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Class Information
Number: 257/E29.317
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Semiconductors devices adapted for rectifying, amplifying, oscillating, or switching, capacitors, or resistors with at least one potential-jump barrier or surface barrier (epo) > Types of semiconductor device (epo) > Controllable by only signal applied to control electrode (e.g., base of bipolar transistor, gate of field-effect transistor) (epo) > Unipolar device (epo) > Field-effect transistor (epo) > With field effect produced by pn or other rectifying junction gate (i.e., potential barrier) (epo) > With schottky gate (epo)
Description: This subclass is indented under subclass E29.31. This subclass is substantially the same in scope as ECLA classification H01L29/812.

Sub-classes under this class:

Class Number Class Name Patents
257/E29.32 Thin-film mesfet (epo) 48
257/E29.318 Vertical transistors (epo) 88
257/E29.319 With multiple gate (epo) 85
257/E29.321 With recessed gate (epo) 131

Patents under this class:
1 2 3 4 5 6 7

Patent Number Title Of Patent Date Issued
8643062 III-N device structures and methods Feb. 4, 2014
8587027 Field effect transistor, method of manufacturing the same, and semiconductor device Nov. 19, 2013
8519452 Semiconductor device with junction field-effect transistor and manufacturing method of the same Aug. 27, 2013
8298840 Dual sided processing and devices based on freestanding nitride and zinc oxide films Oct. 30, 2012
8174048 III-nitride current control device and method of manufacture May. 8, 2012
8120072 JFET devices with increased barrier height and methods of making same Feb. 21, 2012
8067788 Semiconductor device Nov. 29, 2011
7972913 Method for forming a Schottky diode Jul. 5, 2011
7973344 Double gate JFET with reduced area consumption and fabrication method therefor Jul. 5, 2011
7973368 Semiconductor device with T-gate electrode Jul. 5, 2011
7952117 Field-effect transistor May. 31, 2011
7943972 Methods of fabricating transistors having buried P-type layers coupled to the gate May. 17, 2011
7923273 Stackable optoelectronics chip-to-chip interconnects and method of manufacturing Apr. 12, 2011
7759760 Semiconductor switching element and semiconductor circuit apparatus Jul. 20, 2010
7646043 Transistors having buried p-type layers coupled to the gate Jan. 12, 2010
7598548 Semiconductor device and field-effect transistor Oct. 6, 2009
7510953 Integrated fet and schottky device Mar. 31, 2009
7485514 Method for fabricating a MESFET Feb. 3, 2009
7485916 Dynamic control of capacitance elements in field effect structures Feb. 3, 2009
7323376 Method for fabricating a semiconductor device including a group III nitride semiconductor Jan. 29, 2008
7307314 LDMOS transistor with improved gate shield Dec. 11, 2007
7074681 Semiconductor component and method of manufacturing Jul. 11, 2006
7067361 Methods of fabricating silicon carbide metal-semiconductor field effect transistors Jun. 27, 2006
7030003 Compound semiconductor device, production method thereof, light-emitting device and transistor Apr. 18, 2006
7009209 Silicon carbide and related wide-bandgap transistors on semi-insulating epitaxy for high-speed, high-power applications Mar. 7, 2006
7005688 Semiconductor device with impurity layer to prevent depletion layer expansion Feb. 28, 2006
6998679 Semiconductor device and method of fabricating the same Feb. 14, 2006
6989553 Semiconductor device having an active region of alternating layers Jan. 24, 2006
6987292 Schottky junction transistors and complementary circuits including the same Jan. 17, 2006
6982441 Semiconductor device with a super lattice buffer Jan. 3, 2006
6974751 Semiconductor device and method for producing the same Dec. 13, 2005
6956239 Transistors having buried p-type layers beneath the source region Oct. 18, 2005
6939781 Method of manufacturing a semiconductor component that includes self-aligning a gate electrode to a field plate Sep. 6, 2005
6903392 Semiconductor device and its manufacturing method Jun. 7, 2005
6873828 Compound semiconductor switching device for high frequency switching Mar. 29, 2005
6864131 Complementary Schottky junction transistors and methods of forming the same Mar. 8, 2005
6852612 Semiconductor device and method for fabricating the same Feb. 8, 2005
6833556 Insulated gate field effect transistor having passivated schottky barriers to the channel Dec. 21, 2004
6822307 Semiconductor triode device having a compound-semiconductor channel layer Nov. 23, 2004
6809352 Palladium silicide (PdSi) schottky electrode for gallium nitride semiconductor devices Oct. 26, 2004
6787910 Schottky structure in GaAs semiconductor device Sep. 7, 2004
6787821 Compound semiconductor device having a mesfet that raises the maximum mutual conductance and changes the mutual conductance Sep. 7, 2004
6774434 Field effect device having a drift region and field shaping region used as capacitor dielectric Aug. 10, 2004
6770902 Charge carrier extracting transistor Aug. 3, 2004
6770536 Process for semiconductor device fabrication in which a insulating layer is formed on a semiconductor substrate Aug. 3, 2004
6770912 Semiconductor device and method for producing the same Aug. 3, 2004
6768147 Semiconductor device and method of fabricating the same Jul. 27, 2004
6734496 Semiconductor device May. 11, 2004
6734476 Semiconductor devices having group III-V compound layers May. 11, 2004
6730987 Compound semiconductor device, production method thereof, light-emitting device and transistor May. 4, 2004

1 2 3 4 5 6 7

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