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Class Information
Number: 257/E29.311
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Semiconductors devices adapted for rectifying, amplifying, oscillating, or switching, capacitors, or resistors with at least one potential-jump barrier or surface barrier (epo) > Types of semiconductor device (epo) > Controllable by only signal applied to control electrode (e.g., base of bipolar transistor, gate of field-effect transistor) (epo) > Unipolar device (epo) > Field-effect transistor (epo) > With field effect produced by pn or other rectifying junction gate (i.e., potential barrier) (epo) > With schottky drain or source contact (epo)
Description: This subclass is indented under subclass E29.31. This subclass is substantially the same in scope as ECLA classification H01L29/80C.










Patents under this class:

Patent Number Title Of Patent Date Issued
8658523 Method for making semiconductor insulated-gate field-effect transistor having multilayer deposited metal source(s) and/or drain(s) Feb. 25, 2014
8598636 Heat dissipation structure of SOI field effect transistor Dec. 3, 2013
8338866 Microwave semiconductor device using compound semiconductor and method for manufacturing the same Dec. 25, 2012
8154025 Schottky barrier CMOS device and method Apr. 10, 2012
8084793 Microwave semiconductor device using compound semiconductor and method for manufacturing the same Dec. 27, 2011
8039902 Semiconductor devices having Si and SiGe epitaxial layers Oct. 18, 2011
7884002 Method of fabricating self aligned Schottky junctions for semiconductor devices Feb. 8, 2011
7816240 Method for making semiconductor insulated-gate field-effect transistor having multilayer deposited metal source(s) and/or drain(s) Oct. 19, 2010
7791138 Semiconductor component and method Sep. 7, 2010
7763938 Field effect transistor Jul. 27, 2010
7453133 Silicide/semiconductor structure and method of fabrication Nov. 18, 2008
7405449 Semiconductor device and method of manufacturing the same Jul. 29, 2008
7405452 Semiconductor device containing dielectrically isolated PN junction for enhanced breakdown characteristics Jul. 29, 2008
6828632 Stable PD-SOI devices and methods Dec. 7, 2004
5321284 High frequency FET structure Jun. 14, 1994
4554569 Integrated electron circuits having Schottky field effect transistors of P- and N-type Nov. 19, 1985
4400710 Semiconductor device Aug. 23, 1983
4312113 Method of making field-effect transistors with micron and submicron gate lengths Jan. 26, 1982
4312112 Method of making field-effect transistors with micron and submicron gate lengths Jan. 26, 1982
4310570 Field-effect transistors with micron and submicron gate lengths Jan. 12, 1982











 
 
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