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Class Information
Number: 257/E29.306
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Semiconductors devices adapted for rectifying, amplifying, oscillating, or switching, capacitors, or resistors with at least one potential-jump barrier or surface barrier (epo) > Types of semiconductor device (epo) > Controllable by only signal applied to control electrode (e.g., base of bipolar transistor, gate of field-effect transistor) (epo) > Unipolar device (epo) > Field-effect transistor (epo) > With field effect produced by insulated gate (epo) > With floating gate (epo) > Hi-lo programming levels only (epo) > Charging by hot carrier injection (epo) > Hot carrier injection from channel (epo)
Description: This subclass is indented under subclass E29.305. This subclass is substantially the same in scope as ECLA classification H01L29/788B6B.

Patents under this class:
1 2 3 4 5 6 7 8 9 10 11 12

Patent Number Title Of Patent Date Issued
5323039 Non-volatile semiconductor memory and method of manufacturing the same Jun. 21, 1994
5315546 Non-volatile semiconductor memory using a thin film transistor May. 24, 1994
5313086 Semiconductor device May. 17, 1994
5313421 EEPROM with split gate source side injection May. 17, 1994
5303184 Non-volatile semiconductor memory having commonly used source or drain regions of floating gate type transistors Apr. 12, 1994
5303187 Non-volatile semiconductor memory cell Apr. 12, 1994
5300802 Semiconductor integrated circuit device having single-element type non-volatile memory elements Apr. 5, 1994
5300803 Source side injection non-volatile memory cell Apr. 5, 1994
5293560 Multi-state flash EEPROM system using incremental programing and erasing methods Mar. 8, 1994
5291047 Floating gate type electrically programmable read only memory cell with variable threshold level in erased state Mar. 1, 1994
5284784 Buried bit-line source-side injection flash memory cell Feb. 8, 1994
5281548 Plug-based floating gate memory Jan. 25, 1994
5278787 Semiconductor device and method of manufacturing the same Jan. 11, 1994
5278087 Method of making a single transistor non-volatile electrically alterable semiconductor memory device with a re-crystallized floating gate Jan. 11, 1994
5274588 Split-gate cell for an EEPROM Dec. 28, 1993
5268318 Highly compact EPROM and flash EEPROM devices Dec. 7, 1993
5268319 Highly compact EPROM and flash EEPROM devices Dec. 7, 1993
5268585 Non-volatile memory and method of manufacturing the same Dec. 7, 1993
5268870 Flash EEPROM system and intelligent programming and erasing methods therefor Dec. 7, 1993
5262987 Floating gate semiconductor nonvolatile memory having impurity doped regions for low voltage operation Nov. 16, 1993
5258949 Nonvolatile memory with enhanced carrier generation and method for programming the same Nov. 2, 1993
5252846 Semiconductor memory device with an improved erroneous write characteristic and erasure characteristic Oct. 12, 1993
5242848 Self-aligned method of making a split gate single transistor non-volatile electrically alterable semiconductor memory device Sep. 7, 1993
5241499 Non-volatile split gate EPROM memory cell and self-aligned field insulation process for obtaining the above cell Aug. 31, 1993
5241202 Cell structure for a programmable read only memory device Aug. 31, 1993
5235541 Integrated circuit entirely protected against ultraviolet rays Aug. 10, 1993
5231299 Structure and fabrication method for EEPROM memory cell with selective channel implants Jul. 27, 1993
5229632 Electrically erasable memory device having erase-electrode connected to substrate junction Jul. 20, 1993
5215934 Process for reducing program disturbance in EEPROM arrays Jun. 1, 1993
5216270 Non-volatile memory cell with tunnel window structure and method Jun. 1, 1993
5212541 Contactless, 5V, high speed EPROM/flash EPROM array utilizing cells programmed using source side injection May. 18, 1993
5202576 Asymmetrical non-volatile memory cell, arrays and methods for fabricating same Apr. 13, 1993
5202850 Single transistor non-volatile electrically alterable semiconductor memory device with a re-crystallized floating gate Apr. 13, 1993
5198380 Method of highly compact EPROM and flash EEPROM devices Mar. 30, 1993
5196361 Method of making source junction breakdown for devices with source-side erasing Mar. 23, 1993
5196914 Table cloth matrix of EPROM memory cells with an asymmetrical fin Mar. 23, 1993
5194929 Nonvolatile semiconductor memory and a memory of manufacturing the same Mar. 16, 1993
5192872 Cell structure for erasable programmable read-only memories Mar. 9, 1993
5190887 Method of making electrically erasable and electrically programmable memory cell with extended cycling endurance Mar. 2, 1993
5189497 Semiconductor memory device Feb. 23, 1993
5168465 Highly compact EPROM and flash EEPROM devices Dec. 1, 1992
5159431 Nonvolatile semiconductor device with a trench isolator Oct. 27, 1992
5159570 Four memory state EEPROM Oct. 27, 1992
5156990 Floating-gate memory cell with tailored doping profile Oct. 20, 1992
5149666 Method of manufacturing a semiconductor memory device having a floating gate electrode composed of 2-10 silicon grains Sep. 22, 1992
5146426 Electrically erasable and programmable read only memory with trench structure Sep. 8, 1992
5143860 High density EPROM fabricaiton method having sidewall floating gates Sep. 1, 1992
5130769 Nonvolatile memory cell Jul. 14, 1992
5126808 Flash EEPROM array with paged erase architecture Jun. 30, 1992
5111270 Three-dimensional contactless non-volatile memory cell May. 5, 1992

1 2 3 4 5 6 7 8 9 10 11 12

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