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Class Information
Number: 257/E29.313
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Semiconductors devices adapted for rectifying, amplifying, oscillating, or switching, capacitors, or resistors with at least one potential-jump barrier or surface barrier (epo) > Types of semiconductor device (epo) > Controllable by only signal applied to control electrode (e.g., base of bipolar transistor, gate of field-effect transistor) (epo) > Unipolar device (epo) > Field-effect transistor (epo) > With field effect produced by pn or other rectifying junction gate (i.e., potential barrier) (epo) > With pn junction gate (e.g., pn homojunction gate) (epo) > Vertical transistors (epo)
Description: This subclass is indented under subclass E29.312. This subclass is substantially the same in scope as ECLA classification H01L29/808B.










Patents under this class:
1 2 3

Patent Number Title Of Patent Date Issued
8659057 Self-aligned semiconductor devices with reduced gate-source leakage under reverse bias and methods of making Feb. 25, 2014
8604540 Semiconductor device and method of manufacturing the same Dec. 10, 2013
8564048 Contact barrier modulation of field effect transistors Oct. 22, 2013
8536642 Semiconductor device and method for manufacturing the same Sep. 17, 2013
8525223 Silicon carbide semiconductor device Sep. 3, 2013
8519475 Semiconductor device Aug. 27, 2013
8378417 Semiconductor device including a well potential supply device and a vertical MOS transistor Feb. 19, 2013
8354678 Structure and method for forming a light detecting diode and a light emitting diode on a silicon-on-insulator wafer backside Jan. 15, 2013
8222681 Bipolar semiconductor device and manufacturing method Jul. 17, 2012
8202772 Vertical junction field effect transistors having sloped sidewalls and methods of making Jun. 19, 2012
8138605 Multiple layer barrier metal for device component formed in contact trench Mar. 20, 2012
8120074 Bipolar semiconductor device and manufacturing method Feb. 21, 2012
8058655 Vertical junction field effect transistors having sloped sidewalls and methods of making Nov. 15, 2011
7932572 Semiconductor device having memory element with stress insulating film Apr. 26, 2011
7910983 MOS transistor having an increased gate-drain capacitance Mar. 22, 2011
7772621 Semiconductor device with structured current spread region and method Aug. 10, 2010
7750377 Vertical junction field effect transistors, and methods of producing the vertical junction field effect transistors Jul. 6, 2010
7709889 Semiconductor device with improved breakdown properties and manufacturing method thereof May. 4, 2010
7704836 Method of fabricating super trench MOSFET including buried source electrode Apr. 27, 2010
7679133 Vertical-type non-volatile memory devices Mar. 16, 2010
7670911 Method for manufacturing vertical MOS transistor Mar. 2, 2010
7663184 Memory and method of fabricating the same Feb. 16, 2010
7586130 Vertical field effect transistor using linear structure as a channel region and method for fabricating the same Sep. 8, 2009
7510955 Method of fabricating multi-fin field effect transistor Mar. 31, 2009
7489011 Semiconductor device containing dielectrically isolated PN junction for enhanced breakdown characteristics Feb. 10, 2009
7405452 Semiconductor device containing dielectrically isolated PN junction for enhanced breakdown characteristics Jul. 29, 2008
7279368 Method of manufacturing a vertical junction field effect transistor having an epitaxial gate Oct. 9, 2007
7276754 Annular gate and technique for fabricating an annular gate Oct. 2, 2007
7071503 Semiconductor structure with a switch element and an edge element Jul. 4, 2006
7045397 JFET and MESFET structures for low voltage high current and high frequency applications May. 16, 2006
7033877 Vertical replacement-gate junction field-effect transistor Apr. 25, 2006
7005678 Silicon carbide semiconductor device having junction field effect transistor and method for manufacturing the same Feb. 28, 2006
6995052 Method and structure for double dose gate in a JFET Feb. 7, 2006
6940126 Field-effect-controllable semiconductor component and method for producing the semiconductor component Sep. 6, 2005
6921932 JFET and MESFET structures for low voltage, high current and high frequency applications Jul. 26, 2005
6909125 Implant-controlled-channel vertical JFET Jun. 21, 2005
6900506 Method and structure for a high voltage junction field effect transistor May. 31, 2005
6878993 Self-aligned trench MOS junction field-effect transistor for high-frequency applications Apr. 12, 2005
6870189 Pinch-off type vertical junction field effect transistor and method of manufacturing the same Mar. 22, 2005
6861678 Double diffused vertical JFET Mar. 1, 2005
6855981 Silicon carbide power device having protective diode Feb. 15, 2005
6853006 Silicon carbide semiconductor device Feb. 8, 2005
6841812 Double-gated vertical junction field effect power transistor Jan. 11, 2005
6822275 Transverse junction field effect transistor Nov. 23, 2004
6818939 Vertical compound semiconductor field effect transistor structure Nov. 16, 2004
6812079 Method for a junction field effect transistor with reduced gate capacitance Nov. 2, 2004
6777722 Method and structure for double dose gate in a JFET Aug. 17, 2004
6765262 Vertical high-voltage semiconductor component Jul. 20, 2004
6696706 Structure and method for a junction field effect transistor with reduced gate capacitance Feb. 24, 2004
6693322 Semiconductor construction with buried island region and contact region Feb. 17, 2004

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