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Class Information
Number: 257/E29.315
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Semiconductors devices adapted for rectifying, amplifying, oscillating, or switching, capacitors, or resistors with at least one potential-jump barrier or surface barrier (epo) > Types of semiconductor device (epo) > Controllable by only signal applied to control electrode (e.g., base of bipolar transistor, gate of field-effect transistor) (epo) > Unipolar device (epo) > Field-effect transistor (epo) > With field effect produced by pn or other rectifying junction gate (i.e., potential barrier) (epo) > With heterojunction gate (e.g., transistors with semiconductor layer acting as gate insulating layer) (epo)
Description: This subclass is indented under subclass E29.31. This subclass is substantially the same in scope as ECLA classification H01L29/80B.










Sub-classes under this class:

Class Number Class Name Patents
257/E29.316 Programmable transistor (e.g., with charge-trapping quantum well) (epo) 23


Patents under this class:
1 2 3 4

Patent Number Title Of Patent Date Issued
8710549 MOS device for eliminating floating body effects and self-heating effects Apr. 29, 2014
8575658 Semiconductor device and method for manufacturing same Nov. 5, 2013
8536620 Integrated circuit including a hetero-interface and self adjusted diffusion method for manufacturing the same Sep. 17, 2013
8525229 Semiconductor device Sep. 3, 2013
8404508 Enhancement mode GaN HEMT device and method for fabricating the same Mar. 26, 2013
8378389 Semiconductor device and method for manufacturing same Feb. 19, 2013
8222681 Bipolar semiconductor device and manufacturing method Jul. 17, 2012
8120072 JFET devices with increased barrier height and methods of making same Feb. 21, 2012
8120074 Bipolar semiconductor device and manufacturing method Feb. 21, 2012
8004011 Field effect transistor Aug. 23, 2011
7612362 Nitride semiconductor light emitting device Nov. 3, 2009
7608516 Semiconductor pixel arrays with reduced sensitivity to defects Oct. 27, 2009
7601993 Semiconductor device having ohmic recessed electrode Oct. 13, 2009
7534689 Stress enhanced MOS transistor and methods for its fabrication May. 19, 2009
7193280 Indium oxide conductive film structures Mar. 20, 2007
7071065 Strained silicon PMOS having silicon germanium source/drain extensions and method for its fabrication Jul. 4, 2006
7030465 Semiconductor device that can increase the carrier mobility and method for fabricating the same Apr. 18, 2006
7022530 Semiconductor device and method for fabricating the same Apr. 4, 2006
7015120 Method of fabricating semiconductor devices employing at least one modulation doped quantum well structure and one or more etch stop layers for accurate contact formation Mar. 21, 2006
7012286 Heterojunction field effect transistor Mar. 14, 2006
7009209 Silicon carbide and related wide-bandgap transistors on semi-insulating epitaxy for high-speed, high-power applications Mar. 7, 2006
6995407 Photonic digital-to-analog converter employing a plurality of heterojunction thyristor devices Feb. 7, 2006
6989556 Metal oxide compound semiconductor integrated transistor devices with a gate insulator structure Jan. 24, 2006
6984844 Semiconductor device having heterojunction type MIS transistor which can operate at reduced voltage while maintaining high operation speed Jan. 10, 2006
6974969 P-type quantum-well-base bipolar transistor device employing interdigitated base and emitter formed with a capping layer Dec. 13, 2005
6954473 Optoelectronic device employing at least one semiconductor heterojunction thyristor for producing variable electrical/optical delay Oct. 11, 2005
6936875 Insulated-gate field-effect transistor, method of fabricating same, and semiconductor device employing same Aug. 30, 2005
6936900 Integrated transistor devices Aug. 30, 2005
6927414 High speed lateral heterojunction MISFETs realized by 2-dimensional bandgap engineering and methods thereof Aug. 9, 2005
6919590 Heterojunction bipolar transistor with monolithically integrated junction field effect transistor and method of manufacturing same Jul. 19, 2005
6916727 Enhancement of P-type metal-oxide-semiconductor field effect transistors Jul. 12, 2005
6914301 CMOS integrated circuit devices and substrates having buried silicon germanium layers therein and methods of forming same Jul. 5, 2005
6905934 Semiconductor device and a method of manufacturing the same Jun. 14, 2005
6903385 Semiconductor structure having a textured nitride-based layer Jun. 7, 2005
6900482 Semiconductor device having divided active regions with comb-teeth electrodes thereon May. 31, 2005
6900103 Relaxed silicon germanium platform for high speed CMOS electronics and high speed analog circuits May. 31, 2005
6897495 Field effect transistor and manufacturing method therefor May. 24, 2005
6893947 Advanced RF enhancement-mode FETs with improved gate properties May. 17, 2005
6876045 Semiconductor device and process for manufacturing the same Apr. 5, 2005
6872989 Semiconductor device and method for fabricating the same Mar. 29, 2005
6873273 Photonic serial digital-to-analog converter employing a heterojunction thyristor device Mar. 29, 2005
6872625 Field-effect transistor based on embedded cluster structures and process for its production Mar. 29, 2005
6869897 Manufacturing method for semiconductor substrate, and semiconductor device having a strained Si layer Mar. 22, 2005
6852602 Semiconductor crystal film and method for preparation thereof Feb. 8, 2005
6853014 Optoelectronic circuit employing a heterojunction thyristor device that performs high speed sampling Feb. 8, 2005
6852600 Strained silicon MOSFET having silicon source/drain regions and method for its fabrication Feb. 8, 2005
6844227 Semiconductor devices and method for manufacturing the same Jan. 18, 2005
6841430 Semiconductor and fabrication method thereof Jan. 11, 2005
6841795 Semiconductor devices employing at least one modulation doped quantum well structure and one or more etch stop layers for accurate contact formation Jan. 11, 2005
6838728 Buried-channel devices and substrates for fabrication of semiconductor-based devices Jan. 4, 2005

1 2 3 4










 
 
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