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Class Information
Number: 257/E29.307
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Semiconductors devices adapted for rectifying, amplifying, oscillating, or switching, capacitors, or resistors with at least one potential-jump barrier or surface barrier (epo) > Types of semiconductor device (epo) > Controllable by only signal applied to control electrode (e.g., base of bipolar transistor, gate of field-effect transistor) (epo) > Unipolar device (epo) > Field-effect transistor (epo) > With field effect produced by insulated gate (epo) > With floating gate (epo) > Hi-lo programming levels only (epo) > Charging by hot carrier injection (epo) > Hot carrier produced by avalanche breakdown of pn junction (e.g., famos) (epo)
Description: This subclass is indented under subclass E29.305. This subclass is substantially the same in scope as ECLA classification H01L29/788B6C.

Patents under this class:
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Patent Number Title Of Patent Date Issued
7964907 Integrated circuit device gate structures Jun. 21, 2011
7880221 Forming metal-semiconductor films having different thicknesses within different regions of an electronic device Feb. 1, 2011
7682908 Non-volatile memory and operating method thereof Mar. 23, 2010
6878588 Method for fabricating a flash memory cell Apr. 12, 2005
6713811 Split gate flash with strong source side injection and method of fabrication thereof Mar. 30, 2004
6696340 Semiconductor devices having a non-volatile memory transistor and methods for manufacturing the same Feb. 24, 2004
6653682 Non-volatile electrically alterable semiconductor memory device Nov. 25, 2003
6639270 Non-volatile memory cell Oct. 28, 2003
6555870 Nonvolatile semiconductor memory device and method for producing same Apr. 29, 2003
6288938 Flash memory architecture and method of operation Sep. 11, 2001
6282123 Method of fabricating, programming, and erasing a dual pocket two sided program/erase non-volatile memory cell Aug. 28, 2001
6252270 Increased cycle specification for floating-gate and method of manufacture thereof Jun. 26, 2001
6243298 Non-volatile memory cell capable of being programmed and erased through substantially separate areas of one of its drain-side and source-side regions Jun. 5, 2001
6214666 Method of forming a non-volatile memory device Apr. 10, 2001
6171908 Method of fabricating self-aligned split gate flash memory cell Jan. 9, 2001
6157568 Avalanche programmed floating gate memory cell structure with program element in first polysilicon layer Dec. 5, 2000
6064595 Floating gate memory apparatus and method for selected programming thereof May. 16, 2000
6034896 Method of fabricating a fast programmable flash E.sup.2 PROM cell Mar. 7, 2000
5998830 Flash memory cell Dec. 7, 1999
5978272 Nonvolatile memory structure for programmable logic devices Nov. 2, 1999
5793080 Nonvolatile memory device Aug. 11, 1998
5656839 Semiconductor integrated circuit device having single-element type nonvolatile memory elements Aug. 12, 1997
5646430 Non-volatile memory cell having lightly-doped source region Jul. 8, 1997
5640346 Electrically programmable memory cell Jun. 17, 1997
5604142 Method of making an EPROM with peripheral transistor Feb. 18, 1997
5482880 Non-volatile memory cell and fabrication method Jan. 9, 1996
5472891 Method of manufacturing a semiconductor device Dec. 5, 1995
5459091 Method for fabricating a non-volatile memory device Oct. 17, 1995
5455793 Electrically reprogrammable EPROM cell with merged transistor and optimum area Oct. 3, 1995
5401991 Optically eraseable nonvolatile semiconductor memory Mar. 28, 1995
5360756 Method of manufacturing a semiconductor device having a monocrystal silicon layer Nov. 1, 1994
5340760 Method of manufacturing EEPROM memory device Aug. 23, 1994
5296397 Method for manufacturing an EPROM cell Mar. 22, 1994
5293328 Electrically reprogrammable EPROM cell with merged transistor and optiumum area Mar. 8, 1994
5264384 Method of making a non-volatile memory cell Nov. 23, 1993
5260593 Semiconductor floating gate device having improved channel-floating gate interaction Nov. 9, 1993
5231041 Manufacturing method of an electrically programmable non-volatile memory device having the floating gate extending over the control gate Jul. 27, 1993
5223731 EPROM cell using trench isolation to provide leak current immunity Jun. 29, 1993
5189497 Semiconductor memory device Feb. 23, 1993
5120571 Floating-gate memory array with silicided buried bitlines and with single-step-defined floating gates Jun. 9, 1992
5101250 Electrically programmable non-volatile memory device and manufacturing method thereof Mar. 31, 1992
5101249 Nonvolatile semiconductor memory device Mar. 31, 1992
5091326 EPROM element employing self-aligning process Feb. 25, 1992
5089433 Bipolar field-effect electrically erasable programmable read only memory cell and method of manufacture Feb. 18, 1992
5079603 Semiconductor memory device Jan. 7, 1992
5053841 Nonvolatile semiconductor memory Oct. 1, 1991
5023680 Floating-gate memory array with silicided buried bitlines and with single-step-defined floating gates Jun. 11, 1991
5021999 Non-volatile semiconductor memory device with facility of storing tri-level data Jun. 4, 1991
4980309 Method of making high density EEPROM Dec. 25, 1990
4964143 EPROM element employing self-aligning process Oct. 16, 1990

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