semiconductor device having junction formed from two different hydrogenated polycrystalline silicon layers Jan. 12, 1988
4679062 Thin film transistor Jul. 7, 1987
4558340 Thin film field effect transistors utilizing a polypnictide semiconductor Dec. 10, 1985
4393578 Method of making silicon-on-sapphire FET Jul. 19, 1983
4325073 Field effect devices and their fabrication Apr. 13, 1982
4317125 Field effect devices and their fabrication Feb. 23, 1982
4277883 Integrated circuit manufacturing method Jul. 14, 1981
4136352 Field-effect structures Jan. 23, 1979
4065782 Field-effect transistors Dec. 27, 1977











 
 
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