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Class Information
Number: 257/E29.308
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Semiconductors devices adapted for rectifying, amplifying, oscillating, or switching, capacitors, or resistors with at least one potential-jump barrier or surface barrier (epo) > Types of semiconductor device (epo) > Controllable by only signal applied to control electrode (e.g., base of bipolar transistor, gate of field-effect transistor) (epo) > Unipolar device (epo) > Field-effect transistor (epo) > With field effect produced by insulated gate (epo) > With floating gate (epo) > Programmable with more than two possible different levels (epo)
Description: This subclass is indented under subclass E29.3. This subclass is substantially the same in scope as ECLA classification H01L29/788C.










Patents under this class:
1 2 3 4

Patent Number Title Of Patent Date Issued
8624214 Semiconductor device having a resistance variable element and a manufacturing method thereof Jan. 7, 2014
8592792 Heterojunction device comprising a semiconductor oxide and a resistivity-switching oxide or nitride Nov. 26, 2013
8581223 Memory device and method of making same Nov. 12, 2013
8476708 Semiconductor memory device having a circuit formed on a single crystal semiconductor layer with varied germanium concentration Jul. 2, 2013
8227787 Heterojunction device comprising a semiconductor and a resistivity-switching oxide or nitride Jul. 24, 2012
8026544 Fabricating and operating a memory array having a multi-level cell region and a single-level cell region Sep. 27, 2011
8008702 Multi-transistor non-volatile memory element Aug. 30, 2011
7981742 Semiconductor device, data element thereof and method of fabricating the same Jul. 19, 2011
7834388 Memory array of non-volatile electrically alterable memory cells for storing multiple data Nov. 16, 2010
7816723 Semiconductor memory array of floating gate memory cells with program/erase and select gates Oct. 19, 2010
7550347 Methods of forming integrated circuit device gate structures Jun. 23, 2009
7541638 Symmetrical and self-aligned non-volatile memory structure Jun. 2, 2009
7449747 Semiconductor memory device Nov. 11, 2008
7315056 Semiconductor memory array of floating gate memory cells with program/erase and select gates Jan. 1, 2008
7253429 Electrically programmable memory element Aug. 7, 2007
7166886 DRAM cells with repressed floating gate memory, low tunnel barrier interpoly insulators Jan. 23, 2007
7072217 Multi-state memory cell with asymmetric charge trapping Jul. 4, 2006
7049653 Nonvolatile semiconductor memory device having element isolating region of trench type May. 23, 2006
7045851 Nonvolatile memory device using semiconductor nanocrystals and method of forming same May. 16, 2006
7037782 Semiconductor memory having storage cells storing multiple bits and a method of manufacturing the same May. 2, 2006
7026687 Non-volatile semiconductor memory and method of manufacturing the same Apr. 11, 2006
7015540 Semiconductor memory device Mar. 21, 2006
7009888 Low voltage, island-layer-based nonvolatile semiconductor storage device with floating biased memory cell channel Mar. 7, 2006
6998671 Localized split floating gate device using drain coupling to suppress the second bit effect Feb. 14, 2006
6995423 Memory device having a P+ gate and thin bottom oxide and method of erasing same Feb. 7, 2006
6991988 Static pass transistor logic with transistors with multiple vertical gates Jan. 31, 2006
6984863 Semiconductor decive and semiconductor memory using the same Jan. 10, 2006
6977412 Trench corner effect bidirectional flash memory cell Dec. 20, 2005
6951782 Nonvolatile memory cell with multiple floating gates formed after the select gate and having upward protrusions Oct. 4, 2005
6944062 Transistor and semiconductor memory using the same Sep. 13, 2005
6936884 Nonvolatile silicon/oxide/nitride/silicon/nitride/oxide/silicon memory Aug. 30, 2005
6937525 Semiconductor memory having storage cells storing multiple bits and a method of driving the same Aug. 30, 2005
6936883 Bi-directional read/program non-volatile floating gate memory cell and array thereof, and method of formation Aug. 30, 2005
6930348 Dual bit split gate flash memory Aug. 16, 2005
6927446 Nonvolatile semiconductor memory device and its manufacturing method Aug. 9, 2005
6927136 Non-volatile memory cell having metal nano-particles for trapping charges and fabrication thereof Aug. 9, 2005
6914820 Erasing storage nodes in a bi-directional nonvolatile memory cell Jul. 5, 2005
6912163 Memory device having high work function gate and method of erasing same Jun. 28, 2005
6903405 Semiconductor memory device with a pair of floating gates Jun. 7, 2005
6897533 Multi-bit silicon nitride charge-trapping non-volatile memory cell May. 24, 2005
6897517 Multibit non-volatile memory and method May. 24, 2005
6894344 Semiconductor integrated circuit having two switch transistors formed between two diffusion-layer lines May. 17, 2005
6885590 Memory device having A P+ gate and thin bottom oxide and method of erasing same Apr. 26, 2005
6885044 Arrays of nonvolatile memory cells wherein each cell has two conductive floating gates Apr. 26, 2005
6884679 Flash memory cell and method of manufacturing the same and programming/erasing/reading method of flash memory cell Apr. 26, 2005
6867463 Silicon nitride read-only-memory Mar. 15, 2005
6858501 Self-aligned dual-floating gate memory cell and method for manufacturing the same Feb. 22, 2005
6855979 Multi-bit non-volatile memory device and method therefor Feb. 15, 2005
6849895 Semiconductor non-volatile memory Feb. 1, 2005
6831325 Multi-level memory cell with lateral floating spacers Dec. 14, 2004

1 2 3 4










 
 
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