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Class Information
Number: 257/E29.319
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Semiconductors devices adapted for rectifying, amplifying, oscillating, or switching, capacitors, or resistors with at least one potential-jump barrier or surface barrier (epo) > Types of semiconductor device (epo) > Controllable by only signal applied to control electrode (e.g., base of bipolar transistor, gate of field-effect transistor) (epo) > Unipolar device (epo) > Field-effect transistor (epo) > With field effect produced by pn or other rectifying junction gate (i.e., potential barrier) (epo) > With schottky gate (epo) > With multiple gate (epo)
Description: This subclass is indented under subclass E29.317. This subclass is substantially the same in scope as ECLA classification H01L29/812C.

Patents under this class:
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Patent Number Title Of Patent Date Issued
8610178 Semiconductor device having a fuse element Dec. 17, 2013
8441048 Horizontally depleted metal semiconductor field effect transistor May. 14, 2013
8362524 Semiconductor device having a fuse element Jan. 29, 2013
8334178 High breakdown voltage double-gate semiconductor device Dec. 18, 2012
8241928 Test structure and method for detecting charge effects during semiconductor processing Aug. 14, 2012
8217456 Low capacitance hi-K dual work function metal gate body-contacted field effect transistor Jul. 10, 2012
8211771 Multiple-gate transistors and processes of making same Jul. 3, 2012
8063447 Multiple-gate transistors and processes of making same Nov. 22, 2011
7994544 Semiconductor device having a fuse element Aug. 9, 2011
7973344 Double gate JFET with reduced area consumption and fabrication method therefor Jul. 5, 2011
7824977 Completely decoupled high voltage and low voltage transistor manufacturing processes Nov. 2, 2010
7772620 Junction field effect transistor using a silicon on insulator architecture Aug. 10, 2010
7763914 Semiconductor device for high frequency Jul. 27, 2010
7763531 Method and structure to process thick and thin fins and variable fin to fin spacing Jul. 27, 2010
7759760 Semiconductor switching element and semiconductor circuit apparatus Jul. 20, 2010
7759194 Electrically programmable device with embedded EEPROM and method for making thereof Jul. 20, 2010
7569882 Non-volatile multibit memory cell and method of manufacturing thereof Aug. 4, 2009
7348630 Semiconductor device for high frequency uses and manufacturing method of the same Mar. 25, 2008
7161197 RF switching circuit for use in mobile communication systems Jan. 9, 2007
7091566 Dual gate FinFet Aug. 15, 2006
6285046 Controllable semiconductor structure with improved switching properties Sep. 4, 2001
6262451 Electrode structure for transistors, non-volatile memories and the like Jul. 17, 2001
6160280 Field effect transistor Dec. 12, 2000
5994725 MOSFET having Schottky gate and bipolar device Nov. 30, 1999
5994727 High performance gaas field effect transistor structure Nov. 30, 1999
5872369 Solid-state antenna switch and field-effect transistor Feb. 16, 1999
5856681 Semiconductor device Jan. 5, 1999
5808332 Field-effect semiconductor device Sep. 15, 1998
5804849 Compound semiconductor device and method of manufacture Sep. 8, 1998
5804475 Method of forming an interband lateral resonant tunneling transistor Sep. 8, 1998
5786610 Field effect transistor Jul. 28, 1998
5773334 Method of manufacturing a semiconductor device Jun. 30, 1998
5665618 Method of forming an interband lateral resonant tunneling transistor with single narrow gate electrode Sep. 9, 1997
5654558 Interband lateral resonant tunneling transistor Aug. 5, 1997
5602501 Mixer circuit using a dual gate field effect transistor Feb. 11, 1997
5455441 Semiconductor device having a structure for accelerating carriers Oct. 3, 1995
5428232 Field effect transistor apparatus Jun. 27, 1995
5389807 Field effect transistor Feb. 14, 1995
5360755 Method of manufacturing a dual field effect transistor Nov. 1, 1994
5350702 Method for fabricating a dual-gate metal-semiconductor field effect transistor Sep. 27, 1994
5311156 High frequency double pole double throw switch May. 10, 1994
5309007 Junction field effect transistor with lateral gate voltage swing (GVS-JFET) May. 3, 1994
5309006 FET crossbar switch device particularly useful for microwave applications May. 3, 1994
5306650 Method of making silicon MESFET for dielectrically isolated integrated circuits Apr. 26, 1994
5274256 Microwave FET Dec. 28, 1993
5252842 Low-loss semiconductor device and backside etching method for manufacturing same Oct. 12, 1993
5225703 Dual field effect transistor structure employing a single source region Jul. 6, 1993
5079620 Split-gate field effect transistor Jan. 7, 1992
5070376 Semiconductor device Dec. 3, 1991
5065132 Programmable resistor and an array of the same Nov. 12, 1991

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