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Class Information
Number: 257/E29.318
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Semiconductors devices adapted for rectifying, amplifying, oscillating, or switching, capacitors, or resistors with at least one potential-jump barrier or surface barrier (epo) > Types of semiconductor device (epo) > Controllable by only signal applied to control electrode (e.g., base of bipolar transistor, gate of field-effect transistor) (epo) > Unipolar device (epo) > Field-effect transistor (epo) > With field effect produced by pn or other rectifying junction gate (i.e., potential barrier) (epo) > With schottky gate (epo) > Vertical transistors (epo)
Description: This subclass is indented under subclass E29.317. This subclass is substantially the same in scope as ECLA classification H01L29/812B.

Patents under this class:
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Patent Number Title Of Patent Date Issued
8648398 Electronic device and a transistor including a trench and a sidewall doped region Feb. 11, 2014
8564048 Contact barrier modulation of field effect transistors Oct. 22, 2013
8519475 Semiconductor device Aug. 27, 2013
8378417 Semiconductor device including a well potential supply device and a vertical MOS transistor Feb. 19, 2013
8253163 High voltage semiconductor device including a free wheel diode Aug. 28, 2012
8143670 Self aligned field effect transistor structure Mar. 27, 2012
8138605 Multiple layer barrier metal for device component formed in contact trench Mar. 20, 2012
8102012 Transistor component having a shielding structure Jan. 24, 2012
8039346 Insulated gate silicon carbide semiconductor device and method for manufacturing the same Oct. 18, 2011
8022482 Device configuration of asymmetrical DMOSFET with schottky barrier source Sep. 20, 2011
7999309 Semiconductor device Aug. 16, 2011
7910983 MOS transistor having an increased gate-drain capacitance Mar. 22, 2011
7872285 Vertical gallium nitride semiconductor device and epitaxial substrate Jan. 18, 2011
7679133 Vertical-type non-volatile memory devices Mar. 16, 2010
7670911 Method for manufacturing vertical MOS transistor Mar. 2, 2010
7663184 Memory and method of fabricating the same Feb. 16, 2010
7622796 Semiconductor package having a bridged plate interconnection Nov. 24, 2009
7586130 Vertical field effect transistor using linear structure as a channel region and method for fabricating the same Sep. 8, 2009
7560773 Semiconductor device Jul. 14, 2009
7510955 Method of fabricating multi-fin field effect transistor Mar. 31, 2009
7276754 Annular gate and technique for fabricating an annular gate Oct. 2, 2007
7045397 JFET and MESFET structures for low voltage high current and high frequency applications May. 16, 2006
6921932 JFET and MESFET structures for low voltage, high current and high frequency applications Jul. 26, 2005
6900506 Method and structure for a high voltage junction field effect transistor May. 31, 2005
6833571 Transistor device including buried source Dec. 21, 2004
6774434 Field effect device having a drift region and field shaping region used as capacitor dielectric Aug. 10, 2004
6693322 Semiconductor construction with buried island region and contact region Feb. 17, 2004
6600194 Field-effect semiconductor devices Jul. 29, 2003
6396085 GaN-type semiconductor vertical field effect transistor May. 28, 2002
6337508 Transistor with a quantum-wave interference layer Jan. 8, 2002
6320223 Electronic device comprising a trench gate field effect device Nov. 20, 2001
6309918 Manufacturable GaAs VFET process Oct. 30, 2001
6285046 Controllable semiconductor structure with improved switching properties Sep. 4, 2001
6100554 High-frequency semiconductor device Aug. 8, 2000
6075259 Power semiconductor devices that utilize buried insulating regions to achieve higher than parallel-plane breakdown voltages Jun. 13, 2000
6034385 Current-limiting semiconductor configuration Mar. 7, 2000
5963807 Silicon carbide field effect transistor with increased avalanche withstand capability Oct. 5, 1999
5950076 Methods of forming silicon carbide semiconductor devices having buried silicon carbide conduction barrier layers therein Sep. 7, 1999
5895939 Silicon carbide field effect transistor with increased avalanche withstand capability Apr. 20, 1999
5811831 Semiconductor device exploiting a quantum interference effect Sep. 22, 1998
5681762 Methods of forming silicon carbide semiconductor devices having buried silicon carbide conduction barrier layers therein Oct. 28, 1997
5612547 Silicon carbide static induction transistor Mar. 18, 1997
5599724 FET having part of active region formed in semiconductor layer in through hole formed in gate electrode and method for manufacturing the same Feb. 4, 1997
5557141 Method of doping, semiconductor device, and method of fabricating semiconductor device Sep. 17, 1996
5543637 Silicon carbide semiconductor devices having buried silicon carbide conduction barrier layers therein Aug. 6, 1996
5521403 Field-effect transistor having a graded contact layer May. 28, 1996
5455441 Semiconductor device having a structure for accelerating carriers Oct. 3, 1995
5449930 High power, compound semiconductor device and fabrication process Sep. 12, 1995
5391895 Double diamond mesa vertical field effect transistor Feb. 21, 1995
5350709 Method of doping a group III-V compound semiconductor Sep. 27, 1994

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