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Class Information
Number: 257/E29.312
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Semiconductors devices adapted for rectifying, amplifying, oscillating, or switching, capacitors, or resistors with at least one potential-jump barrier or surface barrier (epo) > Types of semiconductor device (epo) > Controllable by only signal applied to control electrode (e.g., base of bipolar transistor, gate of field-effect transistor) (epo) > Unipolar device (epo) > Field-effect transistor (epo) > With field effect produced by pn or other rectifying junction gate (i.e., potential barrier) (epo) > With pn junction gate (e.g., pn homojunction gate) (epo)
Description: This subclass is indented under subclass E29.31. This subclass is substantially the same in scope as ECLA classification H01L29/808.










Sub-classes under this class:

Class Number Class Name Patents
257/E29.314 Thin-film jfet (epo) 44
257/E29.313 Vertical transistors (epo) 128


Patents under this class:
1 2 3 4

Patent Number Title Of Patent Date Issued
8587036 Non-volatile memory and fabricating method thereof Nov. 19, 2013
8421127 Semiconductor device and method for fabricating the same Apr. 16, 2013
8390039 Junction field effect transistor Mar. 5, 2013
8384137 Semiconductor device Feb. 26, 2013
8278691 Low power memory device with JFET device structures Oct. 2, 2012
8232585 JFET devices with PIN gate stacks Jul. 31, 2012
8110857 Low noise JFET Feb. 7, 2012
8035138 Junction field effect transistor and production method for the same Oct. 11, 2011
8004022 Field effect transistor Aug. 23, 2011
7973344 Double gate JFET with reduced area consumption and fabrication method therefor Jul. 5, 2011
7944017 Semiconductor device and manufacturing method of the same May. 17, 2011
7915107 Integrated circuit using complementary junction field effect transistor and MOS transistor in silicon and silicon alloys Mar. 29, 2011
7847401 Methods, systems and structures for forming semiconductor structures incorporating high-temperature processing steps Dec. 7, 2010
7713804 Method of forming an oxide isolated metal silicon-gate JFET May. 11, 2010
7633101 Oxide isolated metal silicon-gate JFET Dec. 15, 2009
7615809 Junction field effect transistor and method of manufacturing the same Nov. 10, 2009
7569874 Device and method of manufacture for a low noise junction field effect transistor Aug. 4, 2009
7528426 Lateral junction field-effect transistor May. 5, 2009
7049644 Lateral junction field effect transistor and method of manufacturing the same May. 23, 2006
7023033 Lateral junction field-effect transistor Apr. 4, 2006
7009229 Electrostatic discharge protection device for integrated circuits Mar. 7, 2006
6984869 High performance diode implanted voltage controlled p-type diffusion resistor Jan. 10, 2006
6870189 Pinch-off type vertical junction field effect transistor and method of manufacturing the same Mar. 22, 2005
6861303 JFET structure for integrated circuit and fabrication method Mar. 1, 2005
6825529 Stress inducing spacers Nov. 30, 2004
6822275 Transverse junction field effect transistor Nov. 23, 2004
6773936 Method of reducing low-frequency noise for semiconductor devices and circuits Aug. 10, 2004
6771112 Semiconductor integrated circuit having pads with less input signal attenuation Aug. 3, 2004
6734496 Semiconductor device May. 11, 2004
6724040 Semiconductor device Apr. 20, 2004
6720615 Vertical-type MIS semiconductor device Apr. 13, 2004
6700157 Semiconductor device Mar. 2, 2004
6627948 Vertical layer type semiconductor device Sep. 30, 2003
6566709 Semiconductor device May. 20, 2003
6545340 Semiconductor device Apr. 8, 2003
6503782 Complementary accumulation-mode JFET integrated circuit topology using wide (>2eV) bandgap semiconductors Jan. 7, 2003
6486520 Structure and method for a large-permittivity gate using a germanium layer Nov. 26, 2002
6486011 JFET structure and manufacture method for low on-resistance and low voltage application Nov. 26, 2002
6468890 Semiconductor device with ohmic contact-connection and method for the ohmic contact-connection of a semiconductor device Oct. 22, 2002
6344116 Monocrystalline three-dimensional integrated-circuit technology Feb. 5, 2002
6307223 Complementary junction field effect transistors Oct. 23, 2001
6294818 Parallel-stripe type semiconductor device Sep. 25, 2001
6287903 Structure and method for a large-permittivity dielectric using a germanium layer Sep. 11, 2001
6285046 Controllable semiconductor structure with improved switching properties Sep. 4, 2001
6271550 Junction field effect transistor or JFET with a well which has graded doping directly beneath the gate electrode Aug. 7, 2001
6251716 JFET structure and manufacture method for low on-resistance and low voltage application Jun. 26, 2001
6201269 Junction field effect transistor and method of producing the same Mar. 13, 2001
6097063 Semiconductor device having a plurality of parallel drift regions Aug. 1, 2000
6051856 Voltage-controlled resistor utilizing bootstrap gate FET Apr. 18, 2000
6020607 Semiconductor device having junction field effect transistors Feb. 1, 2000

1 2 3 4










 
 
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